Datasheet MAC 15A10G Datasheet

MAC15 Series

Preferred Device

Triacs

Silicon Bidirectional Thyristors

Designed primarily for full-wave ac control applications, such as
solid–state relays, motor controls, heating controls and power
supplies; or wherever full–wave silicon gate controlled solid–state
devices are needed. Triac type thyristors switch from a blocking to a
conducting state for either polarity of applied main terminal voltage
with positive or negative gate triggering.

• Blocking Voltage to 800 Volts

• All Diffused and Glass Passivated Junctions for Greater Parameter

Uniformity and Stability

• Small, Rugged, Thermowatt Construction for Low Thermal

Resistance, High Heat Dissipation and Durability

• Gate Triggering Guaranteed in Three Modes (MAC15 Series) or

Four Modes (MAC15A Series)

• Device Marking: Logo, Device T ype, e.g., MAC15A6, Date Code

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TRIACS

15 AMPERES RMS

400 thru 800 VOLTS

MT2

MT1

G

MAXIMUM RATINGS (T

Rating

Peak Repetitive Off–State V oltage

(TJ = –40 to +125°C, Sine Wave 50 to
60 Hz, Gate Open)

Peak Gate Voltage

(Pulse Width v 1.0 µsec; TC = 90°C)

On–State Current RMS

Full Cycle Sine Wave 50 to 60 Hz

(TC = +90°C)
Circuit Fusing Consideration (t = 8.3 ms) I2t 93 A2s
Peak Non–repetitive Surge Current

(One Full Cycle Sine Wave,

60 Hz, TC = +80°C)

Preceded and followed by rated current
Peak Gate Power (TC = +80°C,

Pulse Width = 1.0 µs)
Average Gate Power

(TC = +80°C, t = 8.3 ms)
Peak Gate Current

(Pulse Width v 1.0 µsec; TC = 90°C)
Operating Junction Temperature Range T

Storage Temperature Range T

(1) V

DRM

voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.

MAC15A6
MAC15–8, MAC15A8
MAC15–10, MAC15A10

and V

RRM

= 25°C unless otherwise noted)

J

Symbol Value Unit

(1)

for all types can be applied on a continuous basis. Blocking

V

DRM,

V

RRM

V

GM

I

T(RMS)

I

TSM

P

GM

P

G(AV)

I

GM

J

stg

400
600
800

10 Volts

15 A

150 A

20 Watts

0.5 Watts

2.0 A

–40 to

+125

–40 to

+150

Volts

°C

°C

4

1

2

3

TO–220AB

CASE 221A

STYLE 4

PIN ASSIGNMENT

1
2
3 Gate
4

Main Terminal 1
Main Terminal 2

Main Terminal 2

ORDERING INFORMATION

Device Package Shipping

MAC15–8 TO220AB 500/Box
MAC15–10 TO220AB
MAC15A6 TO220AB

MAC15A8 TO220AB 500/Box
MAC15A10 TO220AB 500/Box

Preferred devices are recommended choices for future use
and best overall value.

500/Box
500/Box

 Semiconductor Components Industries, LLC, 1999

February , 2000 – Rev. 1

1 Publication Order Number:

MAC15A4/D

MAC15 Series

THERMAL CHARACTERISTICS

Characteristic Symbol Value Unit

Thermal Resistance — Junction to Case

Thermal Resistance — Junction to Ambient

Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds T

R
R

θJC
θJA

L

2.0

62.5
260 °C

°C/W

ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25°C unless otherwise noted; Electricals apply in both directions)

C

OFF CHARACTERISTICS

Peak Blocking Current TJ = 25°C

(VD = Rated V

DRM

, V

; Gate Open) TJ = 125°C

RRM

ON CHARACTERISTICS

, ITM = 17 A)

DRM

(1)

(ITM = "21 A Peak) V

Peak On–State Voltage
Gate Trigger Current (Continuous dc)

(VD = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+) “A’’ SUFFIX ONLY

Gate Trigger Voltage (Continuous dc)

(VD = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+) “A’’ SUFFIX ONLY

Gate Non–Trigger Voltage

(VD = 12 V, RL = 100 Ohms, TJ = 110°C)
MT2(+), G(+); MT2(–), G(–); MT2(+), G(–)
MT2(–), G(+) “A’’ SUFFIX ONLY

Holding Current

(VD = 12 Vdc, Gate Open, Initiating Current = "200 mA)

Turn-On Time

(VD = Rated V
(IGT = 120 mA, Rise Time = 0.1 µs, Pulse Width = 2 µs)

DYNAMIC CHARACTERISTICS

Critical Rate of Rise of Commutation Voltage

(VD = Rated V
Gate Unenergized, TC = 80°C)

(1) Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

, ITM = 21 A, Commutating di/dt = 7.6 A/ms,

DRM

Symbol Min Typ Max Unit

I

DRM,

I

RRM

TM

I

GT

V

GT

V

GD

I

H

t

gt

dv/dt(c) — 5.0 — V/µs

—
—

— 1.3 1.6 Volts

—
—
—
—

—
—
—
—

0.2

0.2

— 6.0 40
— 1.5 — µs

—
—

—
—
—
—

0.9

0.9

1.1

1.4

—
—

10

2.0

50
50
50
75

2.5

—
—

µA

mA

mA

Volts

2
2
2

Volts

mA

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2

Symbol Parameter

V

DRM

I

DRM

V

RRM

I

RRM

V

TM

I

H

Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current

Maximum On State Voltage
Holding Current

MAC15 Series

Voltage Current Characteristic of Triacs

(Bidirectional Device)

on state

I

at V

RRM

Quadrant Definitions for a Triac

MT2 POSITIVE

(Positive Half Cycle)

+

RRM

Quadrant 3
MainTerminal 2 –

V

TM

+ Current

I

H

V

I

H

off state

TM

Quadrant 1
MainTerminal 2 +

I

at V

DRM

DRM

+ Voltage

(+) MT2

Quadrant II Quadrant I

IGT – + I

Quadrant III Quadrant IV

All polarities are referenced to MT1.
With in–phase signals (using standard AC lines) quadrants I and III are used.

(–) I

GATE

(–) I

GATE

GT

MT1

REF

(–) MT2

GT

MT1

REF

–

MT2 NEGATIVE

(Negative Half Cycle)

(+) I

GATE

(+) I

GATE

(+) MT2

GT

MT1

REF

(–) MT2

GT

MT1

REF

GT

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3

MAC15 Series

130

20

120

110

α

I

T(RMS),

α = 180°

α

RMS ON–STATE CURRENT (AMP)

100

, CASE TEMPERATURE ( C)°

C

90

T

α = CONDUCTION ANGLE

80

0246810121416

α = 30°
α = 60°
α = 90°

dc

TJ ≈ 125°

α = 180°

16

12

, A VERAGE POWER (WATTS)

AV

P

TJ ≈ 125°

α

α

α = CONDUCTION ANGLE

8

4

0

0246810121416

I

ON–STATE CURRENT (AMP)

T(RMS),

dc

120°
90°
60°

30°

Figure 1. RMS Current Derating

1.8

1.6

1.4

1.2

1.0

0.8
QUADRANTS

, GATE TRIGGER VOLTAGE (VOLTS)

0.6

GT

V

0.4

–60 –40 –20 0 20 40 60 80 100

1
2
3

TJ, JUNCTION TEMPERATURE (°C)

OFF–STATE VOLTAGE = 12 V

QUADRANT 4

Figure 3. T ypical Gate Trigger Voltage

120 140

Figure 2. On–State Power Dissipation

50

OFF–STATE VOLTAGE = 12 V

30

20

10

, GATE TRIGGER CURRENT (mA)

QUADRANT

GT

I

7.0

5.0
–60 –40 –20 0 20 40 60 80 100

1
2
3

4

TJ, JUNCTION TEMPERATURE (°C)

Figure 4. T ypical Gate Trigger Current

120 140

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4

MAC15 Series

100

20

70
50

30

20

10

7
5

3

2

1

, INSTANTANEOUS FORWARD CURRENT (AMP)

TM

i

0.7

0.5

0.3

0.2

0.1

0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6
vTM, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS)

TJ = 25°C

125°C

4 4.4

MAIN TERMINAL #1

POSITIVE

10

7.0

5.0

, HOLDING CURRENT (mA)

H

3.0

2.0
–60 –40 –20 0 20 40 60 80 100

MAIN TERMINAL #2

POSITIVE

TJ, JUNCTION TEMPERATURE (°C)

GATE OPEN

Figure 6. Typical Holding Current

300

200

100

70

, PEAK SURGE CURRENT (AMP) I

SM

T

TC = 80°C

50

T f = 60 Hz

Surge is preceded and followed by rated current

30

1235

NUMBER OF CYCLES

120 140

710

1

0.5

0.2

0.1

(NORMALIZED)

0.05

0.02

r(t) TRANSIENT THERMAL RESIST ANCE

0.01

0.1 0.2 0.5

Figure 5. On–State Characteristics

2 5 10 20 50 100 200 500 1 k 2 k 5 k 10 k

1

Figure 7. Maximum Non–Repetitive

t, TIME (ms)

Figure 8. Thermal Response

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5

Surge Current

Z

θJC(t) = r(t)

• R

θJC

MAC15 Series

P ACKAGE DIMENSIONS

TO–220AB

CASE 221A–07

ISSUE Z

SEATING

–T–

PLANE

FB

Q

4

A

123

T

U

C

S

H

K

Z

L

V

R

J

G

D

N

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.

DIM MIN MAX MIN MAX

A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93
J 0.014 0.022 0.36 0.55
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 ––– 1.15 –––
Z ––– 0.080 ––– 2.04

STYLE 4:

PIN 1. MAIN TERMINAL 1

2. MAIN TERMINAL 2

3. GATE

4. MAIN TERMINAL 2

MILLIMETERSINCHES

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6

Notes

MAC15 Series

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MAC15 Series

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MAC15A4/D