Page 1
Schottky Barrier Diodes (SBD)
MA3X748
Silicon epitaxial planar type
For high-frequency rectification
■ Features
•
Low V
type of MA2Z720
•
•
■ Absolute Maximum Ratings Ta = 25°C
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
F
High rectification efficiency caused by its low forward-risevoltage (V
)
F
Optimum for high-frequency rectification because of its short
reverse recovery time (t
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Repetitive peak reverse voltage
Average forward current I
Non-repetitive peak forward I
surge current
Junction temperature T
Storage temperature T
*
(non-repetitive)
)
rr
20 V
20 V
500 mA
3A
125 °C
−55 to +125 °C
V
F(AV)
R
RRM
FSM
j
stg
2.8
0.950.95
0.8
1.5
1
2
0.65 ± 0.15 0.65 ± 0.15
− 0.05
+ 0.2
2.9
1.9 ± 0.2
− 0.1
+ 0.2
1.1
0.1 to 0.3
0.4 ± 0.2
1 : Anode
2 : NC
3 : Cathode
Mini Type Package (3-pin)
Marking Symbol: M4E
Internal Connection
1
2
+ 0.2
− 0.3
+ 0.25
− 0.05
3
0 to 0.1
JEDEC : TO-236
EIAJ : SC-59
3
Unit : mm
1.45
− 0.05
+ 0.1
0.4
− 0.06
+ 0.1
0.16
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
Forward voltage (DC) V
R
F1
V
F2
Terminal capacitance C
Reverse recovery time
*
t
rr
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 400 MHz
3. * : trr measuring instrument
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
W.F.Analyzer
(SAS-8130)
= 50 Ω
R
i
VR = 10 V 30 µA
IF = 500 mA 0.5 V
IF = 10 mA 0.3 V
VR = 0 V, f = 1 MHz 60 pF
t
IF = IR = 100 mA 5 ns
Irr = 10 mA, RL = 100 Ω
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
t
= 100 mA
I
F
= 100 mA
I
R
= 100 Ω
R
L
rr
I
= 10 mA
rr
t
I
F
1
Page 2
MA3X748
Schottky Barrier Diodes (SBD)
IF V
− 20°C
F
75°C
25°C
1
Ta = 125°C
–1
10
)
A
(
F
–2
10
–3
10
Forward current I
–4
10
–5
10
0 0.1 0.2 0.3 0.4 0.5 0.6
Forward voltage VF (V
IR T
4
10
3
10
)
µA
(
R
2
10
10
Reverse current I
1
−1
10
−40 0 40 80 120 160 200
a
VR = 20 V
10 V
6 V
Ambient temperature Ta (°C
IR V
Ct V
R
Ta = 125°C
75°C
25°C
R
0.8
0.7
)
0.6
V
(
F
0.5
0.4
0.3
0.2
Forward voltage V
0.1
0
–40 0 40 80 120 160 200
)
1 000
300
)
A
(
100
F(surge)
30
10
3
1
Forward surge current I
0.3
0.1
0.1
)
4
10
3
10
)
µA
(
R
2
10
10
Reverse current I
1
−1
10
)
)
0 5 10 15 20 25 30
Reverse voltage VR (V
200
)
pF
150
(
t
100
50
Terminal capacitance C
0
5101520
0
Reverse voltage VR (V
VF T
a
IF = 500 mA
50 mA
5 mA
Ambient temperature Ta (°C
I
t
F(surge)
0.3 3 30 100101
Pulse width tW (ms
W
Ta = 25°C
I
t
W
)
F(surge)
)
2
Loading...