Page 1
Band Switching Diodes
1st Band
2nd Band
φ 0.45 max.
φ 1.75 max.
13 min.
0.2 max.0.2 max.
13 min.
2.2 ± 0.3
COLORED BAND
INDICATES
CATHODE
2
1
MA2C858
Silicon epitaxial planar type
For band switching
■ Features
•
Extra-small DHD envelope, allowing to insert into a 5 mm pitch
hole.
•
Less voltage dependence of the terminal capacitance C
•
Low forward dynamic resistance r
•
Optimum for a band switching of a tuner
f
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Forward current (DC) I
Operating ambient temperature
Storage temperature T
R
F
T
opr
stg
35 V
100 mA
−25 to +85 °C
−55 to +100 °C
t
Unit : mm
1 : Cathode
2 : Anode
JEDEC : DO-34
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC) V
Terminal capacitance C
Forward dynamic resistance r
*
I
R
F
t
f
Note) 1．Rated input/output frequency: 100 MHz
2．* : Measurement in light shielded condition
■ Cathode Indication
Type No. MA2C858
Color 1st Band Yellow
2nd Band Yellow
VR = 33 V 100 nA
IF = 100 mA 1 V
VR = 6 V, f = 1 MHz 1.2 pF
IF = 2 mA, f = 100 MHz 0.9 Ω
1
Page 2
MA2C858
Band Switching Diodes
IF V
2
10
)
10
mA
(
F
1
−1
10
Forward current I
Ta = 85°C
−2
10
0 0.2 0.4 0.6 0.8 1.0
F
25°C
Forward voltage VF (V
f
8
)
Ω
(
f
6
4
rf
− 25°C
)
IF = 2 mA
= 25°C
T
a
IR V
2
10
10
)
nA
(
R
1
−1
10
Reverse current I
−2
10
−3
10
0 1020304050
R
Ta = 85°C
25°C
Reverse voltage VR (V
rf f
6
)
5
Ω
(
f
4
3
IF = 3 mA
= 25°C
T
a
Tester: TDC-121A
r
f
IR T
2
10
10
)
nA
(
VR = 25 V 10 V
R
1
−1
10
Reverse current I
−2
10
−3
10
)
0 40 80 120 160
Ambient temperature Ta (°C
a
)
rf f
1.2
)
1.0
Ω
(
f
0.8
0.6
IF = 3 mA
= 25°C
T
a
Tester: TDC-121A
r
f
2
Forward dynamic resistance r
0
1
10 1003 30 300 1 000
Frequency f (MHz
I
4
)
Ω
(
f
3
2
1
rf
Forward dynamic resistance r
0
0.1
1100.3 3 30 100
Forward current IF (mA
F
f = 100 MHz
= 25°C
T
a
2
1
Forward dynamic resistance r
0
1
)
1.6
)
pF
1.2
(
t
0.8
0.4
Terminal capacitance C
0
0
)
10 1003 30 300 1 000
Frequency f (MHz
Ct V
10 20 30 40
R
f = 1 MHz
T
)
= 25°C
a
Reverse voltage VR (V
)
0.4
0.2
Forward dynamic resistance r
0
10
100
30 300
Frequency f (MHz
1 000
3 000 10 000
)
2
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