M/A-COM’s MA4M series of MNS (metal-nitride-silicon) silicon chip capacitors is designed specifically for high reliability and
repeatable performance in microwave circuit ap plications . These
capacitors are made using a low press ure chemical vapor depos ition (LPCVD) that results in dense, uniform nitride layers. These
capacitors exhibit higher capacitance per unit area (resulting in
smaller chip size) than similar MOS, MIS and ceramic capacitors.
Evaporated gold contacts are used t o provide an easily bondable
metal pad on the capacitor chip. M/A-COM MNS capacitors have
shown no measurable capacitance change when subjected to the
rated standoff voltage of 150ºC.
The MA4M series of chip capacitors is an excellent choice for use
in hybrid microwave circuits up through Ku-band, where low
loss, high reliability, small size and temperature stability are
prime concerns.
Case Style
350
These chip capacitors are suited for applications requiring DC
blocks, coupling capacitors, bypass capacitors, capacitive loads
and tuning elements in oscillators, multipliers and filters.
Comparison of M/A-COM MNS Capacitors to Ceramic Chip Capacitors
Characteristics ComparedMNSCeramic
Operating Temperature Range-55 to +200°C-55 to +125°C
Temperature Coefficient180 PPM1000 PPM
Insertion Loss of a 20 pF Capacitor in a 50 Ω line at 15 GHz
Chip Size
200 pF, 100V40 x 40 mils70 x 70 mils
20 pF, 100V22 x 22 mils50 x 50 mils
Notes:
1 5% capacitance tolerance is available on request.
2 Other capacitance and standoff voltage values are av ai la ble o n re ques t.
3 Capacitance is mea s u r ed a t 1 MHz.
4 Temperature coeffic i ent o f capacitance is nominally 180 PPM/°C.
5 Device failure may occur if standoff voltage ratio is exceeded.
MA4M230030020026345.0
MA4M160060010026348.0
Maximum Ratings
Applied Voltage
Operating Temperature
Storage Temperature
Specified standoff voltage
-55°C to +200°C
-55°C to +200°C
TYPICAL CAPACITANCE CHANGE FOR MNS and
CERAMIC CAPACITOR vs TEMPERATURE
(200 pF CAPACITOR)
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
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MNS Microwave Chip CapacitorsMA4M Series
p
Bonding and Handling Considerations for
MNS Chi
Capacitors
Handling
Normal precautions that are common to the handling of hybrid
semiconductors also apply to MNS chip capacitors. Removal of
chips from waffle packs and subsequent handling should be
done with a vacuum pencil. Pencils equipped with either metallic or nonmetallic tips are acceptable.
Surface Preparation
Each MNS chip and substrate should be free of oils and other
surface contamination. Such contaminants may result in poor
solder wetting. Cleansing can be done with acetone, alcohol,
freon, TMS or other common microelectronic solvents. Burnishing of MNS capacitor chips is not necessary or recommended.
Solder
Soldering temperatures up to 300ºC are acceptable for a duration
not greater than 5 seconds for MNS chip capacitors. Any of the
common tin-lead-silver, lead-indium, or higher temperature gold
alloy solders are acceptable provided that the 300ºC temperature
is not exceeded. Pure tin or tin-antimony solders are not
recommended. Cleaning of residual flux is required and can be
accomplished with a fluorinated or chlorinated solvent.
Conductive Epoxy
Any of the conductive epoxies that are available for semiconductor die attachment are acceptable for MNS chip capacitor
attachment. Follow the manufacturer’s recommendations for
mixing and application carefully. Take care to seat the capacitor
on the substrate using a soft implement.
Lead Bonding
Ball, ultrasonic, TC or pulse bonding of the wire or ribbon leads
are all acceptable methods . Temperature for the pulse bon der
should not exceed 300ºC. Maximum pressure applied to the
MNS capacitor chips should not exceed 25 grams for any of the
methods used. Proper procedure will result in bond strength that
exceeds MIL-STD-883B Method 2011.2 for gold wire or gold
ribbon.