Page 1
Switching Diodes
MA4X160A
Silicon epitaxial planar type
For switching circuits
■ Features
•
Two isolated elements contained in one package, allowing highdensity mounting
•
Centrosymmetrical wiring, allowing to free from the taping
direction
•
Short reverse recovery time t
•
Small terminal capacitance, C
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Repetitive peak reverse voltage V
Reverse voltage Single I
(DC) Double I
Repetitive peak
forward current
Non-repetitive peak
forward surge current
Junction temperature T
Storage temperature T
Note) * : t = 1 s
Single I
Double I
Single I
*
Double I
rr
t
R
RRM
F(AV)
F(AV)
FRM
FRM
FSM
FSM
j
stg
80 V
80 V
100 mA
75 mA/Unit
225 mA
170 mA/Unit
500 mA
375 mA/Unit
150 °C
−55 to +150 °C
2.8
0.65 ± 0.15 0.65 ± 0.15
+ 0.2
− 0.05
2.9
1.9 ± 0.2
+ 0.2
− 0.1
1.1
0.1 to 0.3
0.4 ± 0.2
1.5
4
0.950.95
3
0.8
Mini Type Package (4-pin)
Marking Symbol: M1E
Internal Connection
4 1
32
+ 0.25
− 0.05
+ 0.2
− 0.3
0.5 R
+ 0.1
− 0.05
0.4
0 to 0.1
Unit : mm
+ 0.1
− 0.05
1
0.4
0.5
2
+ 0.1
0.2
+ 0.1
− 0.06
0.16
1 : Cathode 1
2 : Anode 2
3 : Cathode 2
4 : Anode 1
1.45
− 0
0.6
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
Forward voltage (DC) V
Reverse voltage (DC) V
Terminal capacitance C
Reverse recovery time
*
Note) 1. Rated input/output frequency: 100 MHz
2. * : trr measuring circuit
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
R
F
R
t
t
rr
W.F.Analyzer
(SAS-8130)
= 50 Ω
R
i
VR = 75 V 0.1 µA
IF = 100 mA 0.95 1.2 V
IR = 100 µA80V
VR = 0 V, f = 1 MHz 0.9 2 pF
IF = 10 mA, VR = 6 V 3 ns
Irr = 0.1 · IR, RL = 100 Ω
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
t
= 10 mA
I
F
= 6 V
V
R
= 100 Ω
R
L
rr
I
= 0.1 · I
rr
t
R
I
F
1
Page 2
MA4X160A
Switching Diodes
IF V
3
10
2
10
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
0 0.2 0.4 0.6 0.8 1.0 1.2
F
Forward voltage VF (V
IF T
2
10
10
)
mA
(
F
1
−1
10
Forward current I
−2
10
−3
10
0 40 80 120 160−40
VR = 80 V 40 V
a
Ambient temperature Ta (°C
Ta = 125°C
75°C
25°C
− 20°C
)
IR V
Ct V
R
R
f = 1 MHz
T
= 25°C
a
)
1.2
1.0
)
V
(
0.8
F
0.6
0.4
Forward voltage V
0.2
0
−40 0 40 80 120 160
)
1 000
300
)
A
(
100
F(surge)
30
10
3
1
Forward surge current I
0.3
0.1
0.03
2
10
10
)
µA
(
Reverse current I
Ta = 125°C
R
1
−1
10
−2
10
−3
10
75°C
25°C
0 20406080100120
Reverse voltage VR (V
10
5
)
pF
(
3
t
2
1
0.5
0.3
Terminal capacitance C
0.2
0.1
0 102030405060
)
Reverse voltage VR (V
VF T
a
IF = 100 mA
10 mA
3 mA
1 mA
0.1 mA
Ambient temperature Ta (°C
I
t
F(surge)
0.3 3 301010.1
Pulse width tW (ms
W
Ta = 25°C
I
F(surge)
t
W
Non repetitive
)
)
2
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