Page 1
1
Motorola Thyristor Device Data
Triacs
Silicon Bidirectional Thyristors
. . . designed for full-wave ac control applications primarily in industrial environments
needing noise immunity.
• Guaranteed High Commutation Voltage
dv/dt — 500 V/µs Min @ TC = 25°C
• High Blocking Voltage — V
DRM
to 800 V
• Photo Glass Passivated Junction for Improved Power Cycling Capability and
Reliability
MAXIMUM RATINGS
(TC = 25°C unless otherwise noted.)
Rating
Symbol Value Unit
Peak Repetitive Off-State Voltage
(1)
(TJ = –40 to +125°C,
1/2 Sine Wave 50 to 60 Hz, Open Gate)
MAC321-4
MAC321-6
MAC321-8
MAC321-10
V
DRM
200
400
600
800
Volts
Peak Gate Voltage V
GM
10 Volts
On-State Current RMS (TC = +75°C
Full Cycle Sine Wave 50 to 60 Hz)
I
T(RMS)
20 Amp
Peak Surge Current (One Full Cycle, 60 Hz, TC = +75°C
preceded and followed by Rated Current)
I
TSM
150 Amp
Circuit Fusing Considerations (t = 8.3 ms) I2t 93 A2s
Peak Gate Power (TC = +75°C, Pulse Width = 2.0 µs) P
GM
20 Watts
Average Gate Power (TC = +75°C, t = 8.3 ms) P
G(AV)
0.5 Watt
Peak Gate Current I
GM
2.0 Amp
Operating Junction Temperature Range T
J
–40 to +125 °C
Storage Temperature Range T
stg
–40 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
θJC
1.8 °C/W
1. V
DRM
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Order this document
by MAC321/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1995
MAC321
Series
CASE 221A-04
(TO-220AB)
STYLE 4
TRIACs
20 AMPERES RMS
200 thru 800 VOLTS
MT1
G
MT2
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2 Motorola Thyristor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
Peak Blocking Current
(VD = Rated V
DRM
, Gate Open)
TJ = 25°C
TJ = +125°C
I
DRM
—
—
—
—
10
2.0
µA
mA
Peak On-State Voltage (Either Direction)
(ITM = 28 A Peak; Pulse Width p 2.0 ms, Duty Cycle p 2.0%)
V
TM
— 1.4 1.7 Volts
Gate Trigger Current (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
I
GT
—
—
—
—
—
—
100
100
100
mA
Gate Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
(Main Terminal Voltage = Rated V
DRM
, RL = 10 kΩ, TJ = +125°C)
MT2(+), G(+); MT2(–), G(–); MT2(+), G(–)
V
GT
—
—
—
0.2
—
—
—
—
2.0
2.0
2.0
—
Volts
Holding Current (Either Direction)
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = 200 mA)
I
H
— — 100 mA
Turn-On Time
(VD = Rated V
DRM
, ITM = 28 A, IGT = 120 mA,
Rise Time = 0.1 µs, Pulse Width = 2.0 µs)
t
gt
— 1.5 — µs
Critical Rate of Rise of Off-State Voltage
(VD = Rated V
DRM
, Exponential Voltage Rise, Gate Open)
TJ = 25°C
TJ = +125°C
dv/dt(s)
500
200
—
—
—
—
V/µs
110
120
130
2 4 6 8 10 12
60
70
80
90
100
14 16
dc
0
Figure 1. RMS Current Derating
5
40
35
30
25
20
15
10
2018
Figure 2. On-State Power Dissipation
I
T(RMS)
, RMS ON-STATE CURRENT (AMP)
50
0
2 4 6 8 10 12 14 160 2018
I
T(RMS)
, RMS ON-STATE CURRENT (AMP)
α
= 30
°
60
°
90
°
180
°
α
= CONDUCTION
ANGLE
α
α
α
= CONDUCTION
ANGLE
α
α
P
D(AV)
, AVERAGE POWER (WATT)
T
C
, MAXIMUM ALLOWABLE CASE TEMPERATURE ( C)
°
180
°
dc
90
°
60
°
α
= 30
°
TYPICAL CHARACTERISTICS
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3
Motorola Thyristor Device Data
Figure 5. Maximum On-State Characteristics
Figure 4. Typical Gate Trigger Current
Figure 3. Typical Gate Trigger Voltage
1
30
2
3
5
7
10
20
50
70
100
0.1
0.7
0.5
0.3
4
0.2
0.4 0.8 1.2 1.6 2 2.4 2.8 3.63.2 4.4
vTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
i , INSTANTANEOUS FORWARD CURRENT (AMP)
TM
TJ = 25°C
V , GATE TRIGGER VOLTAGE (NORMALIZED)
GTM
–60 120–40 0–20 20 40 60 80 100 140
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
0.7
0.5
0.3
3
2
1
TJ, JUNCTION TEMPERATURE (
°
C)
–60 120–40 0–20 20 40 60 80 100 140
TJ, JUNCTION TEMPERATURE(
°
C)
0.7
0.5
0.3
3
2
1
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
I , GATE TRIGGER CURRENT (NORMALIZED)
GTM
125°C
Figure 6. Typical Holding Current
Figure 7. Maximum On-Repetitive Surge Current
–60 120–40 0–20 20 40 60 80 100 140
TJ, JUNCTION TEMPERATURE (
°
C)
0.7
0.5
0.3
2
1
GATE OPEN
APPLIES TO EITHER DIRECTION
I , HOLDING CURRENT (NORMALIZED)
H
NUMBER OF CYCLES
103 72 51
TC= 80°C
f = 60 Hz
SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT
300
200
100
70
50
30
T , PEAK SURGE CURRENT (AMP)
SM
3
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4 Motorola Thyristor Device Data
Figure 8. Thermal Response
0.1 5 k2 k1 k500200100502010 10 k
t, TIME (ms)
1
0.2
0.5
5
0.02
0.1
0.01
210.50.2
0.05
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
Z
θ
JC(t)
= r(t)
•
R
θ
JC
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Motorola Thyristor Device Data
PACKAGE DIMENSIONS
CASE 221A-04
(TO–220AB)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
STYLE 4:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
4. MAIN TERMINAL 2
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93
J 0.014 0.022 0.36 0.55
K 0.500 0.562 12.70 14.27
L 0.045 0.055 1.15 1.39
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 ––– 1.15 –––
Z ––– 0.080 ––– 2.04
A
K
L
V
G
D
N
Z
H
Q
FB
1 2 3
4
–T–
SEATING
PLANE
S
R
J
U
T
C
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6 Motorola Thyristor Device Data
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “T ypicals” must be validated for each customer application by customer’s technical experts. Motorola does
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MAC321/D
*MAC321/D*
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