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Schottky Barrier Diodes (SBD)
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
W.F.Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 100 mA
I
R
= 100 mA
R
L
= 100 Ω
10%
Input Pulse Output Pulse
I
rr
= 10 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
MA4X746
Silicon epitaxial planar type
For super-high speed switching circuit
For small current rectification
Unit : mm
+ 0.2
2.8
− 0.3
+ 0.25
1.5
0.65 ± 0.15 0.65 ± 0.15
− 0.05
■ Features
•
I
= 200 mA, and VR > 50 V is achieved
F(AV)
•
Allowing automatic insertion with the emboss taping
•
Optimum for high-frequency rectification because of its short
reverse recovery time (t
•
High rectification efficiency caused by its low forward-risevoltage (V
)
F
)
rr
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Repetitive peak reverse voltage
Non repetitive peak
forward current
Peak forward
current
Average forward
current
2
*
Single I
1
*
Double
Single I
1
*
Double
Single I
1
*
Double
Junction temperature T
Storage temperature T
V
F(AV)
R
RRM
FSM
FM
j
stg
Note) *1: Value per chip
*2: The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)
50 V
50 V
1A
0.75
300 mA
225
200 mA
150
150 °C
−55 to +150 °C
4
0.950.95
+ 0.2
− 0.05
2.9
1.9 ± 0.2
3
+ 0.2
− 0.1
0.8
1.1
0.1 to 0.3
0.4 ± 0.2
Mini Type Package (4-pin)
Marking Symbol: M3M
Internal Connection
4
3
0.5 R
+ 0.1
− 0.05
0.4
0 to 0.1
0.5
1
2
+ 0.1
− 0.05
1
1.45
0.4
2
− 0
+ 0.1
0.2
0.6
− 0.06
+ 0.1
0.16
1 : Cathode 1
2 : Cathode 2
3 : Anode 2
4 : Anode 1
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
Forward voltage (DC) V
R
F1
V
F2
Terminal capacitance C
Reverse recovery time
*
t
rr
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 000 MHz
3. * : trr measuring instrument
VR = 50 V 200 µA
IF = 30 mA 0.36 V
IF = 200 mA 0.55 V
VR = 0 V, f = 1 MHz 30 pF
t
IF = IR = 100 mA 3.0 ns
Irr = 10 mA, RL = 100 Ω
1
Page 2
MA4X746
Schottky Barrier Diodes (SBD)
IF V
3
10
2
10
Ta = 150°C
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
0 0.1 0.2 0.3 0.4 0.5 0.6
F
100°C
25°C
Forward voltage VF (V
Ct V
30
25
)
pF
(
t
20
15
10
Terminal capacitance C
5
R
− 20°C
)
f = 1 MHz
= 25°C
T
a
VF T
0.5
0.4
)
V
(
F
0.3
0.2
Forward voltage V
0.1
0
−40 0 40 80 120 160 200
a
IF = 200 mA
Ambient temperature Ta (°C
IR T
5
10
4
10
)
µA
(
R
3
10
2
10
Reverse current I
10
VR = 30 V
a
5 V
100 mA
30 mA
IR V
5
10
Ta = 150°C
4
10
)
µA
(
R
3
10
2
10
Reverse current I
10
1
0 102030405060
)
Reverse voltage VR (V
R
100°C
25°C
)
0
0 102030405060
Reverse voltage VR (V
2
1
)
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
)
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