Page 1
Switching Diodes
1.60 ± 0.1
1.60
+ 0.05
− 0.03
0.60
+ 0.05
− 0.03
0.12
+ 0.05
− 0.02
0.80
1
2
0.440.44
3
0.80 ± 0.05
0.80
0.28 ± 0.05
0.80
0.51
0.51
0.28 ± 0.05
0.28 ± 0.05
0.88
+ 0.05
− 0.03
MA3S132E
Silicon epitaxial planar type
For switching circuits
■ Features
•
Short reverse recovery time t
•
Small terminal capacitance, C
•
Super-small SS-mini type package contained two elements, allowing high-density mounting
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Peak reverse voltage V
Forward current
(DC)
Peak forward
current
Non-repetitive peak
forward surge current
Junction temperature T
Storage temperature T
Note) * : t = 1 s
Single I
Double 150
Single I
Double 340
Single I
*
Double 750
rr
t
R
RM
F
FM
FSM
j
stg
80 V
80 V
100
225
500
mA
mA
mA
150 °C
−55 to +150 °C
Unit : mm
1 : Anode 1
2 : Anode 2
3 : Cathode 1
Cathode 2
SS-Mini Type Package (3-pin)
Marking Symbol: MU
Internal Connection
1
3
2
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
Forward voltage (DC) V
Reverse voltage (DC) V
Terminal capacitance C
Reverse recovery time
*
R
F
R
t
t
rr
Note) 1. Rated input/output frequency: 100 MHz
2. * : trr measuring circuit
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Bias Application Unit N-50BU
A
W.F.Analyzer
(SAS-8130)
= 50 Ω
R
i
VR = 75 V 100 nA
IF = 100 mA 1.2 V
IR = 100 µA80V
VR = 0 V, f = 1 MHz 2 pF
IF = 10 mA, VR = 6 V 3 ns
Irr = 0.1 · IR, RL = 100 Ω
Input Pulse Output Pulse
t
t
p
r
10%
V
90%
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
t
= 10 mA
I
F
= 6 V
V
R
= 100 Ω
R
L
rr
Irr = 0.1 · I
t
R
I
F
1
Page 2
MA3S132E
Switching Diodes
3
IF V
10
2
10
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
0 0.2 0.4 0.6 0.8 1.0 1.2
F
Forward voltage VF (V
T
5
10
4
10
)
nA
(
R
3
10
2
10
Reverse current I
10
a
Ta = 150°C
100°C
25°C
− 20°C
)
VR = 75 V
35 V
6 V
5
IR V
10
4
10
)
nA
(
R
3
10
2
10
Reverse current I
10
1
0 20406080100120
R
Ta = 150°C
100°C
25°C
Reverse voltage VR (V
Ct V
1.2
1.0
)
pF
(
t
0.8
0.6
0.4
Terminal capacitance C
0.2
R IR
f = 1 MHz
T
a
)
= 25°C
VF T
1.6
1.4
)
1.2
V
(
F
1.0
0.8
0.6
0.4
Forward voltage V
0.2
0
−40 0 40 80 120 160 200
a
IF = 100 mA
Ambient temperature Ta (°C
I
t
1 000
300
)
A
(
100
F(surge)
30
10
3
1
Forward surge current I
0.3
F(surge)
W
Ta = 25°C
t
W
Non repetitive
10 mA
3 mA
I
F(surge)
)
1
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
)
0
0 20406080100120
Reverse voltage VR (V
)
0.1
0.03
Pulse width tW (ms
0.3 3 301010.1
)
2
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