Datasheet MAC23A Datasheet (MOTOROLA)

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SEMICONDUCTOR TECHNICAL DATA

Triacs

Silicon Bidirectional Thyristors

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by MAC223A/D

MAC223A

Series

Motorola preferred devices

. . . designed primarily for full-wave ac control applications such as lighting systems,
heater controls, motor controls and power supplies; or wherever full–wave silicon–
gate–controlled devices are needed.

• Off–State Voltages to 800 Volts

TRIACs

25 AMPERES RMS

400 thru 800 VOL TS

• All Diffused and Glass Passivated Junctions for Parameter Uniformity and Stability

• Small, Rugged, Thermowatt Construction for Thermal Resistance and High Heat

Dissipation

• Gate Triggering Guaranteed in Four Modes

MT2

CASE 221A-07

(TO-220AB)

STYLE 4

MAXIMUM RATINGS

Peak Repetitive Off-State Voltage

(TJ = –40 to 125°C)
(1/2 Sine Wave 50 to 60 Hz, Gate Open)

On-State RMS Current (TC = 80°C)

(Full Cycle Sine Wave 50 to 60 Hz)

Peak Non-repetitive Surge Current

(One Full Cycle, 60 Hz, TC = 80°C, preceded and followed by rated current)

Circuit Fusing

(t = 8.3 ms)
Peak Gate Current (t v 2 µs) I
Peak Gate Voltage (t v 2 µs) V
Peak Gate Power (t v 2 µs) P
Average Gate Power (TC = 80°C, t v 8.3 ms) P
Operating Junction Temperature Range T
Storage Temperature Range T
Mounting Torque — 8 in. lb.

1. V

for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the

DRM

voltage ratings of the devices are exceeded.

(TJ = 25°C unless otherwise noted.)

Rating

(1)

MAC223A6
MAC223A8
MAC223A10

Symbol Value Unit

V

DRM

400
600
800

I

T(RMS)

I

TSM

I2t 260 A2s

GM

GM
GM

G(AV)

J

stg

25 Amps

250 Amps

2 Amps

"

10 Volts

20 Watts

0.5 Watts
–40 to 125 °C
–40 to 150 °C

G

Volts

MT1

Motorola Thyristor Device Data

 Motorola, Inc. 1998

1

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(

)

)

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Ambient R

ELECTRICAL CHARACTERISTICS (T

Characteristic

Peak Blocking Current

(VD = Rated V

Peak On-State Voltage

(ITM = 35 A Peak, Pulse Width v2 ms, Duty Cycle v2%)

Gate Trigger Current (Continuous dc)

(VD = 12 V, RL = 100 Ω)
MT2(+), G(+); MT2(–), G(–); MT(+), G(–)
MT2(–), G(+) “A” SUFFIX ONLY

Gate Trigger Voltage (Continuous dc)

(VD = 12 V, RL = 100 Ω)
MT2(+), G(+); MT2(–), G(–); MT(+), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
(VD = Rated V
MT(+), G(+); MT2(–), G(–); MT2(+), G(–)
MT2(–), G(+) “A” SUFFIX ONLY

Holding Current

(VD = 12 V, ITM = 200 mA, Gate Open)

Gate Controlled Turn–On Time

(VD = Rated V

Critical Rate of Rise of Off-State V oltage

(VD = Rated V

Critical Rate of Rise of Commutation Voltage

(VD = Rated V
di/dt = 12.6 A/ms, Gate Unenergized, TC = 80°C)

1. Ratings apply for open gate conditions. Devices shall not be tested with a constant current source for blocking voltage such that the voltage
applied exceeds the rated blocking voltage.

(1)

)T

DRM

, TJ = 125°C, RL = 10 k)

DRM

, ITM = 35 A Peak, IG = 200 mA)

DRM

, Exponential Waveform, TC = 125°C)

DRM

, ITM = 35 A Peak, Commutating

DRM

J

TJ = 125°C

= 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted.)

C

= 25°C

θJC
θJA

Symbol Min Typ Max Unit

I

DRM

V

TM

I

GT

V

GT

0.2

0.2

I

H

t

gt

dv/dt — 40 — V/µs

dv/dt(c) — 5 — V/µs

1.2 °C/W
60 °C/W

—
—

— 1.4 1.85 Volts

—
—

—
—

— 10 50 mA

— 1.5 — µs

—
—

20
30

1.1

1.3

0.4

0.4

10

50
75

2.5
—

—

2

2

µA

mA

mA

Volts

°

125

115

105

C

T , MAXIMUM ALLOWABLE CASE TEMPERATURE ( C)

FIGURE 1 – RMS CURRENT DERATING

95

85

75

0 5.0 10 15 20 25

, RMS ON–STATE CURRENT (AMPS)

I

RMS

T

FIGURE 2 – ON-STATE POWER DISSIPATION

40

30

20

10

, AVERAGE POWER DISSIP ATION (WATTS)

D

P

0

0 5.0 10 15 20 25

I

, RMS ON–STATE CURRENT (AMPS)

T(RMS

2 Motorola Thyristor Device Data

 

FIGURE 3 – GATE TRIGGER CURRENT

3.0

2.0

1.0

0.5

0.3

NORMALIZED GATE CURRENT

0.2

0.1
–60 –40 –20 0 20 40 60 80

TJ, JUNCTION TEMPERATURE (

VD = 12 V
RL = 100

Ω

100 120 140 – 60 –40 –20 0 20 40 60 80 100 120 140

°

C)

FIGURE 5 – HOLD CURRENT

2.0

1.0

0.5

0.3

NORMALIZED HOLD CURRENT

0.2

0.1
–60 –40 –20 0 20 40 60 80 100 120 140

TJ, JUNCTION TEMPERATURE (°C)

ITM = 200 mA
Gate Open

FIGURE 4 – GATE TRIGGER VOLTAGE

3.0

2.0

1.0

0.5

0.3

NORMALIZED GATE VOLT AGE

0.2

0.1
TJ, JUNCTION TEMPERATURE (°C)

VD = 12 V
RL = 100

Ω

FIGURE 6 – TYPICAL ON–STATE CHARACTERISTICS

200
100

50

10

5.0

1.0

0.5

, INSTANTANEOUS ON–STA TE CURRENT (AMPS)

0.1

TM

i

0

1.0 2.0 3.0 4.0

VTM, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS)

TJ = 25°C

Motorola Thyristor Device Data

3

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P ACKAGE DIMENSIONS

SEATING

–T–

PLANE

FB

Q

4

A

123

T

U

H

K

C

S

STYLE 3:

PIN 1. CATHODE

2. ANODE

3. GATE

4. ANODE

Z

L

V

R

J

G

D

N

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.

DIM MIN MAX MIN MAX

A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93
J 0.014 0.022 0.36 0.55
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 ––– 1.15 –––
Z ––– 0.080 ––– 2.04

MILLIMETERSINCHES

CASE 221A-07

(TO-220AB)

ISSUE Z

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
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4 Motorola Thyristor Device Data

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