Datasheet MAC229A8FP Datasheet (MOTOROLA)

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SEMICONDUCTOR TECHNICAL DATA

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Triacs

MAC229A8FP

Silicon Bidirectional Triode Thyristors

. . . designed primarily for industrial and consumer applications for full wave control of
ac loads such as appliance controls, heater controls, motor controls, and other power
switching applications.

• All Diffused and Glass–Passivated Junctions for Parameter Uniformity and Stability

• Small, Rugged, Thermowatt Construction for Low Thermal resistance and High

Heat Dissipation

• Center Gate Geometry for Uniform Current Spreading

• Gate Triggering Guaranteed in Four Modes

MT2

MT1

MT2

MAXIMUM RATINGS

Peak Repetitive Off-State Voltage

(TJ = –40 to 110°C,
1/2 Sine Wave 50 to 60 Hz, Gate Open)

On-State RMS Current (TC = 80°C)

Full Cycle Sine Wave 50 to 60 Hz

Peak Non–repetitive Surge Current

(One Full Cycle 60 Hz, TJ = 110°C)

Circuit Fusing

(t = 8.3 ms)
Peak Gate Current (t p2 µs) I
Peak Gate Voltage (t p2 µs) V
Peak Gate Power (t p2 µs) P
Average Gate Power

(TC = 80°C, t p 8.3 ms)
Operating Junction Temperature Range T
Storage Temperature Range T
Mounting Torque 8 in. lb.

1. V

2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic

for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the

DRM

voltage ratings of the devices are exceeded.

body.

(TJ = 25°C unless otherwise noted.)

Rating

(1)

MAC229A8FP

Symbol Value Unit

V

DRM

I

T(RMS)

I

TSM

I2t 26 A2s

GM

GM
GM

P

G(AV)

J

stg

TRIACs

8 AMPERES RMS

600 VOL TS

CASE 221C-02

G

600

8 Amps

80 Amps

"

2 Amps

"

10 Volts

20 Watts

0.5 Watts

–40 to 110 °C
–40 to 150 °C

STYLE 3

Volts

MT1

G

Motorola Thyristor Device Data

 Motorola, Inc. 1999

1

MAC229A8FP

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R
Thermal Resistance, Case to Sink R
Thermal Resistance, Junction to Ambient R

ELECTRICAL CHARACTERISTICS (T

Characteristic

Peak Blocking Current

(VD = Rated V

Peak On-State Voltage

(ITM = 11 A Peak, Pulse Width p 2 ms, Duty Cycle p 2%)
Gate Trigger Current (Continuous dc)

(VD = 12 V, RL = 100 Ω)

MT2(+), G(+); MT2(+), G(–); MT2(–), G(–)

MT2(–), G(+)
Gate Trigger Voltage (Continuous dc)

(VD = 12 V, RL = 100 Ω)

MT2(+), G(+); MT2(+), G(–); MT2(–), G(–)

MT2(–), G(+)

(VD = Rated V

MT2(+), G(+); MT2(+), G(–); MT2(–), G(–)

MT2(–), G(+)
Holding Current

(VD = 12 Vdc, ITM = 200 mA, Gate Open)
Gate–Controlled Turn–On Time

(VD = Rated V
Critical Rate of Rise of Off–State V oltage

(VD = Rated V
Critical Rate of Rise of Commutation Voltage

(VD = Rated V

Commutating di/dt = 4.1 A/ms, Gate Unenergized, TC = 80°C)

1. Ratings apply for open gate conditions. Devices shall not be tested with a constant current source for blocking voltage such that the voltage
applied exceeds the rated blocking voltage.

(1)

, Open Gate) TJ = 25°C

DRM

, TC = 110°C, RL = 10 k)

DRM

, ITM = 16 A Peak, IG = 30 mA)

DRM

, Exponential Waveform, TC = 110°C)

DRM

, ITM = 11.3 A,

DRM

= 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted.)

C

Symbol Min Typ Max Unit

I

TJ = 110°C

dv/dt(c) — 5 — V/µs

θJC

θCS

θJA

DRM

V

TM

I

GT

V

GT

I

H

t

gt

dv/dt — 25 — V/µs

—
—

— — 1.8 Volts

—
—

—
—

0.2

0.2
— — 15 mA

— 1.5 — µs

2.2 °C/W

2.2 (typ) °C/W
60 °C/W

—
—

—
—

—
—

—
—

10

2

5

10

2

2.5

—
—

µA

mA

mA

Volts

110

104

°

98

92

, CASE TEMPERATURE ( C)

C

86

T

80

α

α

= CONDUCTION ANGLE

α

I

, RMS ON–STATE CURRENT (AMP)

T(RMS)

a

= 30

°

60

°

90

°

120

°

180

°

dc

7.0 8.0

6.00

5.01.0 2.0 3.0 4.0

8.0

6.0

4.0

, AVERAGE POWER (WATTS)

2.0

(AV)

P

10

α

α

= CONDUCTION ANGLE

TJ ≈ 110°C

0

I

T(RMS)

α

60

°

30

°

, RMS ON–STATE CURRENT (AMP)

a

= 180

°

120

°

90

°

5.01.0 2.0 3.0 4.0 7.0 8.0

dc

6.00

2 Motorola Thyristor Device Data

P ACKAGE DIMENSIONS

MAC229A8FP

–Y–

SEATING

–T–

–B–

P

F

C

N

PLANE

S

E

Q

H

123

A

STYLE 3:

PIN 1. MT 1

2. MT 2

3. GATE

K

Z

L

G

3 PL

D

0.25 (0.010)

J

R

M

M

B

Y

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. LEAD DIMENSIONS UNCONTROLLED WITHIN
DIMENSION Z.

DIM MIN MAX MIN MAX

A 0.680 0.700 17.28 17.78
B 0.388 0.408 9.86 10.36
C 0.175 0.195 4.45 4.95
D 0.025 0.040 0.64 1.01
E 0.340 0.355 8.64 9.01
F 0.140 0.150 3.56 3.81
G 0.100 BSC 2.54 BSC
H 0.110 0.155 2.80 3.93
J 0.018 0.028 0.46 0.71
K 0.500 0.550 12.70 13.97
L 0.045 0.070 1.15 1.77
N 0.049 ––– 1.25 –––
P 0.270 0.290 6.86 7.36
Q 0.480 0.500 12.20 12.70
R 0.090 0.120 2.29 3.04
S 0.105 0.115 2.67 2.92
Z 0.070 0.090 1.78 2.28

MILLIMETERSINCHES

CASE 221C-02

ISSUE B

Motorola Thyristor Device Data

3

MAC229A8FP

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters which may be provided in Motorola
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4 Motorola Thyristor Device Data

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MAC229A8FP/D