Datasheet MAC212AFP Datasheet (MOTOROLA)

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SEMICONDUCTOR TECHNICAL DATA

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MAC212AFP

Triacs

Series

Silicon Bidirectional Thyristors

. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.

• Blocking Voltage to 800 Volts

• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity

and Stability

• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability

• Gate Triggering Guaranteed in Four Modes

G

V

DRM

I

T(RMS)

I

TSM

GM

G(AV)

GM

(ISO)

stg

MT1

J

MT2

MAXIMUM RATINGS

Repetitive Peak Off-State Voltage

1/2 Sine Wave 50 to 60 Hz, Gate Open)

On-State RMS Current (TC = +85°C ) Full Cycle Sine Wave 50 to 60 Hz
Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = +85°C)

preceded and followed by rated current
Circuit Fusing (t = 8.3 ms) I2t 40 A2s
Peak Gate Power (TC = +85°C, Pulse Width = 10 µs) P
Average Gate Power (TC = +85°C, t = 8.3 ms) P
Peak Gate Current (TC = +85°C, Pulse Width = 10 µs) I
RMS Isolation Voltage (TA = 25°C, Relative Humidity p 20%) V
Operating Junction Temperature T
Storage Temperature Range T

(TJ = 25°C unless otherwise noted.)

Rating Symbol Value Unit

(1)

(TJ = –40 to +125°C,

MAC212A6FP
MAC212A8FP
MAC212A10FP

(2)

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R
Thermal Resistance, Case to Sink R
Thermal Resistance, Junction to Ambient R

1. V

2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic

for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the

DRM

voltage ratings of the devices are exceeded.

body.

θJC

θCS

θJA

ISOLATED TRIACs

THYRISTORS

12 AMPERES RMS

400 thru 800 VOL TS

MT1

MT2

G

CASE 221C-02

STYLE 3

Volts

400
600
800

12 Amps

100 Amps

20 Watts

0.35 Watt
2 Amps

1500 Volts
–40 to +125 °C
–40 to +150 °C

2.1 °C/W

2.2 (typ) °C/W
60 °C/W

Motorola Thyristor Device Data

 Motorola, Inc. 1999

1

 

ELECTRICAL CHARACTERISTICS

Characteristic

Peak Blocking Current (Either Direction)

(VD = Rated V

Peak On-State Voltage (Either Direction)

(ITM = 17 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p 2%)

Gate Trigger Current (Continuous dc)

(Main T erminal Voltage = 12 Vdc, RL = 100 Ohms,
Minimum Gate Pulse Width = 2 µs)

MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)

Gate Trigger Voltage (Continuous dc)

(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms,
Minimum Gate Pulse Width = 2 µs)

MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)

(Main Terminal Voltage = Rated V

MT2(+), G(+); MT2(+), G(–); MT2(–), G(–)
MT2(–), G(+)

Holding Current (Either Direction)

(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = 500 mA)

Turn-On Time

(VD = Rated V
Rise Time = 0.1 µs, Pulse Width = 2 µs)

Critical Rate of Rise of Commutation Voltage

(VD = Rated V
Gate Unenergized, TC = +85°C)

Critical Rate of Rise of Off–State V oltage

(VD = Rated V
TC = +85°C)

, Gate Open) TJ = 25°C

DRM

, ITM = 17 A, IGT = 120 mA,

DRM

, ITM = 17 A, Commutating di/dt = 6.1 A/ms,

DRM

, Exponential Voltage Rise, Gate Open,

DRM

(TC = 25°C unless otherwise noted.)

TJ = +125°C

, RL = 10 kΩ, TJ = +125°C)

DRM

Symbol Min Typ Max Unit

I

DRM

V

TM

I

GT

V

GT

I

H

t

gt

dv/dt

(c)

dv/dt — 100 — V/µs

—
—

— 1.3 1.75 Volts

—
—
—
—

—
—
—
—

0.2

0.2
— 6 50 mA

— 1.5 — µs

— 5 — V/µs

—
—

12
12
20
35

0.9

0.9

1.1

1.4

—
—

10

50
50
50
75

2.5

—
—

2

2
2
2

µA

mA

mA

Volts

TYPICAL CHARACTERISTICS

°

125

115

105

95

85

75

C

T , MAXIMUM ALLOWABLE CASE TEMPERATURE ( C)

α

α

α

= CONDUCTION ANGLE

I

, RMS ON–STATE CURRENT (AMPS)

T(RMS)

α

= 30

°

60

°

90

°

180

°

dc

100 2.0 4.0 6.0 8.0

12 14

Figure 1. Current Derating

2 Motorola Thyristor Device Data

28

24

20

16

12

8.0

, AVERAGE POWER DISSIP ATION (WATTS)

4.0

D(AV)

P

α

α

α

= CONDUCTION ANGLE

0

I

, RMS ON–STATE CURRENT (AMPS)

T(RMS)

100 2.0 4.0 6.0 8.0 12 14

dc

α

90
60
30

= 180

°
°
°

°

Figure 2. Power Dissipation

 

100

50

20

10

5

2
1

0.5

, INSTANTANEOUS ON–STA TE CURRENT (AMPS)

T

i

0.2

0.1

0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 4.4

vT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS)

TJ = 25°C

TJ = 125°C

Figure 3. Maximum On–State Characteristics

100

80

60

40

, PEAK SURGE CURRENT (AMP)

20

TSM

I

0

CYCLE

TC = 70°C
f = 60 Hz
SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT

NUMBER OF CYCLES

Figure 4. Maximum Nonrepetitive Surge Current

2

1.6

1.2

OFF–STATE VOLTAGE = 12 Vdc

ALL MODES

1012357

2

1.6

1.2

0.8

0.4

, GATE TRIGGER CURRENT (NORMALIZED)

GT

I

0

–60 –40 –20 0 20 40 60 80

TC, CASE TEMPERATURE (

OFF–STATE VOLTAGE = 12 Vdc

ALL MODES

°

C)

0.8

0.4

, GATE TRIGGER VOLTAGE (NORMALIZED)

GT

V

0

–60 –40 –20 0 20 40 60 80

°

TC, CASE TEMPERATURE (

C)

Figure 5. T ypical Gate Trigger Voltage

2.8

2.4

2

1.6

1.2

0.8

, HOLDING CURRENT (NORMALIZED)

0.4

H

I

0

–60 –40 –20 0 20 40 60 80

TC, CASE TEMPERATURE (

OFF–STATE VOLTAGE = 12 Vdc

ALL MODES

°

C)

Figure 6. T ypical Gate Trigger Current

Motorola Thyristor Device Data

Figure 7. T ypical Holding Current

3

 

1

0.5

0.2
Z

θ

JC(t)

= r(t)

•

R

0.1

(NORMALIZED)

0.05

0.02

r(t), TRANSIENT THERMAL RESIST ANCE

0.01

0.1 0.2 0.5 1 2 5 20 50 100 200 500 1 k 2 k 5 k 10 k
t, TIME (ms)

Figure 8. Thermal Response

P ACKAGE DIMENSIONS

–Y–

SEATING

–T–

–B–

P

F

C

N

PLANE

S

E

H

Q

123

A

STYLE 3:

PIN 1. MT 1

2. MT 2

3. GATE

K

Z

L

G

3 PL

D

0.25 (0.010)

J

R

M

M

B

Y

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. LEAD DIMENSIONS UNCONTROLLED WITHIN
DIMENSION Z.

DIM MIN MAX MIN MAX

A 0.680 0.700 17.28 17.78
B 0.388 0.408 9.86 10.36
C 0.175 0.195 4.45 4.95
D 0.025 0.040 0.64 1.01
E 0.340 0.355 8.64 9.01
F 0.140 0.150 3.56 3.81
G 0.100 BSC 2.54 BSC
H 0.110 0.155 2.80 3.93
J 0.018 0.028 0.46 0.71
K 0.500 0.550 12.70 13.97
L 0.045 0.070 1.15 1.77
N 0.049 ––– 1.25 –––
P 0.270 0.290 6.86 7.36
Q 0.480 0.500 12.20 12.70
R 0.090 0.120 2.29 3.04
S 0.105 0.115 2.67 2.92
Z 0.070 0.090 1.78 2.28

MILLIMETERSINCHES

θ

JC

CASE 221C-02

ISSUE B

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
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4 Motorola Thyristor Device Data

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MAC212A6FP/D