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SEMICONDUCTOR TECHNICAL DATA
Triacs
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
• Blocking Voltage to 800 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High
Heat Dissipation and Durability
• Gate Triggering Guaranteed in Four Modes
Order this document
by MAC212A8/D
MAC212A
Series
TRIACs
12 AMPERES RMS
600 thru 800 VOL TS
MT2
MT1
G
MT1
MT2
G
CASE 221A-07
(TO-220AB)
STYLE 4
MAXIMUM RATINGS
Repetitive Peak Off-State Voltage
1/2 Sine Wave 50 to 60 Hz, Gate Open)
On-State Current RMS (TC = +85°C)
Full Cycle Sine Wave 50 to 60 Hz
Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TC = +85°C)
preceded and followed by Rated Current
Circuit Fusing Considerations (t = 8.3 ms) I2t 40 A2s
Peak Gate Power (TC = +85°C, Pulse Width = 10 µs) P
Average Gate Power (TC = +85°C, t = 8.3 ms) P
Peak Gate Current (TC = +85°C, Pulse Width = 10 µs) I
Operating Junction Temperature Range T
Storage Temperature Range T
1. V
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that
DRM
the voltage ratings of the devices are exceeded.
(TJ = 25°C unless otherwise noted.)
Rating
(1)
(TJ = –40 to +125°C,
MAC212A8
MAC212A10
Symbol Value Unit
V
DRM
600
800
I
T(RMS)
I
TSM
GM
G(AV)
GM
J
stg
12 Amp
100 Amp
20 Watts
0.35 Watt
2 Amp
–40 to +125 °C
–40 to +150 °C
MT2
Volts
Motorola Thyristor Device Data
Motorola, Inc. 1999
1
Page 2
THERMAL CHARACTERISTICS
Symbol Parameter Value Unit
R
θJC
R
θJA
T
L
ELECTRICAL CHARACTERISTICS (T
Peak Blocking Current (Either Direction)
(VD = Rated V
Peak On-State Voltage (Either Direction)
ITM = 17 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p 2%
Gate Trigger Current (Continuous dc)
(Main T erminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
Gate Trigger Voltage (Continuous dc)
(Main T erminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
(Main Terminal Voltage = Rated V
MT2(+), G(+); MT2(–), G(–); MT2(+), G(–)
MT2(–), G(+)
Holding Current (Either Direction)
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = 500 mA)
Turn-On Time
(VD = Rated V
Rise Time = 0.1 µs, Pulse Width = 2 µs)
Critical Rate of Rise of Commutation Voltage
(VD = Rated V
Gate Unenergized, TC = +85°C)
Critical Rate of Rise of Off-State V oltage
(VD = Rated V
TC = +85°C)
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds 260 °C
= 25°C unless otherwise noted.)
C
Characteristic
, Gate Open) TJ = 25°C
DRM
, ITM = 17 A, IGT = 120 mA,
DRM
, ITM = 17 A, Commutating di/dt = 6.1 A/ms,
DRM
, Exponential Voltage Rise, Gate Open,
DRM
TJ = +125°C
, RL = 10 kΩ, TJ = +125°C)
DRM
Symbol Min Typ Max Unit
I
DRM
V
TM
I
GT
V
GT
I
H
t
gt
dv/dt
(c)
dv/dt — 100 — V/µs
—
—
— 1.3 1.75 Volts
—
—
—
—
—
—
—
—
0.2
0.2
— 6 50 mA
— 1.5 — µs
— 5 — V/µs
—
—
12
12
20
35
0.9
0.9
1.1
1.4
—
—
2.0
62.5
10
2
50
50
50
75
2
2
2
2.5
—
—
°C/W
µA
mA
mA
Volts
°
125
115
105
95
85
75
C
0 2.0 4.0 6.0 8.0 10 12
T , MAXIMUM ALLOWABLE CASE TEMPERATURE ( C)
FIGURE 1 — CURRENT
DERATING
α
α
α
= CONDUCTION ANGLE
I
, RMS ON-STATE CURRENT (AMP)
T(RMS)
α
= 30
60
90
180
dc
28
24
20
°
°
°
°
14
D(AV)
P , AVERAGE POWER DISSIPATION (WATT)
16
12
8.0
4.0
α
= CONDUCTION ANGLE
0
FIGURE 2 — POWER
DISSIPATION
α
α
I
, RMS ON-STATE CURRENT (AMP)
T(RMS)
dc
α
= 180
90
60
30
2 Motorola Thyristor Device Data
°
°
°
°
1412106.0 8.04.02.00
Page 3
FIGURE 3 — MAXIMUM ON-STATE CHARACTERISTICS
100
50
20
10
5.0
2.0
1.0
0.5
, INSTANTANEOUS ON-STATE CURRENT (AMPS)
T
I
0.2
0.1
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
TJ = 25°C
TJ = 125°C
4.4
FIGURE 4 — MAXIMUM NON-REPETITIVE SURGE CURRENT
100
80
60
40
20
TSM
I , PEAK SURGE CURRENT (AMP)
0
CYCLE
TC = 70°C
f = 60 Hz
Surge is preceded and followed by rated current
7.01.0 2.0 3.0 5.0
NUMBER OF CYCLES
10
FIGURE 5 — TYPICAL GATE TRIGGER
2.0
1.6
1.2
VOLTAGE
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
FIGURE 6 — TYPICAL GATE TRIGGER
2.0
1.6
1.2
0.8
0.4
GT
I , GATE TRIGGER CURRENT (NORMALIZED)
0
–60 –40 –20 0 20
CURRENT
TC, CASE TEMPERATURE (°C)
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
40
60
80
0.8
0.4
GT
0
V , GATE TRIGGER VOLTAGE (NORMALIZED)
2.8
2.4
2.0
1.6
1.2
0.8
0.4
H
I , HOLDING CURRENT (NORMALIZED)
0
–60
TC, CASE TEMPERATURE (
°
C)
FIGURE 7 — TYPICAL HOLDING
CURRENT
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
TC, CASE TEMPERATURE (
°
C)
806040200–20–40–60
806040200–20–40
Motorola Thyristor Device Data
3
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1.0
0.5
0.2
0.1
0.05
(NORMALIZED)
0.02
r(t), TRANSIENT THERMAL RESIST ANCE
0.01
0.2
0.5
FIGURE 8 – THERMAL RESPONSE
10050205.02.01.0
t, TIME (ms)
P ACKAGE DIMENSIONS
Z
= r(t) • R
θ
JC(t)
θ
JC
10 k200 5.0 k2.0 k1.0 k5000.1
SEATING
–T–
PLANE
FB
Q
4
A
123
T
U
H
K
C
S
STYLE 4:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
4. MAIN TERMINAL 2
Z
L
V
R
J
G
D
N
CASE 221A-07
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93
J 0.014 0.022 0.36 0.55
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 ––– 1.15 –––
Z ––– 0.080 ––– 2.04
MILLIMETERSINCHES
(TO–220AB)
ISSUE Z
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
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4 Motorola Thyristor Device Data
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MAC212A8/D
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