Datasheet MASWSS0006SMB, MASWSS0006 Datasheet (M A COM)

GaAs SP2T 2.5V High Power Switch

Jan 17 2002

DC - 3 GHz

Preliminary

MASWSS0006

Features

• Low Voltage Operation 2.5V

• Low Harmonics > 65 dBc at +34 dBm & 1 GHz

• Low Insertion Loss 0.45 dB at 1 GHz

• High Isolation 18.5 dB at 2 GHz

• Miniature SOT-26 Package

• 0.5 micron GaAs pHEMT Process

Description

M/A-COM’s MASWSS0006 is a GaAs PHEMT MMIC
single pole two throw (SP2T) high power switch in a low
cost miniature SOT-26 package. The MASWSS0006 is
ideally suited for applications where high power, low con­trol voltage, low insertion loss, high isolation, small size
and low cost are required. Typical applications are for
GSM and DCS handset systems that connect separate
transmit and receive functions to a common antenna, as
well as other related handset and general purpose appli­cations. This part can be used in all systems operating
up to 3 GHz requiring high power at low control voltage.

The MASWSS0006 is fabricated using a 0.5 micron gate
length GaAs PHEMT process. The process features full
passivation for performance and reliability.

Absolute Maximum Ratings 1

Parameter Absolute

Max Input Power (0.5 - 3 GHz,

2.5V Control)

Operating Voltage +8.5 volts

Operating Temperature -40 oC to +85 oC

Storage Temperature -65 oC to +150 oC

Maximum

+38 dBm

Functional Schematic

PIN 1

RF1

39 pF

GND

RF2

39 pF

PIN 6

V1

RFC

V2

Pin Configuration

PIN
No.

1 RF1 RF Port 1

2 GND RF Ground

3 RF2 RF Port 2

4 V1 Control 1

5 RFC RF Common Port

6 V2 Control 2

PIN Name Description

39 pF

1. Exceeding any one or combination of these limits may
cause permanent damage.

GaAs SP2T 2.5V High Power Switch

Electrical Specifications: TA = 25°C, Z0 = 50Ω 2

Parameter Test Conditions Units Min. Typ. Max.

MASWSS0006

V 1.00

Insertion Loss DC – 1 GHz

1 – 2 GHz

2 - 3 GHz

Isolation DC – 1 GHz

1 – 2 GHz

2 - 3 GHz

Return Loss DC – 2 GHz

2 - 3 GHz

IP3 Two Tone +21 dBm, 1 MHz Spacing, > 50 MHz

Vc = 0V/3V

P1dB Vc = 0V/2.5V dBm 38

2nd Harmonic 1 GHz, PIN = +34 dBm, Vc = 0V/2.5V dBc 65

3rd Harmonic 1 GHz, PIN = +34 dBm, Vc = 0V/2.5V dBc 65

Trise, Tfall 10% to 90% RF, 90% to 10% RF uS 1

Ton, Toff 50% control to 90% RF, and 50% control to 10% RF uS 1

Transients In Band mV 10

Gate Leakage |Vc| = 2.5V uA 100

2. Insertion Loss can be optimized by varying the DC Blocking Capacitor value, ie. 1000 pF for 100 MHz - 500 MHz, 39 pF for

0.5 GHz - 3 GHz.

dB
dB
dB

dB
dB
dB

dB
dB

dBm 64

0.45

23

17.5

20

0.55

0.65

24.5

18.5
14

16

0.65

0.75

Truth Table 3

V1 V2

+2.5 to +5V 0 + 0.2V On Off

0 + 0.2V +2.5 to +5V Off On

3. External DC blocking capacitors are required on all RF ports

Specifications subject to change without notice.



North America: Tel. [phone], Fax [phone]

 Asia/Pacific: Tel.[phone], Fax [phone]


Europe: Tel. [phone], Fax[phone]

Visit www.macom.com for additional data sheets and product information.

ANT– RF1 ANT - RF2

2

GaAs SP2T 2.5V High Power Switch

Typical Performance Curves

MASWSS0006

V 1.00

Insertion Loss vs. Frequency,

o

25

C, 39 pF

0

-0.1

-0.2

-0.3

-0.4

-0.5

-0.6

-0.7

-0.8

-0.9

-1

0.5 1 1.5 2 2.5 3

Frequency (GHz)

Harmonic Rejection vs. Control Voltage,

o

25

C, 39 pF

-60

Pin = +34 dBm @ 1 GHz

-65

-70

-75

3rd Harmonic

Isolation vs. Frequency,
25 oC, 39 pF

0

-5

-10

-15

-20

-25

-30

-35

0.511.522.5 3

Frequency (GHz)

-80

-85

-90

2.2 2.4 2.6 2.8 3

2nd Harmonic

Frequency (GHz)

Specifications subject to change without notice.



North America: Tel. [phone], Fax [phone]

 Asia/Pacific: Tel.[phone], Fax [phone]


Europe: Tel. [phone], Fax[phone]

Visit www.macom.com for additional data sheets and product information.

3

GaAs SP2T 2.5V High Power Switch

SOT-26 Plastic Package

MASWSS0006

V 1.00

Specifications subject to change without notice.



North America: Tel. [phone], Fax [phone]

 Asia/Pacific: Tel.[phone], Fax [phone]


Europe: Tel. [phone], Fax[phone]

Visit www.macom.com for additional data sheets and product information.

4

GaAs SP2T 2.5V High Power Switch

Handling Procedures

The following precautions should be observed to avoid
damage:

Static Sensitivity

Gallium Arsenide Integrated Circuits are ESD sensitive
and can be damaged by static electricity. Proper ESD
techniques should be used when handling these devices.

Ordering Information

Part Number Package

MASWSS0006 SOT-26 6-lead Plastic Package

MASWSS0006TR 1000 piece reel

MASWSS0006SMB Sample Test Board

MASWSS0006

V 1.00

Specifications subject to change without notice.



North America: Tel. [phone], Fax [phone]

 Asia/Pacific: Tel.[phone], Fax [phone]


Europe: Tel. [phone], Fax[phone]

Visit www.macom.com for additional data sheets and product information.

5