Datasheet MAC218A8 Datasheet (MOTOROLA)

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MOTOROLA
查询MAC218A8/D供应商
SEMICONDUCTOR TECHNICAL DATA
Triacs
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies.
Blocking Voltage to 600 Volts
Glass Passivated Junctions for Greater Parameter Uniformity and Stability
bility
Gate Triggering Guaranteed in Four Modes
Order this document
by MAC218A8/D
MAC218A8
TRIACs
8 AMPERES RMS
600 VOL TS
MT2
G
MT1
MT2
MAXIMUM RATINGS
Peak Repetitive Off-State Voltage
(Gate Open, TJ = 25 to 125°C) MAC218A8
On-State Current RMS
(Conduction Angle = 360°, TC = +80°C)
Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, TC = 80°C, preceded and followed by rated current)
Fusing Current
(t = 8.3 ms)
Peak Gate Power
(TC = +80°C, Pulse Width = 2 µs)
Average Gate Power
(TC = +80°C, t = 8.3 ms)
Peak Gate Trigger Current
(Pulse Width = 1 µs) Operating Junction Temperature Range T Storage Temperature Range T
1. V
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that
DRM
the voltage ratings of the devices are exceeded.
(TJ = 25°C unless otherwise noted.)
Rating
(1)
MT1
MT2
G
CASE 221A-07
(TO-220AB)
STYLE 4
Symbol Value Unit
V
DRM
I
T(RMS)
I
TSM
I2t 40 A2s
P
GM
P
G(AV)
I
GTM
J
stg
600
8 Amps
100 Amps
16 Watts
0.35 Watt
4 Amps
–40 to +125 °C –40 to +150 °C
Volts
Motorola Thyristor Device Data
Motorola, Inc. 1999
1
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MAC218A8
THERMAL CHARACTERISTICS
Symbol Parameter Value Unit
R
θJC
R
θJA T
L
ELECTRICAL CHARACTERISTICS (T
Peak Blocking Current
(VD = Rated V
Peak On-State Voltage (Either Direction)
(ITM = 11.3 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle t 2%) Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 12)
Trigger Mode
MT2(+), Gate(+); MT2(+), Gate(–); MT2(–), Gate(–)
MT2(–), Gate(+) Gate Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) MT2(–), G(+)
(Main Terminal Voltage = Rated V
MT2(+), G(+); MT2(–), G(–); MT2(+), G(–) MT2(–), G(+)
Holding Current (Either Direction)
(VD = 24 Vdc, Gate Open,
Initiating Current = 200 mA) Critical Rate of Rise of Commutating Off-State Voltage
(VD = Rated V
di/dt = 4.1 A/ms, Gate Unenergized, TC = 80°C) Critical Rate of Rise of Off-State V oltage
(VD = Rated V
TJ = 125°C)
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds 260 °C
= 25°C unless otherwise noted.)
C
Characteristic
, gate open) TJ = 25°C
DRM
, ITM = 11.3 A, Commutating
DRM
, Exponential Voltage Rise, Gate Open,
DRM
TJ = 125°C
, RL = 10 k, TJ = +125°C)
DRM
Symbol Min Typ Max Unit
I
DRM
V
TM
I
GT
V
GT
I
H
dv/dt(c) 5 V/µs
dv/dt 100 V/µs
— —
1.7 2 Volts
— —
— — — —
0.2
0.2 — 50 mA
— —
— —
0.9
0.9
1.1
1.4
— —
2.0
62.5
10
2
50 75
2 2 2
2.5
— —
°C/W
µA
mA
mA
Volts
FIGURE 2 — POWER DISSIPATION
I
RMS ON STATE CURRENT (AMPS)
T(RMS)
7.06.05.04.03.02.01.00
125
115
°
105
95
TEMPERATURE ( C)
85
C
T , MAXIMUM ALLOWABLE CASE
75
FIGURE 1 — CURRENT DERATING
10
8.0
6.0
4.0
2.0
(AV)
P , AVERAGE POWER DISSIPATION (WATTS)
0
I
, RMS ON STATE CURRENT (AMPS)
T(RMS)
8.07.06.05.04.03.02.01.0
0
2 Motorola Thyristor Device Data
8.0
Page 3
MAC218A8
GT
I , NORMALIZED GATE TRIGGER CURRENT (mA)
FIGURE 3 — NORMALIZED GATE TRIGGER
5.0
3.0
2.0
QUADRANT
1.0
0.7
0.5
1 2
3 4
CURRENT
OFF-STATE VOLTAGE = 12 V
80 140120100–40 604020–20 0–60
TJ, JUNCTION TEMPERATURE (
FIGURE 5 — NORMALIZED HOLDING CURRENT
2.0
1.0
FIGURE 4 — NORMALIZED GATE TRIGGER
1.8
1.6
1.4
1.2
1.0
0.8 QUADRANTS
0.6
0.4
GT
V , NORMALIZED GATE TRIGGER VOLTAGE (VOLTS)
°
C)
MAIN TERMINAL #1
–40 100 120 14080
–60
GATE OPEN
POSITIVE
1 2
3
–20 2004060
TJ, JUNCTION TEMPERATURE (°C)
VOLTAGE
OFF-STATE VOLTAGE = 12 V
QUADRANT 4
0.7
0.5
0.3
H
I , NORMALIZED HOLDING CURRENT (mA)
0.2 –60
–40
MAIN TERMINAL #2
POSITIVE
8060200
TJ, JUNCTION TEMPERATURE (
14012040–20 100
°
C)
Motorola Thyristor Device Data
3
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MAC218A8
P ACKAGE DIMENSIONS
SEATING
–T–
PLANE
FB
Q
4
A
123
T
U
H
C
S
STYLE 4:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
4. MAIN TERMINAL 2
K
Z
L
V
R
J
G
D
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.
DIM MIN MAX MIN MAX
A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.014 0.022 0.36 0.55 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 ––– 1.15 ––– Z ––– 0.080 ––– 2.04
MILLIMETERSINCHES
CASE 221A-07
(TO–220AB)
ISSUE Z
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4 Motorola Thyristor Device Data
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MAC218A8/D
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