Datasheet MA44769, MA44631B, MA44631A, MA44622B, MA44622A Datasheet (M A COM)

M/A-COM, Inc.

North America: Tel. [phone] ■ Asia/Pacific: Tel. [phone] ■ Europe: Tel. [phone]

Fax [phone] Fax [phone] Fax [phone]

1

Specifications Subject to Change Without Notice.

V3.00

Step Recovery
Diodes

MA43000, MA44600,

MA44700 Series

Features

●

Low Transition Times

●

Tight Capacitance Ranges

●

High Voltage and Low Thermal Resistance
for Higher Input Power

●

Surface Mount Package Available (SOT-23)

Description

The MA44600 series of Step Recovery diodes is designed
for use in low and moderate power multipliers with out­put frequencies of up to 20 GHz. These Step Recovery
diodes generate harmonics by storing a charge as the
diode is driven to forward conductance by the positive
voltage of the input signal. When the signal reverses
polarity, this charge is extracted. The Step Recovery diode
will appear as a low impedance current source until all the
charge is extracted, then it will “snap” to a higher imped­ance. This causes a voltage pulse to form in the impulse
circuit of the multiplier. Step Recovery diodes make
excellent high order multipliers such as comb generators.
They are also useful as efficient moderate power X2- X4
multipliers.

Applications

High Order Narrow Band Moderate Power Multipliers
(MA44600 series)

Comb Generators (MA43592, MA43543)

High Power Circuit Tested Multiplier (MA43000 Series)

Surface Mount Low Power Multipliers (MA44700 Series)

M/A-COM, Inc.

North America: Tel. [phone] ■ Asia/Pacific: Tel. [phone] ■ Europe: Tel. [phone]

Fax [phone] Fax [phone] Fax [phone]

2

Specifications Subject to Change Without Notice.

V3.00

Step Recovery Diodes MA43000, MA44600, MA44700 Series

Electrical Specifications

@ 25°C

Snap V aractors

Notes:

1. When ordering, specify the desired case style by adding the case des­ignation as a suffix to the model number.Case styles for the MA44600
series are 30, 91 and 93.To order in chip form, add the suffix “134” to
the model number.The nominal chip size for the MA44600 series is
15 mils.

Junction

3

Minimum

2

Capacitance Minimum Transition Time T

S

4

Reverse Range (Cj) Lifetime (ps)

Model

1

V oltage V

R

Min./Max. 10 mA/6 mA

Number (Volts) (pF) TI (ns) Nominal Max.

MA44621A 20 0.2 / 0.3 7 50 100
MA44621B 20 0.3 / 0.4 7 50 100
MA44621C 20 0.4 / 0.5 7 50 100
MA44622A 20 0.5 / 0.7 7 50 100
MA44622B 20 0.7 / 0.9 7 50 100
MA44631A 30 0.3 / 0.5 8 70 100
MA44631B 30 0.5 / 0.7 8 70 100
MA44631C 30 0.7 / 0.9 8 70 100
MA44641A 40 0.4 / 0.6 12 90 150
MA44641B 40 0.6 / 0.8 12 90 150
MA44641C 40 0.8 / 1.1 12 90 150
MA44652A 50 0.5 / 0.7 15 150 200
MA44652B 50 0.7 / 0.9 15 150 200
MA44652C 50 0.9 / 1.1 15 150 200
MA44663A 60 0.7 / 0.9 20 250 300
MA44663B 60 0.9 / 1.1 20 250 300
MA44663C 60 1.1 / 1.5 20 250 300
MA44663D 60 1.5 / 2.0 20 250 300

2.

Reverse

voltage (VR) is measured at a reverse bias current of 10 µA.

3. Junction capacitance is measured at a reverse voltage of 6 volts and a
frequency of 1 MHz.

4. Transition time is measured between 20% and 80% points on the volt­age recovery trace.Test conditions are +10 mA and -10 volts.

Case Styles (See appendix for complete dimensions)

30

91

93

134

M/A-COM, Inc.

North America: Tel. [phone] ■ Asia/Pacific: Tel. [phone] ■ Europe: Tel. [phone]

Fax [phone] Fax [phone] Fax [phone]

3

Specifications Subject to Change Without Notice.

V3.00

Notes:

1. The standard case styles are indicated for each model number.
Other case styles are available.Consult the factory for information.

Step Recovery Diodes MA43000, MA44600, MA44700 Series

Electrical Specifications

@ 25° C (Cont’d)

High Power Circuit Tested Step Recovery Diodes

Min./Max.

2

Minimum Maximum Reverse

Output Input Output Input Voltage

Model Case

1

Power Frequency Frequency Power V

R

Number Style (Watts) (GHz) (GHz) (Watts) (Volts)

MA43000 103 4.0 0.333 2.0 15 85 - 105
MA43002 91 1.5 2.000 6.0 5 45 - 70
MA43004 91 0.3 3.300 13.0 2 30 - 45

Min./Max.

3

Junction Min./Max. Maximum Maximum

Capacitance Lifetime,T

L

Snap Time,T

S

Thermal

Model C

j

10 mA/6 mA -10V/10 mA Resistance, jc

Number (pF) (ns) (ps) (C/W)

MA43000 3 - 4.50 250 - 500 600 12
MA43002 1.60 - 2.40 75 - 225 250 25
MA43004 0.45 - 0.85 20 - 50 150 45

Surface Mount Step Recovery Diodes (SOT-23)

Min./Max. Minimum

Suggested

Total Reverse

Capacitance V oltage V

R

Nominal Maximum Nominal Nominal

(pF) (Volts) Carrier T ransition Input Output

Model

f = 1 MHz

IR= 10µA

Lifetime Time Frequency Frequency

Number

VR= 6 V

TL(ns) TS(psec) (GHz) (GHz)

MA44767 3 - 4.5 250 - 500 600 0.05 - 0.5 0.5 - 1.5
MA44768 1.6 - 2.4 30V 75 - 225 250 0.1 - 1 0.5 - 2.5
MA44769 0.8 -1.2 20 - 50 150 0.1 - 1 1 - 5

2. Reverse voltage is measured at reverse bias current of 10 µA.

3. Junction capacitance is measured at a reverse bias of 6 volts and
a frequency of 1 MHz.

Case styles (See appendix for complete dimensions)

91

103

SOT-23 (High Profile)

M/A-COM, Inc.

North America: Tel. [phone] ■ Asia/Pacific: Tel. [phone] ■ Europe: Tel. [phone]

Fax [phone] Fax [phone] Fax [phone]

4

Specifications Subject to Change Without Notice.

V3.00

Step Recovery Diodes MA43000, MA44600, MA44700 Series

Notes:

1. The standard case styles are indicated for each model number. For
other available case styles, consult the factory.

2. This is an operable output frequency range and does not imply instan­taneous bandwidth.

Min./Max.

4

Maximum

2

Min./Max.

3

Junction Min./Max. Maximum Maximum Nominal

2

Input Reverse Capacitance Carrier Snap Time,T

S

Thermal Output

Model Case

1

Power V oltage V

R

Cj Lifetime,T

L

-10V/10 mA Resistance Frequency

Number Style (Watts) (Volts) (pF) (ps) (ps) jc(C/W) (GHz)

MA43592 30 1.0 25 - 40 0.2 - 0.30 9 - 27 90 70 1 - 12
MA43543 93 1.5 20 - 50 0.2 - 0.55 10 - 25 60 125 2 - 20

Absolute Maximum Ratings @ 25°C

Parameter Absolute Maximum
Temperature Range

Operating Range -65°C to +200°C

-65°C to +125°C (SOT-23 only)

Storage Range -65°C to +200°C

-65°C to +125°C (SOT-23 only)

Environmental Performance

The MA44600 and MA43000 series of diodes in ceramic
packages are capable of meeting the tests dictated by the
methods and procedures of the latest revisions of MIL-S­19500, MIL-STD-202 and MIL-STD-750 which specify
mechanical, electrical, thermal and other environmental
tests common to military semiconductor products.

Electrical Specifications @ 25° C (Cont’d)

High Order Step Recovery Diode Varactors for Use in Comb Generation

Case Styles (See appendix for complete dimensions)

3. Breakdown voltage is measured at a reverse bias voltage of 10 µA.

4. Junction capacitance is measured at a reverse bias voltage of 6 volts
and a frequency of 1 MHz.

30

93