Datasheet MA4E2054-1141T, MA4E2054E-1068T, MA4E2054D-287T, MA4E2054D-1146T, MA4E2054C-287T Datasheet (M A COM)

Surface Mount Low Barrier
X-Band Schottky Diode

MA4E2054 Series

Features

• Low IR (<100nA @ 1V, <500nA @ 3V)

• Designed for High Volume, Low Cost Detector and Mixer

Applications

• Low Noise Figure: 5.7 dB (SSB) at X-Band

• High Detector Sensitivity: -55 dBm TSS

• Low Capacitance: 0.30 pF

• Low 1/F Noise

• Single, Series Pair, and Unconnected Pair Configurations

• Available in four package styles

• Tape and Reel

Description

The MA4E2054 series are low barrier n-type silicon Schottky
diodes assembled in low cost surface mount plastic packages.
They are designed for use as high performance mixer and
detector diodes at frequencies from VHF through low Ku band.

The MA4E2054-1141T (SOD-323), and the MA4E2054A and
the MA4E2054C (available in both the SOT-23 and SOT-323
packages) are single element Schottky diodes characterized for
use as single ended mixers and detectors. The MA4E2054B and
MA4E2054D (available in both the SOT-23 and SOT-323
packages) incorporate two Schottky chips in series pair
configurations. The MA4E2054E-1068T consists of two
Schottky chips in the SOT-143 package in an unconnected pair
configuration. These diodes are useful for balanced mixer and
detector voltage doubler circuits. Applications for the
MA4E2054 series include VSAT and DBS mixers. The small
diode package size and low cost make them attractive for use in
RF tag applications for identification and toll collection.

The part number consists of the base chip (MA4E2054),
followed by the wiring configuration (A, B, C, D, E, omit for
SOD-323), the package style (287, 1068, 1141, 1146) and a “T”
for tape and reel.

The MA4E2054-1141T is available only in the SOD-323
package style. The MA4E2054A , B, C, D are available in both
the SOT-23 and SOT-323 package styles. The MA4E2054E is
available only in the SOT-143 package style.

Package Outlines

SOT-23 (287)

SOT-323 (1146)

Configurations

3

12

SINGLE

MA4E2054A-287T

MA4E2054A-1146T

3

12

SINGLE

MA4E2054C-287T

MA4E2054C-1146T

SOT-143 (1068)

SOD-323 (1141)

TOP VIEW

SERIES PAIR

MA4E2054B-287T

MA4E2054B-1146T

MA4E2054D-287T

MA4E2054D-1146T

3

12

3

12

SERIES PAIR

4

3

Specifications subject to change without notice.

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1

SINGLE

MA4E2054-1141T

2

12

UNCONNECTED PAIR

MA4E2054E-1068T

V 4.0

1

Surface Mount Low Barrier X-Band Schottky Diodes

MA4E2054 Series

Maximum Ratings

Parameter Unit Values

Operating Temperature ºC -65 to +125
Storage Temperature ºC -65 to +125
Incident RF Power (CW) mW 75

1

Reverse Voltage @ 25ºC V 3
Forward Current mA 20
Soldering Temperature ºC +260 for 5 sec.

1. At 25°C junction temperature. Derate linearly to zero watts at 125°C case temperature.

Electrical Specifications @ +25°C

Parameter Condition Symbol Specification

Breakdo wn Voltage IR = 10 mA V
Reverse Leakage Current VR = 1 V I
Reverse Leakage Current VR = 3 V I
Total Capacitance VR = 0 V C

Dynamic Resistance

2

IF = 10 mA R

Forward Voltage IF = 1 mA V
Forward Voltage Difference

1. Applies to MA4E2054B, MA4E2054D and MA4E2054E configurations.
= RS + RJ where RJ =

2. R

D

1

26

(in mA)

I

F

IF = 1 mA

∆V

B

R

R

T

D

F

F

3.0 V min.
100 nA max.
500 nA max.

0.30 pF max.

17 Ohms max.

250 mV min.

20 mV max.

Typical RF Performance @ +25°C

Parameter Conditions Typical Value

Mixer Noise Figure
IF Impedance IF = 30 MHz 200 ohms

Tangential Signal
Sensitivity

2

Detector Output
Voltage at -30 dBm

Detector Output RL = 1M Ohm 20 mV

1. Fixture tuned to 9.375 GHz.

2. Fixture tuned to 2.5 GHz. See figures on page 3 for untuned fixture performance.

1

f = 9.375 GHz 5.7 dB (SSB)

IF = 20 mA

-55 dBm

BW = 2 MHz

2

RL = 100K Ohms

= 20 µA

I

F

20 mV

Spice Model Parameters

IS = 3 x 10-8 A M = 0.50

RS = 11Ω

N = 1.05 BV = 5.0 V
TT = 0 S IBV = 1 x 10 -5 A

Cj(0) = 0.10 x 10 -12 pF
Cpar = 0.11 x 10 -12 pF

VJ = 0.40 V

EG = 0.69 eV

Specifications subject to change without notice.

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V 4.0

2

Surface Mount Low Barrier X-Band Schottky Diodes

Circuit Models

MA4E2054 Series

SOT-23

1

.13 pf

2

.13 pf .01 pf

SOT-323

1

.04 pf

2

.04 pf .06 pf

.6 nH

.6 nH

.65 nH

.65 nH

.06 pf

.01 pf

.05 pf

.05 pf

.05 pf

.05 pf

.7 nH

.013 pf .015 pf

.6 nH

.06 pf .04 pf

SOT-143

C

L

1

BW

1

3

2

Lg

MM

L

1

C

1

7

Cp

2

Cp

3

Cp

4

L

BW

8

C

1

LBW = 0.08nH, Lg = 0.36nh, L1 = 0.31nH, M = 0.12nH, C1 = 0.01pF,
Cp1 = 0.05pF, CP2 = 0.10pF, Cp3 = 0.05pF, Cp4 = 0.03pF

C

1

6

L

1

Cp

1

L

5

1

C

1

C

1

4

3

C

1

SOD-323

.05 pf

1

.2 pf

3

.47 nH

.02 pf

.47 nH

.02 pf .2 pf

2

Typical Performance Curves @ 25°C

(MA4E2054-287T)

Detector Output Voltage vs Frequency and
Load Resistance at -30 dBm. Diode Forward
Biased at 20µµµµA. Untuned Fixture (50ΩΩΩΩ)

10

(mV)

1

OUT

V

- - - - - - 1M o h m

________

100k ohms

0.1
024681012

FREQUENCY (GHz)

Specifications subject to change without notice.

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__ __ __

__ . . __ . .

10k ohms

5k ohm s

Detector Output Voltage vs Input Power and
Load Resistance. Diode Forward Biased at
20µµµµA. Untuned Fixture at 9.375 GHz

10000

1000

100

(mV)

10

OUT

V

1

0.1

0.01

-50 -40 -30 -20 -10 0 10 20
INPUT POW ER (dBm)

- - - - - - 10 k ohm s

________

1M ohm

__ __ __

5k ohms

V 4.0

3

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Surface Mount Low Barrier X-Band Schottky Diodes

MA4E2054 Series

Typical Performance Curves @ 25°C (Cont’d)

Detector Output Voltage vs Frequency and
Load Resistance at -30 dBm. Diode at Zero
Bias. Untuned Fixture (50ΩΩΩΩ)

10

- - - - - - 1M ohm

1

(mV)

OUT

V

0.1

0.01
024681012

________

Forward Current vs Forward Voltage
and Temperature

10

1

(mA)

F

I

0.1

0.01
0 50 100 150 200 250 300 350 400 450 500

+125oC

25oC

__ __ __

100k ohms

FREQUENCY (GHz)

V

-50oC

(mV )

F

10k ohms

__ . . __ . .

5k ohms

(MA4E2054-287T)

Detector Output Voltage vs Input Power and
Load Resistance. Diode at Zero Bias. Untuned
Fixture at 9.375 GHz (50ΩΩΩΩ)

10000

1000

100

(mV)

10

OUT

V

1

0.1

0.01

-40 - 3 0 -2 0 -10 0 10

Tuned Fixture

9

8

7

6

5

NOISE FIGURE (dB)

4

3

0.01 0.1 1 10

________

INPUT PO W E R (dBm)

LO POWER (mW)

- - - - - - 1M ohm
100k ohms

__ __ __

10 k ohm s

__ . . _ _ . .

5k ohms

Typical Scattering Parameters (S11)

MA4E2054A (packaged in SOT-23), Using a 50 Ohm Intercontinental Test Fixture (no DC bias)

Freq. -30 dBm -3 dBm 0 dBm

GHz MAG PHASE MAG PHASE MAG PHASE MAG PHASE

0.50 0.993 -7.6 0.812 -7.0 0.597 -4.6 0.387 -0.9

1.00 0.994 -15.1 0.843 -14.7 0.632 -13.9 0.411 -11.3

1.50 0.993 -21.4 0.807 -21.7 0.596 -22.3 0.386 -22.4

2.00 0.997 -27.1 0.791 -26.0 0.580 -23.1 0.383 -16.4

2.50 0.994 -33.2 0.795 -31.5 0.579 -27.6 0.378 -18.5

3.00 0.994 -41.3 0.755 -42.7 0.548 -45.2 0.342 -48.6

3.50 0.992 -48.6 0.727 -52.2 0.524 -55.8 0.318 -60.8

4.00 0.997 -56.5 0.713 -58.9 0.502 -59.5 0.296 -56.3

4.50 0.987 -66.4 0.696 -67.1 0.464 -67.7 0.235 -62.6

5.00 0.971 -74.7 0.634 -79.8 0.386 -86.2 0.167 -94.9

5.50 0.965 -83.1 0.614 -88.6 0.354 -91.4 0.131 -98.7

6.00 0.980 -96.0 0.547 -103.5 0.292 -107.0 0.072 -117.2

6.50 0.974 -110.3 0.514 -120.1 0.248 -129.5 0.041 163.9

7.00 0.941 -123.7 0.450 -137.4 0.235 -150.8 0.070 145.2

7.50 0.957 -138.9 0.430 -158.1 0.247 178.0 0.152 120.6

8.00 0.969 -155.6 0.404 -178.8 0.260 150.1 0.218 102.5

8.50 0.933 -171.5 0.405 162.2 0.294 129.9 0.278 92.0

9.00 0.932 170.9 0.391 143.1 0.310 110.8 0.344 84.4

9.50 0.943 152.8 0.410 128.2 0.318 97.9 0.343 68.7

10.00 0.931 132.2 0.504 108.9 0.394 83.3 0.399 56.9

3 dBm

Specifications subject to change without notice.

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V 4.0

4

Surface Mount Low Barrier X-Band Schottky Diodes

Impedance Plot

MA4E2054A (packaged in SOT-23)
Using a 50 Ohm Intercontinental Test Fixture (no DC bias)

-30 dBm

MA4E2054 Series

Case Styles

-3 dBm

0 dBm

Fstop=12.5 GHz

+3 dBm

Fstart=0.5 GHz

SOT-23 SOT-23 (Case 287)

INCHES MILLIMETERS

F

D

G

L

H

J

Specifications subject to change without notice.

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A

M

C

DIM.

A
B

N

C
D 0.013 0.020 0.35 0.50
E 0.003 0.006 0.08 0.15

B

K

F 0.110 0.119 2.80 3.00
G 0.047 0.056 1.20 1.40
H 0.037 typical 0.95 typical

E

J 0.075 typical
K
L

DIM. GRADIENT

M 10° max.

N 2° . . .30°

MIN. MAX. MIN. MAX.








0.048

0.008

0.040

0.103

0.024

1

Note:

1. Applicable on all sides





1.90 typical




1.22

0.20

1.00

2.60

0.60

V 4.0

5

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Surface Mount Low Barrier X-Band Schottky Diodes

Case Styles

SOT-143 SOT-143 (Case 1068)

INCHES MILLIMETERS

DIM.

G

P

J

A

A
B

C
D 0.030 0.035 0.75 0.90

N

H

M

E

D

K

B

L

F

C

E 0.013 0.020 0.35 0.50
F 0.003 0.006 0.08 0.15

G 0.110 0.119 2.80 3.00
H 0.047 0.056 1.20 1.40

J 0.075 typical 1.90 typical
K 0.075 typical
L

M

MIN. MAX. MIN. MAX.








0.044

0.044

0.040

0.103

0.024

MA4E2054 Series





1.90 typical




1.10

1.10

1.00

2.6

0.6

DIM. GRADIENT

N 10° max.

1

P 2° . . .30°

SOT-323 SOT-323 (Case 1146)

A

E

C

D

J

B

H

10°

MAX.

G

F

INCHES

DIM.

MIN. MAX. MIN. MAX.

A 0.063 0.087 1.6 2.2
B 0.045 0.053 1.15 1.35
C 0.079 0.087 2.0 2.2
D 0.047 0.055 1.2 1.4
E 0.008 0.016 0.2 0.4

F 0.031 0.039 0.8 1.0

G



H 0.003 0.006 0.08 0.15

J 0.004 0.010 0.1 0.25

SOD-323 SOD-323 (Case 1141)

INCHES

F

G

C

E

D

DIM.

A
B
C
D 0.010 0.016 0.25 0.4
E 0.003 0.006 0.08 0.15

H

B

A

F 0.063 0.075 1.6 1.9
G 0.045 0.057 1.15 1.45
H 0.091 0.106 2.3 2.7

MIN. MAX. MIN. MAX.





Note:

1. Applicable on all sides

MILLIMETERS

0.004



MILLIMETERS

0.043

0.004

0.008





0.1

1.1

0.1

0.2

Specifications subject to change without notice.

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V 4.0

6

Low Barrier Schottky
Single Junction Chip

MA4E2054 Series

Features

• Low IR (<100 nA @ 1V, <500 nA @ 3V)

• Designed for High Volume, Low Cost Detector and Mixer

Applications

• Low Noise Figure: 5.7 dB (SSB) at X-Band

• High Detector Sensitivity: -55 dBm TSS

• Low Capacitance: 0.13 pF

• Low 1/F Noise

Description

The MA4E2054 diode is a low barrier, n-type, silicon Schottky
device. It is useful as a high performance mixer or detector
diode at frequencies from VHF through X-band. The 0.004­inch diameter gold bond pads and sturdy construction allow you
to use these chips in automatic assembly processes.

Maximum Ratings

Parameter Symbol Unit Values

Operating Temperature T

Storage Temperature T

Incident RF Power (CW) P
Reverse Voltage @ 25ºC V
Forward Current @ 25°C I

1. At 25°C die temperature. Derate linearly to zero watts at 150°C.

OP

STG

T

R

F

ºC -65 to
ºC -65 to

mW 75

V 3

mA 20

1

Package Outlines

MA4E2054

0.014”

Typ.

0.014”

0.36

Typ.

0.10

Typ.

0.014”

inches

mm

Electrical Specifications @ +25°C

Parameter Condition Symbol Specification

Breakdown Voltage IR = 10 µA V
Reverse Leakage

Current
Reverse Leakage
Current
Total Capacitance VR = 0

Dynamic
Resistance
Forward Voltage IF = 1 mA V

1. RD = RS + RJ where RJ =

Specifications subject to change without notice.

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1

VR = 1 V I
VR = 3 V I

f = 1 MHz

IF = 10 mA R

26

(in mA)

I

F

B

R

R

C

T

D

F

3.0 V min.

100 nA max.
500 nA max.

0.13 pF max.

17 Ohms max.

250 mV min.

350 mV max.

Typical RF Performance @ +25°C

SOT-23 Package

Parameter Conditions Typical Value

Mixer Noise Figure

IF Impedance IF = 30 MHz 200 ohms
Tangential Signal
Sensitivity

Detector Output
Voltage at -30 dBm
Detector Output
Voltage at -30 dBm

2

1

2

2

f = 9.375 GHz

LO = 0 dBm

IF = 20 µA

BW = 2 MHz

Video NF = 1.5 dB

RL = 100K Ohms

I

= 20 µA

F

RL = 1M Ohm

Zero Bias

5.7 dB (SSB)

-55 dBm

20 mV

20 mV

V 4.0

7

Low Barrier Schottky Si ngle Junct ion Chip

Circuit Model (Chip) Spice Model Parameters

0.06 pF

R

S

11

ΩΩΩΩ

R

J

Recommended Assembly

IS = 3 x 10-8 A M = 0.50

RS = 11Ω

N = 1.05 BV = 5.0 V
TT = 0 S IBV = 1 x 10 -5 A

Cj(0) = 0.10 x 10 -12 pF

VJ = 0.40 V

MA4E2054 Series

EG = 0.69 eV

0.04 pF

Typical Performance Curves @ +25°C

(Packaged in SOT-23)

Forward Current vs Forward Voltage
and Temperature

10

1

(mA)

F

I

0.1

0.01
0 50 100 150 200 250 300 350 400 450 500

+125oC

25oC

V

-50oC

(mV )

F

1. One mil diameter gold wire.

2. Ball bond

3. Conductive silver epoxy for die mounting.

Detector Output Voltage vs Input Power and
Load Resistance. Diode Forward Biased at
20µA. Untuned Fixture at 9.375 GHz

10000

1000

100

(mV)

10

OUT

V

1

0.1

0.01

-50 -40 -30 -20 -10 0 10 20
INPUT POW ER (dBm)

- - - - - - 10 k ohm s

________

1M ohm

__ __ __

5k ohms

Noise Figure vs LO Power at 9.375 GHz,
Tuned Fixture

9

8

7

6

5

NOISE FIGURE (dB)

4

3

0.01 0.1 1 10

Specifications subject to change without notice.

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LO POWER (mW)

Detector Output Voltage vs Input Power and
Load Resistance. Diode at Zero Bias.
Untuned Fixture at 9.375 GHz

10000

1000

100

(mV)

10

OUT

V

1

0.1

0.01

-40 -30 -2 0 -1 0 0 10

INPUT POWER (dBm)

- - - - - - 1M ohm

________

100k ohms

__ __ __

10k ohms

__ . . __ . .

5k ohms

V 4.0

8