Page 1
Switching Diodes
MA3S132K
Silicon epitaxial planar type
For switching circuits
■ Features
•
Short reverse recovery time t
•
Small terminal capacitance, C
•
Super-small SS-mini type package, allowing high-density mounting
rr
t
Unit : mm
1.60 ± 0.1
0.80
0.80 ± 0.05
0.28 ± 0.05
1
0.80
0.51
− 0.03
+ 0.05
1.60
0.51
0.80
2
0.28 ± 0.05
0.28 ± 0.05
3
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Peak reverse voltage V
Forward current (DC) I
Peak forward current I
Non-repetitive peak forward I
surge current
*
Junction temperature T
Storage temperature T
R
RM
F
FM
FSM
j
−55 to +150 °C
stg
100 mA
225 mA
500 mA
150 °C
Note) * : t = 1 s
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
Forward voltage (DC) V
Reverse voltage (DC) V
Terminal capacitance C
Reverse recovery time
*
Note) 1. Rated input/output frequency: 100 MHz
2. * : trr measuring circuit
R
F
R
t
t
rr
− 0.02
+ 0.05
0.12
0.440.44
1 : Anode
80 V
80 V
− 0.03
+ 0.05
0.60
+ 0.05
0.88
− 0.03
2 : NC
3 : Cathode
SS-Mini Type Package (3-pin)
Marking Symbol: MI
Internal Connection
1
3
2
VR = 75 V 100 nA
IF = 100 mA 1.2 V
IR = 100 µA80V
VR = 0 V, f = 1 MHz 2 pF
IF = 10 mA, VR = 6 V 3 ns
Irr = 0.1 · IR, RL = 100 Ω
Bias Application Unit N-50BU
Pulse Generator
(PG-10N)
= 50 Ω
R
s
A
38 W.F.Analyzer
(SAS-8130)
= 50 Ω
R
i
Input Pulse Output Pulse
t
t
p
r
t
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
I
F
= 10 mA
I
F
= 6 V
V
R
= 100 Ω
R
L
t
rr
Irr = 0.1 · I
t
R
1
Page 2
MA3S132K
Switching Diodes
IF V
3
10
2
10
)
Ta = 150°C
mA
(
Forward current I
100°C
F
10
10
25°C
10
− 20°C
1
−1
−2
0 0.2 0.4 0.6 0.8 1.0 1.2
F
Forward voltage VF (V
T
5
10
4
10
)
nA
(
R
3
10
2
10
Reverse current I
10
1
−40 0 40 80 120 160 200
a
VR = 75 V
Ambient temperature Ta (°C
35 V
6 V
IR V
Ct V
R
Ta = 150°C
100°C
25°C
R IR
f = 1 MHz
T
= 25
a
1.6
1.4
)
1.2
V
(
F
1.0
0.8
0.6
0.4
Forward voltage V
0.2
0
−40 0 40 80 120 160 200
)
1 000
°C
300
)
A
(
100
F(surge)
30
10
3
1
Forward surge current I
0.3
0.1
)
5
10
4
10
)
nA
(
R
3
10
2
10
Reverse current I
10
1
)
)
0 20406080100120
Reverse voltage VR (V
1.2
1.0
)
pF
(
t
0.8
0.6
0.4
Terminal capacitance C
0.2
0
0 20406080100120
Reverse voltage VR (V
VF T
a
IF = 100 mA
10 mA
3 mA
Ambient temperature Ta (°C
I
t
F(surge)
0.3 3 301010.1
Pulse width tW (ms
W
Ta = 25°C
I
F(surge)
t
W
Non repetitive
)
)
2
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