Datasheet MAAPSM0008TR, MAAPSM0008SMB, MAAPSM0008TR-3000 Datasheet (M A COM)

1-Watt Power Amplifier

Vdd

N/C

N/C

N/C

Vgg

MAAPSM0008

5 - 6 GHz

Features

• U-NII and Hiperlan Applications

• Saturated Output Power 30.5 dBm at +7.0 V

• Power Added Efficiency 40 Percent

• No External RF Matching

• 4-mm FQFP -N, 16 -Lead Package

Description

The MAAPSM0008 is a two-stage power amplifier
mounted in a standard outl ine, 16-lead, 4-mm FQFP -N
plastic package, designed specifically for the U-NII,
MMAC, and Hiperlan bands. The MAAPSM0008 has
fully matched 50 ohms input and output, eliminating
the need for external RF tuning components.

M/A-COM fabricates the MAAPSM0008 using a self ­aligned gate MESFET process to realize high power
efficiency and small size. The process features full
passivation for performance and reliability.

MAAPSM0008

Functional Schematic

Pin 16

N/C

Pin 1

RFin

N/C

N/C N/C N/C

V 1.1

N/C

RFout

N/C

N/CN/C

Pin Configuration

Pin Function

1, 3, 4 ,5 ,7,
8, 9, 12, 13,

14, 15, 16

2 RFIN RF input to the amplifier. DC

6 Vdd Positive voltage supply to

10 RF

11 Vgg Negative voltage supply to

Pad GND RF & DC ground

NC No connection

Specifications subject to change without notice.

n North America: Tel. [phone], Fax [phone]
n Asia/Pacific: Tel.[phone], Fax [phone]
n Europe: Tel. [phone], Fax[phone]

Visit www.macom.com for additional data sheets and product information.

Descriptions

block on-chip. 50 ohm input.

both stages

RF output of the amplifier.

OUT

DC block on-chip. 50 Ohm
output.

the gates of both stages

Ordering Information

Part Number Package

MAAPSM0008TR MAAPSM0008 on 7-inch, 1000-piece reel
MAAPSM0008TR-3000 MAAPSM0008 on 13 inch, 3000-piece reel

MAAPSM0008SMB MAAPSM0008 Sample Test Board

1-Watt, 5 GHz Power Amplifier

MAAPSM0008

V 1.1

Electrical Specifications: T

= 40 °C, VDD = 7.0 V, IDQ = 360 mA

C

(unless otherwise specified)

Parameter Test Conditions Units Min. Typ. Max. Typ. @

VDD + 5 V

Frequency GHz 5.0 6.0
Input VSWR F = 5.825 GHz, Pin = +14 dBm 1.5:1 2.0:1 1.5:1
Gain F = 5.825 GHz, Pin = 0 dBm dB 18.0 19.5 19.0
P1dB F = 5.825 GHz dBm 29.5 28.0
Saturated Power F = 5.825 GHz, Pin = +14 dBm dBm 29.5 30.5 29.0
Drain Current at Psat F = 5.825 GHz, Pin = +14 dBm mA 500 600 500
Harmonics 2ƒ

Thermal resistance °C/W 31 31
Third-Order Intercept

Point
Stability +3.0 V < V

3 ƒ

Output Power = 30.5 dBm dBc

dBm 40 38

< +10.0 V, P

dBm, VSWR < 6:1, -25 ºC < TC < 70
ºC, RBW = 3 MHz max. hold

DD

OUT

< +15

dBc

-40

-70

All spurs < -70 dBc

-40

Recommended Operating Conditions

Characteristic Symbol Unit Min Typ Max

Drain Voltage V
Gate Voltage 2 V
Input Power P
Gate Current I

Case Temperature T

DD

GG

IN

GG

C

1

V 4.5 7.0 8.0
V -2.5 -2.0 -1.0

dBm — 15

mA -4 1 +4

°C -40 25 70

-70

1. Operation outside of these ranges may reduce product reliability.

2. A 100 E-Series resistor should be used in the gate voltage line.

Operating The MAAPSM0008

The MAAPSM0008 is static sensitive. Please handle
with care. To operate the device, follow these steps.

1. Apply VGG = -2 V, VDD= 0 V.

2. Ramp VDD to desired voltage, typically 5 to 7 V.

3. Adjust VGG to set IDQ, (approximately –2 V).

4. Set RF input.

5. Power down sequence in reverse. Turn gate

voltage off last.

Specifications subject to change without notice.

n North America: Tel. [phone], Fax [phone]
n Asia/Pacific: Tel.[phone], Fax [phone]
n Europe: Tel. [phone], Fax[phone]

Visit www.macom.com for additional data sheets and product information.

2

1-Watt, 5 GHz Power Amplifier

C1 R1

Plated Vias

Application Information

Sample Board

Notes on board design

1. Sample board uses RO4350 er = 3.48 as dielec­tric for circuit board. Dielectric thickness is not
critical but RFin and RFout transmission lines
should be 50 ohms (w = 22 mi l for thickness = 10
mil).

2. Solder the exposed paddle on the back of the
package to the board. Proper attachment of the
exposed paddle is essential for RF and DC
ground in addition to providing a low thermal re­sistance.

3. Case temperature (Tc) is measured as shown on
the application board drawing on the top circuit
board metal as close to the body of the package
as possible.

4. The board must provide adequate heat sinking to
accommodate the 2.5 W typically dissipated un­der small signal conditions. Sample board uses
vias in the vicinity of the ground pad to provide a
suitable heat sink connected to the ground plane
of the board as shown above (recommend

theta

5. Placement of C1, C2 and R1 are not critical but
use of 1206 for the bypass caps (C1 and C2) is
critical.

= 5 °C/W max).

CA

Plated

C2

MAAPSM0008

V 1.1

Vias

Specifications subject to change without notice.

n North America: Tel. [phone], Fax [phone]
n Asia/Pacific: Tel.[phone], Fax [phone]
n Europe: Tel. [phone], Fax[phone]

Visit www.macom.com for additional data sheets and product information.

3

1-Watt, 5 GHz Power Amplifier

Output Power

(dBm)

FREQUENCY (GHz

)

Output Power (

dBm)

PAE (%)

16 18 20 22 24

FREQUENCY (GHz)

12

22

FREQUENCY (GHz)

Typical Performance Curves

MAAPSM0008

V 1.1

GAIN (dB)

Gain Vs. Frequency

PIN = + 6 dBm, VDD = 7 V

14
12
10

4.0

4.5

5.0

5.5

Output Power Vs. Frequency

PIN = + 12 dBm, VDD = 7 V

32

30

28

- 25 deg. C

50 deg. C

70 deg. C

6.0

6.5

Gain Vs. Frequency

PIN = + 6 dBm, VDD = 5 V

24

20
18
16

GAIN (dB)

14

10

4.0

4.5

5.0

Output Power Vs. Frequency

PIN = + 12 dBm, VDD = 5 V

32

30

28

5.5

- 25 deg. C

50 deg. C

70 deg. C

6.0

6.5

26

24

4.0

4.5

5.0

5.5

- 25 deg. C

50 deg. C

70 deg. C

6.0

6.5

PAE Vs. Frequency

PIN = + 12 dBm, VDD = 7 V

45

40

35

PAE (%)

30

25

4.0

Specifications subject to change without notice.

n North America: Tel. [phone], Fax [phone]
n Asia/Pacific: Tel.[phone], Fax [phone]
n Europe: Tel. [phone], Fax[phone]

Visit www.macom.com for additional data sheets and product information.

4.5

5.0

FREQUENCY (GHz)

5.5

- 25 deg. C

50 deg. C

70 deg. C

6.0

6.5

26

24

4.0

4.5

5.0

FREQUENCY (GHz)

5.5

- 25 deg. C

6.5

50 deg. C

70 deg. C

6.0

PAE Vs. Frequency

PIN = + 12 dBm, VDD = 5 V

45

40

35

30

25

4.0

4.5

5.0

FREQUENCY (GHz)

5.5

- 25 deg. C

50 deg. C

70 deg. C

6.0

6.5

4

1-Watt, 5 GHz Power Amplifier

Typical Performance Curves

MAAPSM0008

V 1.1

Input Return Loss Vs. Frequency

PIN = + 12 dBm, VDD = 7 V

-3

-6

-9

-12

-15

-18

-21

RETURN LOSS (dB)

-24

-27

4.0 4.5 5.0 5.5 6.0 6.5

FREQUENCY (GHz)

Dissipated Power vs. Case
Temperature

P

vs Channel Temperature (Tc)

Diss

4.5
4

3.5
3

2.5

(W)

2

Diss

P

1.5
1

0.5
0

0 25 50 75 100 125 150 175

Tc (C)

- 25 deg. C

50 deg. C

70 deg. C

Input Return Loss Vs. Frequency

PIN = + 12 dBm, VDD = 5 V

-3

-6

-9

-12

-15

-18

-21

RETURN LOSS (dB)

-24

-27

4.0 4.5 5.0 5.5 6.0 6.5

FREQUENCY (GHz)

- 25 deg. C

50 deg. C

70 deg. C

Output Power & Gain Vs. Input Power

Freq = 5.80 GHz, VDD = 7 V

35

30

25

20

Pout (dBm), Gain (dB)

15

1 3 5 7 9 11 13 15

Pin (dBm)

Pout

Gain

1-dB Compression Vs. Frequency

VDD = 7 V, IDq = 0.360 A

32

30

28

P1dB (dBm)

26

24

5.0 5.2 5.4 5.6 5.8 6.0

Pin (dBm)

Specifications subject to change without notice.

n North America: Tel. [phone], Fax [phone]
n Asia/Pacific: Tel.[phone], Fax [phone]
n Europe: Tel. [phone], Fax[phone]

Visit www.macom.com for additional data sheets and product information.

P1dB

P1dB, Gain Vs. Quiescent Bias

VDD = 7 V, Freq = 5.8 GHz

32
30
28
26
24
22
20

Gain (dB), P1dB (dBm)

18

0.20 0.22 0.24 0.26 0.28 0.30 0.32 0.34 0.36

IDQ (A)

P1dB

Gain

5

1-Watt, 5 GHz Power Amplifier

4- mm FQFP-N, 16-Lead (MLP)
Package, Saw Singulated

MAAPSM0008

V 1.1

E

3 x e

D

16

1
2

3
4

A

A2

A1

PIN #1

16 x b

IDENTIFIER

D2

e

E2

L

Dim

Min. Nom. Max.

A 0.80 0.90 1.00
A1 0 0.02 0.05
A2 0.80 0.88 1.00

b 0.23 0.30 0.38

D - 4.00 basic -

D2 2.05 2.15 2.25

e 0.65 basic

E - 4.00 basic ­E2 2.05 2.15 2.25

L 0.45 typ. 0.55 typ. 0.65 typ.

Note: See JEDEC MO -220A VGGC Issue B for additional

dimensional and tolerance information.

Measurement (mm)

e

3 x e

Handling Procedures

Please observe the following precautions to avoid
damage to the MAAPSM0008:

Static Sensitivity

Gallium arsenide integrated circuits are ESD sensitive
and can be damaged by static electricity. Use proper
ESD precautions when handling these devices.

Specifications subject to change without notice.

n North America: Tel. [phone], Fax [phone]
n Asia/Pacific: Tel.[phone], Fax [phone]
n Europe: Tel. [phone], Fax[phone]

Visit www.macom.com for additional data sheets and product information.

Absolute Maximum Ratings1

Parameter Absolute Maximum

Max Input Power (5 - 6 GHz)
Operating Voltages +10 volts
Operating Temperature
Channel Temperature
Storage Temperature -40 °C to +150 °C

1. E xceeding any one or combination of these limits may cause
permanent damage.

+ 15 dBm

-40 °C to +70 °C
+150 °C

6