Datasheet MA4E1339E-1068T, MA4E1339B-287T, MA4E1339B-1146T, MA4E1339A-287T, MA4E1339A-1146T Datasheet (M A COM)

Silicon Medium Barrier

2

1

Schottky Diode

MA4E1339 Series

Features

n Medium Barrier Si Schottky Diode
n Available as Single Diode, Series Tee or

Unconnected Pair

n Surface Mount Packages
n Tape and Reel

Description

The MA4E1339 series is a silicon, medium barrier Schottky
diode suitable for use in mixer or detector circuits.

Applications

The MA4E1339 family of silicon Schottky diodes may be
used in mixer or detector circuits. The MA4E1339A-287T,
MA4E1339A-1146T, and MA4E1339A-1141T are suitable
for use in single ended mixers or single diode detectors.
The MA4E1339B-287T and MA4E1339B-1146T are
suitable for use in single balanced mixers or voltage doubler
detectors. The MA4E1339E-1068T may be used in
temperature compensated detectors, single balanced mixers
or double balanced mixers.

The MA4E1339 series of Schottky diodes is available in the
SOT-23 (case style 287), the SOT-143 (case style 1068),
the SOT-323 (case style 1146) and the SOD-323 (case style

1141) packages. These packages are supplied on tape and
reel for automatic pick and place assembly on surface
mount circuit boards, as indicated by a “T” to the case style
suffix.

Absolute Maximum Ratings
@TA = +25 °C (unless otherwise
specified)

Parameter Maximum Ratings

Reverse Voltage 20 V

Case Styles

SOT-23

SOT-323

Configurations

3

21

Single

MA4E1339A-287T

MA4E1339A-1146T

3 4

SOT-143

SOD-323

3

Series Pair

MA4E1339B-287T

MA4E1339B-1146T

Forward Current 100 mA
Surge Forward Current 500 mA
Total Power Dissipation

(TC = 25 °C)
Operating Temperature -55 °C to +125 °C

Storage Temperature -55 °C to +125 °C

250 mW

Unconnected Pair

MA4E1339E-1068T

2 1

1

Single

MA4E1339A-1141T

2

Silicon Medium Barrier Schottky Diode

1L1L1

Electrical Specifications @ TA = +25 °C

Parameters and Test Conditions Symbol Specification

Forward Voltage at IF = 1 mA V
Delta Forward Voltage at IF = 1 mA

Forward Voltage at IF = 35 mA V
Total Capacitance at VR = 0 V and f = 1 MHz C
Reverse Leakage Current at VR = 15 V I
Reverse Voltage Breakdown at IR = 10 µA V

Circuit Models

∆ V

T0
R

MA4E1339 Series

F

F

(for series pair and unconnected pair

F

b

410 mV maximum

20 mV maximum

configurations)

1.0 V maximum

1.2 pF maximum

200 nA maximum

20 V minimum

SOT-23

1

.13 pf

2

.13 pf .01 pf

.65 nH

.01 pf

.65 nH

SOT-323

1

.04 pf

2

.6 nH

.06 pf

.6 nH

.05 pf

.05 pf

.05 pf

.7 nH

.013 pf .015 pf

.6 nH

.06 pf .04 pf

SOT-143

C

LBW

1

Lg

1

3

M M

L

2

C

1

7

Cp

2

Cp

3

Cp

4

LBW

8

C

1

LBW = 0.08nH, Lg = 0.36nh, L1 = 0.31nH, M = 0.12nH, C1 = 0.01pF,
Cp1 = 0.05pF, CP2 = 0.10pF, Cp3 = 0.05pF, Cp4 = 0.03pF

C

1

6

Cp

1

5

C

1

SOD-323

1

.2 pf

3

.47 nH

.02 pf

.05 pf

.47 nH

.02 pf .2 pf

C

1

4

3

C

1

2

.04 pf .06 pf

.05 pf

Spice Model Parameters

IS = 5.1E-9 amps M = 0.5
RS = 12.5Ω
N = 1.02 BV = 20 V
IK = 4.5 mA IBV = 10 µA

CT = 0.87 pF
VJ = 0.59 V

Specifications subject to change without notice.

n North America: Tel. [phone]
n Asia/Pacific: Tel.[phone], Fax [phone]
n Europe: Tel. [phone], Fax[phone]

Visit www.macom.com for additional data sheets and product information.

FC = 0.5

2

Silicon Medium Barrier Schottky Diode

Case Styles

MA4E1339 Series

SOT-23

SOT-143

E

SOT-23 (Case Style 287)

F

D

G

L

H

J

A

M

C

N

B

K

E

INCHES MILLIMETERS

DIM.

A
B
C

MIN. MAX. MIN. MAX.





0.048

0.008

0.040





1.22

0.20

1.00
D 0.013 0.020 0.35 0.50
E 0.003 0.006 0.08 0.15
F 0.110 0.119 2.80 3.00
G 0.047 0.056 1.20 1.40
H 0.037 typical 0.95 typical
J 0.075 typical 1.90 typical
K
L




0.103

0.024

DIM. GRADIENT

M
N

Note: 1. Applicable on all

10° max.1
2° . . .30°




2.60

0.60

SOT-143 (Case Style 1068)

G

J

H

M

D

K

A

N

C

B

F

INCHES MILLIMETERS
DIM.

P

A 0.031 0.044 0.97 1.10

MIN. MAX. MIN. MAX.

B 0.001 0.005 0.03 0.13
C 0.038 ref. 0.965 ref.
D 0.013 0.020 0.33 0.51
E 0.030 0.035 0.76 0.90

L

F 0.003 0.006 0.08 0.15
G 0.105 0.120 2.7 3.10
H 0.047 0.056 1.2 1.40
J 0.075 typical 1.90 typical
K 0.065 typical

1.70 typical
L 0.083 0.103 2.11 2.62
M 0.024 ref. 0.61 ref.
N 0.006 typical

DIM. GRADIENT

P
Q

Note: 1. Applicable on all

10° max. 1
2° . . . 30°

0.15 typical

Specifications subject to change without notice.

n North America: Tel. [phone]
n Asia/Pacific: Tel.[phone], Fax [phone]
n Europe: Tel. [phone], Fax[phone]

Visit www.macom.com for additional data sheets and product information.

3

Silicon Medium Barrier Schottky Diode

MAX.

F

DHGCEAB

Case Styles (Cont’d)

MA4E1339 Series

SOT-323
Case Style 1146

A

E

C

D

SOD-323
Case Style 1141

SOT-323 (Case Style 1146)

INCHES MILLIMETERS

H

J

A 0.063 0.087 1.6 2.2
B 0.045 0.053 1.15 1.35

DIM.

MIN. MAX. MIN. MAX.

C 0.079 0.087 2.0 2.2

B

10°

G

F

D 0.047 0.055 1.2 1.4
E 0.008 0.016 0.2 0.4
F 0.031 0.039 0.8 1.0
G


H 0.003 0.08
J 0.004 0.1

0.004

0.006

0.010



0.1

0.15

0.25

SOD-323 (Case Style 1141)

INCHES MILLIMETERS

DIM.

A
B
C
D 0.010 0.016 0.25 0.4
E 0.003 0.006 0.08 0.15
F 0.063 0.075 1.6 1.9
G 0.045 0.057 1.15 1.45
H 0.091 0.106 2.3

MIN. MAX. MIN. MAX.







0.043

0.004

0.008





1.1

0.1

0.2

2.7

Specifications subject to change without notice.

n North America: Tel. [phone]
n Asia/Pacific: Tel.[phone], Fax [phone]
n Europe: Tel. [phone], Fax[phone]

Visit www.macom.com for additional data sheets and product information.

4