Page 1
Switching Diodes
MA4X193
Silicon epitaxial planar type
Silicon epitaxial planar type
Unit : mm
+ 0.2
2.8
− 0.3
+ 0.25
0.65 ± 0.15 0.65 ± 0.15
1.5
− 0.05
■ Features
•
Mini type 4-pin package, contained four elements
•
Short reverse recovery time t
•
Bridge diodes for surface mounting
•
Anode common + cathode common composite product
rr
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Repetitive peak reverse voltage
V
Average forward current I
Repetitive peak forward current
I
Non-repetitive peak forward I
surge current
*
Junction temperature T
Storage temperature T
R
RRM
F(AV)
FRM
FSM
j
stg
80 V
80 V
70 mA
150 mA
250 mA
150 °C
−55 to +150 °C
Note) * : t = 1 s
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
R
Forward voltage (DC) V
Reverse voltage (DC) V
Terminal capacitance C
Reverse recovery time
*
t
rr
Note) 1. Rated input/output frequency: 100 MHz
2. * : trr measuring circuit
VR = 75 V 100 nA
IF = 70 mA 1.2 V
F
IR = 100 µA80V
R
VR = 0 V, f = 1 MHz 15 pF
t
IF = 10 mA, VR = 6 V 10 ns
Irr = 0.1 · IR, RL = 100 Ω
0.5 R
4
0.950.95
− 0.05
+ 0.2
2.9
1.9 ± 0.2
3
− 0.1
+ 0.2
0.8
1.1
0.1 to 0.3
0.4 ± 0.2
1: Cathode 1 3: Anode 3
Anode 2 Cathode 4
2: Cathode 2, 3 4: Anode 1, 4
Mini Type Package (4-pin)
Marking Symbol: M2Z
Internal Connection
4
3
+ 0.1
− 0.05
0.4
0 to 0.1
− 0.05
+ 0.1
1
1.45
0.4
0.5
2
− 0
+ 0.1
0.2
0.6
− 0.06
+ 0.1
0.16
1
2
Bias Application Unit N-50BU
Pulse Generator
(PG-10N)
= 50 Ω
R
s
A
W.F.Analyzer
(SAS-8130)
= 50 Ω
R
i
Input Pulse Output Pulse
t
t
p
r
t
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
I
F
= 10 mA
I
F
= 6 V
V
R
= 100 Ω
R
L
t
rr
Irr = 0.1 · I
t
R
1
Page 2
MA4X193
4-1 and 4-3 pins (anode common) characteristics charts
Switching Diodes
IF V
3
10
2
10
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
0 0.2 0.4 0.6 0.8 1.0 1.2
F
Ta = 150°C
Forward voltage VF (V
T
4
10
3
10
)
nA
(
R
2
10
10
Reverse current I
1
−1
10
−40 0 40 80 120 160 200
a
VR = 75 V
Ambient temperature Ta
100°C
25°C
− 20°C
)
35 V
6 V
(°C)
IR V
4
10
3
10
)
nA
(
R
2
10
10
Reverse current I
1
−1
10
0 20406080100120
R
Ta = 150°C
100°C
25°C
Reverse voltage VR (V
Ct V
8
7
)
pF
6
(
t
5
4
3
2
Terminal capacitance C
1
0
0 20406080100120
R IR
f = 1 MHz
T
a
Reverse voltage VR (V
)
= 25°C
)
VF T
1.6
1.4
)
1.2
V
(
F
1.0
0.8
0.6
0.4
Forward voltage V
0.2
0
−40 0 40 80 120 160 200
a
IF = 100 mA
Ambient temperature Ta (°C
I
t
1 000
300
)
A
(
100
F(surge)
30
10
3
1
Forward surge current I
0.3
0.1
0.03
F (surge)
0.3 3 301010.1
W
Ta = 25°C
t
Non repetitive
Pulse width tW (ms
10 mA
3 mA
)
I
F(surge)
W
)
2
Page 3
Switching Diodes
1-2 and 3-2 pins (cathode common) characteristics charts
MA4X193
IF V
3
10
2
10
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
0 0.2 0.4 0.6 0.8 1.0 1.2
F
Ta = 150°C
Forward voltage VF (V
T
5
10
4
10
)
nA
(
R
3
10
2
10
Reverse current I
10
1
−40 0 40 80 120 160 200
a
VR = 75 V
Ambient temperature Ta (°C
100°C
25°C
− 20°C
)
35 V
6 V
IR V
Ct V
R
Ta = 150°C
100°C
25°C
R IR
f = 1 MHz
T
= 25°C
a
1.6
1.4
)
1.2
V
(
F
1.0
0.8
0.6
0.4
Forward voltage V
0.2
0
)
−40 0 40 80 120 160 200
1 000
300
)
A
(
100
F(surge)
30
10
3
1
Forward surge current I
0.3
0.1
0.03
)
5
10
4
10
)
nA
(
R
3
10
2
10
Reverse current I
10
1
0 20406080100120
Reverse voltage VR (V
1.2
1.0
)
pF
(
t
0.8
0.6
0.4
Terminal capacitance C
0.2
0
)
0 20406080100120
Reverse voltage VR (V
VF T
a
IF = 100 mA
10 mA
3 mA
Ambient temperature Ta (°C
I
t
F (surge)
0.3 3 301010.1
Pulse width tW (ms
W
Ta = 25°C
I
F(surge)
t
W
Non repetitive
)
)
3
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