Datasheet MAC12SNG Specification

MAC12SM, MAC12SN

Pb

Thyristors

Surface Mount – 400V - 800V > MAC12SM, MAC12SN

Description

Designed for industrial and consumer applications for
full wave control of AC loads such as appliance controls,
heater controls, motor controls, and other power switching
applications.

Features

• Uniform Gate Trigger Currents in Three Quadrants, Q1,

Q2, and Q3

• High Commutating di/dt and High Immunity to

dv/dt @ 125°C

• Minimizes Snubber Networks for Protection

Pin Out

• Blocking Voltage to 800 Volts

• On-State Current Rating of 12 Amperes RMS at 80°C

• High Surge Current Capability − 100 Amperes

• Industry Standard TO-220AB Package for Ease of Design

• Glass Passivated Junctions for Reliability and Uniformity

• These Devices are Pb−Free and are RoHS Compliant

Functional Diagram

CASE 221A

STYLE 4

1

2

MT2

MT1

G

Additional Information

Datasheet

Resources

Samples

Specifications are subject to change without notice.

© 2017 Littelfuse, Inc.

Revised: 08/30/17

Thyristors

Surface Mount – 400V - 800V > MAC12SM, MAC12SN

Maximum Ratings (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit

Peak Repetitive Off-State Voltage (Note 1)

(Gate Open, Sine Wave 50 to 60 Hz, T

= 25° to 100°C)

J

MAC12HCDG

MAC12HCMG

V

,

DRM

V

RRM

400

V

600

On-State RMS Current (Full Cycle Sine Wave, 60 Hz, T

Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz, T

= 125°C)

J

Circuit Fusing Consideration (t = 8.3 ms) I

Peak Gate Power
(Pulse Width ≤ 1.0 µs, T

Average Gate Power (t = 8.3 ms, T

= 80°C)

C

= 80°C) P

C

Operating Junction Temperature Range

Storage Temperature Range

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.

Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. V

and V

DRM

potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative

RRM

= 80°C) I

C

T (RMS)

I

TSM

2

t 33 A²sec

P

GM

G (AV)

T

J

T

stg

12 A

90 A

16 W

0.35 W

-40 to +110 °C

-40 to +150 °C

Thermal Characteristics

Rating Symbol Value Unit

Thermal Resistance, Junction−to−Case (AC)

Junction−to−Ambient

Maximum Lead Temperature for Soldering Purposes, 1/8” from case for
10 seconds

R

8JC

R

8JA

T

L

Specifications are subject to change without notice.

2.2
°C/W

62.5

260 °C

© 2017 Littelfuse, Inc.

Revised: 08/30/17

Thyristors

Surface Mount – 400V - 800V > MAC12SM, MAC12SN

Electrical Characteristics - OFF (TJ = 25°C unless otherwise noted ; Electricals apply in both directions)

Characteristic Symbol Min Typ Max Unit

Peak Repetitive Blocking Current
(V

= V

= V

D

DRM

; Gate Open)

RRM

Electrical Characteristics - ON (T

Peak On−State Voltage (Note 2) (I

Gate Trigger Current

(Continuous dc)

= 12 V, RL = 100 Ω)

(V

D

Holding Current (V

Latching Current

(V

= 24 V, IG = 50 mA)

D

= 12 V, Gate Open, Initiating Current = ±200 mA)

D

= 25°C unless otherwise noted; Electricals apply in both directions)

J

Characteristic Symbol Min Typ Max Unit

= ±11 A) V

TM

= 25°C

T

J

TJ = 125°C

MT2(+), G(+)

I

DRM

I

,

RRM

- - 0.01

- - 2.0

TM

− 1. 2 1.85 V

_ 1. 5 5.0

I

GT

MT2(−), G(−) _ 2.7 5.0

– 2.5 10 mA

_ 3.0 15

MT2(+), G(+)

I

H

I

L

MT2(−), G(−) _ 3.0 15

mA

mAMT2(+), G(−) _ 2.5 5.0

mAMT2(+), G(−) _ 5.0 20

Gate Trigger Voltage

= 12 V, RL = 100 Ω)

(V

D

MT2(+), G(+)

V

GT

0.45 0.68 1.5

VMT2(+), G(−) 0.45 0.62 1.5

MT2(−), G(−) 0.45 0.67 1.5

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may
not be indicated by the Electrical Characteristics if operated under different conditions.

2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

Dynamic Characteristics

Characteristic Symbol Min Typ Max Unit

Rate of Change of Commutating Current See Figure 10.
(V

= 400 V, ITM = 4.4 A, Commutating dv/dt = 18 V/µs,Gate Open, TJ = 125°C,

D

f = 250 Hz, No Snubber) CL = 10 µF LL = 40 mH

Critical Rate of Rise of Off-State Voltage

(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)

Repetitive Critical Rate of Rise of On-State Current

IPK = 50 A; PW = 40 µsec; diG/dt = 100 mA/µsec; Igt = 100 mA; f = 60 Hz

dV/dt 8.0 10 − A/ms

dV/dt 15 40 − V/µs

di/dt − − 10 A/µs

Specifications are subject to change without notice.

© 2017 Littelfuse, Inc.

Revised: 08/30/17

Thyristors

Surface Mount – 400V - 800V > MAC12SM, MAC12SN

Voltage Current Characteristic of SCR

Symbol Parameter

V

DRM

I

DRM

V

RRM

I

RRM

V

TM

I

H

Peak Repetitive Forward Off State Voltage

Peak Forward Blocking Current

Peak Repetitive Reverse Off State Voltage

Peak Reverse Blocking Current

Maximum On State Voltage

Holding Current

Quadrant Definitions for a Triac

I

at V

RRM

Quadrant 3

RRM

on state

I

V

TM

+C urrent

H

V

I

H

off state

TM

I

DRM

Quadrant 1
MainTerminal 2 +

+V oltage

at V

DRM

I

All polarities are referenced to MT1.

With in−phase signals (using standard AC lines) quadrants I and III are used.

I tnardauQII tnardauQ

VI tnardauQIII tnardauQ

Specifications are subject to change without notice.

© 2017 Littelfuse, Inc.

Revised: 08/30/17

Thyristors

, LATCHING CURRENT (mA)

TJ, JUNCTION TEMPERATURE (°C)

100

1

10

I

L

Q3

Q2

Q1

0.1

Surface Mount – 400V - 800V > MAC12SM, MAC12SN

Figure 1. Typical Gate Trigger Current vs Junction Temperature Figure 2. Typical Gate Trigger Voltage vs Junction Temperature

100

10

1

, GATE TRIGGER CURRENT (mA)

GT

I

0.1

Q2

Q3

Q1

TJ, JUNCTION TEMPERATURE (°C)

0.90
Q1

0.85

0.80

Q3

0.75
Q2

0.70

0.65

0.60

0.55

0.50

, GATE TRIGGER VOLTAGE (VOLTS)

GT

0.45

V

0.40

TJ, JUNCTION TEMPERATURE (°C)

Figure 4. Typical Latching Current vs Junction TemperatureFigure 3. Typical Holding Current vs Junction Temperature

100

10

1

, HOLDING CURRENT (mA)

H

I

MT2 Positive

MT2 Negative

110

100

90

80

70

, CASE TEMPERATURE (C )°

C

T

60

0 2 4 6 8 10 12

I

T(RMS)

30°, 60°

90°

180°

, RMS ON-STATE CURRENT (AMPS)

DC

0.1

TJ, JUNCTION TEMPERATURE (°C)

Figure 6. On-State Power DissipationFigure 5. Typical RMS Current Derating

25

20

15

10

5

, AVERAGE POWER DISSIPATION (WATTS)

0

0 2 4 6 8 10 12

(AV)

P

, AVERAGE ON-STATE CURRENT (AMPS)

I

T(AV)

Specifications are subject to change without notice.

60°

180°

120°

90°

© 2017 Littelfuse, Inc.

Revised: 08/30/17

DC

30°

Thyristors

Surface Mount – 400V - 800V > MAC12SM, MAC12SN

Figure 7. Typical On-State Characteristics Figure 8. Typical Thermal Response

1

0.1

(NORMALIZED)

r(t), TRANSIENT THERMAL RESISTANCE

0.01

t, TIME (ms)

1000010001001010.1

Specifications are subject to change without notice.

© 2017 Littelfuse, Inc.

Revised: 08/30/17

Thyristors

Surface Mount – 400V - 800V > MAC12SM, MAC12SN

Dimensions Part Marking System

SEATING
PLANE

FB

T

C

S

Q

H

Z

L

V

4

A

12 3

K

G

D

N

Inches Millimeters

Dim

Min Max Min Max

A 0.570 0.620 14.48 15.75

B 0.380 0.405 9.66 10.28

C 0.160 0.190 4.07 4.82

D

0.025 0.035 0.64 0.88

F 0.142 0.147 3.61 3.73

G 0.095 0.105 2.42 2.66

H 0 .110 0.15 5 2.80 3.93

J 0.014 0.022 0.36 0.55

K 0.500 0.562 12.70 14.27

L 0.045 0.060 1. 15 1.52

N 0.190 0.210 4.83 5.33

Q 0.100 0.120 2.54 3.04

R 0.080 0.110 2.04 2.79

S 0.045 0.055 1. 15 1.39

T 0.235 0.255 5.97 6.47

U 0.000 0.050 0.00 1.27

V 0.045 −−− 1. 15 −−−

Z −−− 0.080 −−− 2.04

MAC12SxG

U

1

2

3

R

J

CASE 221A

STYLE 4

x= M, or N
A= Assembly Location

AYWW

Y= Year
WW = Work Week

Pin Assignment

1 Main Terminal 1

2 Main Terminal 2

3 Gate

4 Main Terminal 2

Ordering Information

Device Package Shipping

MAC12SMG

TO-220

(Pb-Free)

50 Units / Rail

MAC12SNG

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,

1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND
LEAD IRREGULARITIES ARE ALLOWED.

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and
test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete
Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics

Specifications are subject to change without notice.

© 2017 Littelfuse, Inc.

Revised: 08/30/17