Datasheet MASWSS0020TR, MASWSS0020SMB, MASWSS0020 Datasheet (M A COM)

GaAs SP4T 2.5V High Power Switch

Jan 16 2002

DC - 3 GHz

Preliminary

MASWSS0020

Features

• Low Voltage Operation 2.5V

• Low Harmonics > 65 dBc at +34 dBm & 1 GHz

• Low Insertion Loss 0.6 dB at 1 GHz

• High Isolation 23 dB at 2 GHz

• Miniature FQFP 16-lead 4x4mm Package

• 0.5 micron GaAs pHEMT Process

Description

M/A-COM’s MASWSS0020 is a GaAs PHEMT MMIC
single pole four throw (SP4T) high power switch in a low
cost miniature FQFP 16-lead 4x4mm package. The
MASWSS0020 is ideally suited for applications where high
power, low control voltage, low insertion loss, high isola­tion, small size and low cost are required. Typical applica­tions are for GSM and DCS handset systems that connect
separate transmit and receive functions to a common an­tenna, as well as other handset and related applications.
This part can be used in all systems operating up to 3 GHz
requiring high power at low control voltage.

The MASWSS0020 is fabricated using a 0.5 micron gate
length GaAs PHEMT process. The process features full
passivation for performance and reliability.

Absolute Maximum Ratings 1

Parameter Absolute

Max Input Power (0.5 - 3 GHz,

2.5V Control)

Operating Voltage +8.5 volts

Operating Temperature -40 oC to +85 oC

Storage Temperature -65 oC to +150 oC

1. Exceeding any one or combination of these limits may
cause permanent damage.

Maximum

+38 dBm

Functional Schematic

GND

V2

V4

V3

GND

GND

PIN 16

PIN 1

V1

RF1

39 pF

GND

RF2 RF3

39 pF

ANT

GND

39 pF

Pin Configuration

PIN
No.

1 V1 Control 1

2 RF1 RF Port 1

3 GND RF Ground

4 RF2 RF Port 2

5 GND RF Ground

6 V2 Control 2

7 V3 Control 3

8 GND RF Ground

9 RF3 RF Port 3

10 GND RF Ground

11 GND RF Ground

12 RF4 RF Port 4

13 GND RF Ground

14 V4 Control 4

15 GND RF Ground

16 ANT Antenna Port

17 GND (paddle) RF Ground

PIN Name Description

RF4

39 pF

GND

GND

39 pF

GaAs SP4T 2.5V High Power Switch

Electrical Specifications: TA = 25°C, Z0 = 50Ω 2

Parameter Test Conditions Units Min. Typ. Max.

MASWSS0020

V 1.00

Insertion Loss DC – 1 GHz

Isolation DC – 1 GHz

Return Loss DC – 3 GHz dB 20

IP3 Two Tone +10dBm, 5 MHz Spacing, > 50 MHz

P1dB Vc = 0V/2.5V dBm 38

2nd Harmonic 1 GHz, PIN = +34 dBm, Vc = 0V/2.5V dBc 65

3rd Harmonic 1 GHz, PIN = +34 dBm, Vc = 0V/2.5V dBc 65

Trise, Tfall 50% control to 90% RF, and 50% control to 10% RF

Ton, Toff 50 - 350 MHz uS 1

Transients

Gate Leakage |Vc| = 2.5V uA 100

2. Insertion Loss can be optimized by varying the DC Blocking Capacitor value, ie. 1000 pF for 100 MHz - 500 MHz, 39 pF for

0.5 GHz - 3 GHz.

1 – 2 GHz

2 - 3 GHz

1 – 2 GHz

2 - 3 GHz

Vc = 0V/2.5V

mV 10

dB
dB
dB

dB
dB
dB

dBm 57

uS

0.6

25
21

1

0.8

1.0

29
23

18.5

0.8

1.0

Truth Table 3

V1 V2

+2.5 to +5V 0 + 0.2V 0 + 0.2V 0 + 0.2V On Off Off Off

0 + 0.2V +2.5 to +5V 0 + 0.2V 0 + 0.2V Off On Off Off

0 + 0.2V 0 + 0.2V +2.5 to +5V 0 + 0.2V Off Off On Off

0 + 0.2V 0 + 0.2V 0 + 0.2V +2.5 to +5V Off Off Off On

3. External DC blocking capacitors are required on all RF ports

Specifications subject to change without notice.



North America: Tel. [phone], Fax [phone]

 Asia/Pacific: Tel.[phone], Fax [phone]


Europe: Tel. [phone], Fax[phone]

Visit www.macom.com for additional data sheets and product information.

V3 V4 ANT– RF1 ANT - RF2 ANT - RF3 ANT - RF4

2

GaAs SP4T 2.5V High Power Switch

Typical Performance Curves

MASWSS0020

V 1.00

Insertion Loss vs. Frequency,

o

25

C, 39 pF

-0.5

-0.6

-0.7

-0.8

-0.9

-1

0.5 1 1.5 2 2.5 3

Frequency (GHz)

Harmonic Rejection vs. Control Voltage,

o

25

C, 39 pF

-60

-65

Pin = +34 dBm @ 1 GHz

Isolation vs. Frequency,

o

25

C, 39 pF

-15

-20

-25

-30

-35

0.511.522.53
Frequency (GHz)

-70

-75

-80

-85

2.22.42.62.8 3

Control Voltage (V)

3rd Harmonic

2nd Harmonic

Specifications subject to change without notice.



North America: Tel. [phone], Fax [phone]

 Asia/Pacific: Tel.[phone], Fax [phone]


Europe: Tel. [phone], Fax[phone]

Visit www.macom.com for additional data sheets and product information.

3

GaAs SP4T 2.5V High Power Switch

FQFP 16-lead 4x4 mm

MASWSS0020

V 1.00

Specifications subject to change without notice.



North America: Tel. [phone], Fax [phone]

 Asia/Pacific: Tel.[phone], Fax [phone]


Europe: Tel. [phone], Fax[phone]

Visit www.macom.com for additional data sheets and product information.

4

GaAs SP4T 2.5V High Power Switch

Handling Procedures

The following precautions should be observed to avoid
damage:

Static Sensitivity

Gallium Arsenide Integrated Circuits are ESD sensitive
and can be damaged by static electricity. Proper ESD
techniques should be used when handling these devices.

Ordering Information

Part Number Package

MASWSS0020 FQFP-N 16-lead Plastic Package

MASWSS0020TR 1000 piece reel

MASWSS0020SMB Sample Test Board

MASWSS0020

V 1.00

Specifications subject to change without notice.



North America: Tel. [phone], Fax [phone]

 Asia/Pacific: Tel.[phone], Fax [phone]


Europe: Tel. [phone], Fax[phone]

Visit www.macom.com for additional data sheets and product information.

5