Page 1
Switching Diodes
1.60 ± 0.1
1.60
+ 0.05
− 0.03
0.60
+ 0.05
− 0.03
0.12
+ 0.05
− 0.02
0.80
1
2
0.440.44
3
0.80 ± 0.05
0.80
0.28 ± 0.05
0.80
0.51
0.51
0.28 ± 0.05
0.28 ± 0.05
0.88
+ 0.05
− 0.03
MA3S132D
Silicon epitaxial planar type
For switching circuits
■ Features
•
Short reverse recovery time t
•
Small terminal capacitance, C
•
Super-small SS-mini type package contained two elements, allowing high-density mounting
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Peak reverse voltage V
Forward current
(DC)
Peak forward
current
Non-repetitive peak
forward surge current
Junction temperature T
Storage temperature T
Note) * : t = 1 s
Single I
Double 150
Single I
Double 340
Single I
*
Double 750
rr
t
R
RM
F
FM
FSM
j
stg
80 V
80 V
100
225
500
mA
mA
mA
150 °C
−55 to +150 °C
Unit : mm
1 : Cathode 1
2 : Cathode 2
3 : Anode 1
Anode 2
SS-Mini Type Package (3-pin)
Marking Symbol: MO
Internal Connection
1
3
2
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
R
Forward voltage (DC) V
Reverse voltage (DC) V
Terminal capacitance C
Reverse recovery time
*
t
rr
Note) 1. Rated input/output frequency: 100 MHz
2. * : trr measuring circuit
Pulse Generator
(PG-10N)
R
s
Bias Application Unit N-50BU
A
= 50 Ω
W.F.Analyzer
(SAS-8130)
= 50 Ω
R
i
VR = 75 V 100 nA
IF = 100 mA 1.2 V
F
IR = 100 µA80V
R
VR = 0 V, f = 1 MHz 15 pF
t
IF = 10 mA, VR = 6 V 10 ns
Irr = 0.1 · IR, RL = 100 Ω
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
t
= 10 mA
I
F
= 6 V
V
R
= 100 Ω
R
L
rr
I
= 0.1 · I
rr
t
R
I
F
1
Page 2
MA3S132D
Switching Diodes
IF V
3
10
2
10
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
0 0.2 0.4 0.6 0.8 1.0 1.2
F
Ta = 150°C
Forward voltage VF (V
T
4
10
3
10
)
nA
(
R
2
10
10
Reverse current I
1
−1
10
−40 0 40 80 120 160 200
a
Ambient temperature Ta (°C
100°C
25°C
− 20°C
)
VR = 75 V
35 V
6 V
IR V
Ct V
R
Ta = 150°C
100°C
25°C
R IR
f = 1 MHz
T
= 25°C
a
1.6
1.4
)
1.2
V
(
F
1.0
0.8
0.6
0.4
Forward voltage V
0.2
0
−40 0 40 80 120 160 200
)
1 000
300
)
A
(
100
F(surge)
30
10
3
1
Forward surge current I
0.3
0.1
0.03
)
4
10
3
10
)
nA
(
R
2
10
10
Reverse current I
1
−1
10
0 20406080100120
Reverse voltage VR (V
8
7
)
pF
6
(
t
5
4
3
2
Terminal capacitance C
1
0
)
0 20406080100120
Reverse voltage VR (V
VF T
a
IF = 100 mA
10 mA
3 mA
Ambient temperature Ta (°C
I
t
F(surge)
0.3 3 301010.1
Pulse width tW (ms
W
Ta = 25°C
I
F(surge)
t
W
Non repetitive
)
)
2
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