Datasheet MA08509D Datasheet (M A COM)

MA08509D

10W Power Amplifier Die Preliminary Release
(8.0-11 GHz)

FEATURES

DD

V

• Broadband Perform anc e

• 32% Typical Power Added Efficiency

• 50 Ω Input/Output Impedance

• Self-Aligned MSAG® MESFET Process

RF

IN

GG

V

Description Maximum Ratings (T

The MA08509D is a three stage MMIC power
amplifier fabricated using M/A-COM’s mature
GaAs Self-Aligned MSAG

®

MESFET Process.
This product is fully matched to 50 ohms on
both the input and the output.

ELECTRICAL CHARACTERISTICS V

Characteristic Symbol Min Typ Max Unit

Frequency
Output Power, saturated P
Power Gain, saturated G

Gain Flatness Over Frequency @ Pin = 18 dBm

Power Added Efficiency (P

OUT=PSAT

Return Loss S11 -6 -4 dB
Harmonics
Output Stage Thermal Resistance @ Pin = 18 dBm Rth 5.4

) PAE 25 32 %

DD

Rating Symbol Value Unit

DC Drain Supply Voltage VDD 12
DC Gate Supply Voltage VGG -6 Vdc

RF Input Power
Junction Temperature

Storage Temperature T

= 10.0 V, V

= -4 V, PIN = 18 dBm, TA = 25 °C

GG

ƒ

39.0 40 41.5 dBm

SAT

20 22 dB

SAT

- +/- 1.0 dB

, 3ƒο

2ƒ

ο

DD

V

OUT

RF

= 25 °C unless otherwise noted)

A

Vdc

PIN 500 mW
TJ 150 °C

-40 to

STG

°C

+85

8.0 - 11.0 GHz

-30 dBc
°C/W

Specifications subject to change without notice.

 North America: Tel. [phone], Fax [phone]
 Asia/Pacific: Tel. [phone], Fax [phone]
 Europe: Tel. [phone], Fax [phone]

Visit www.macom.com for additional data sheets and product information

902179 D

10W Power Amplifier Die (8-11 GHz) MA08509D

TYPICAL CHARACTERISTICS (V

42

= 10 V, VGG = -4 V, PIN = 18 dBm)

DD

32

40

38

36

Pout (dBm)

34

32

30

8 8.25 8.5 8.75 9 9.25 9.5 9.75 10 10.25 10.5 10.75 11

Frequency (GHz)

28

24

20

16

Gain (dB)

12

8

4

0

8 8.25 8.5 8.75 9 9.25 9.5 9.75 10 10.25 10.5 10.75 11

Frequency (GHz)

Figure 1. Output Power vs. Frequency Figure 2. Gain vs. Frequency

45

40

35

30

25

20

PAE (%)

15

10

5

0

8 8.25 8.5 8.75 9 9.25 9.5 9.75 10 10.25 10.5 10.75 11

Frequency (GHz)

0

-5

-10

-15

Return Loss(dB)

-20

-25
8 8.25 8.5 8.75 9 9.25 9.5 9.75 10 10.25 10.5 10.75 11

Frequency (GHz)

Figure 3. Power Added Efficiency vs. Frequency Figure 4. Input Return Loss vs. Frequency

Specifications subject to change without notice.

 North America: Tel. [phone], Fax [phone]
 Asia/Pacific: Tel. [phone], Fax [phone]
 Europe: Tel. [phone], Fax [phone]

Visit www.macom.com for additional data sheets and product information

902179 D

10W Power Amplifier Die (8-11 GHz) MA08509D

APPLICATION INFORMATION

F

µ

F

µ

0.1

RF IN

F

µ

0.1

50 Ω

VGG

5000 pF

5000 pF

VGG

100 pF

100 pF

F

µ

0.1

VDD

VDD

5000 pF

0.1

VDD

50

VDD

F

µ

0.1

F

µ

0.1

5000 pF

5000 pF

RF OUT

Ω

5000 pF

Figure 5. Recommended bonding diagram for pedestal
mount. Support circuitry typical of MMIC characterization
fixture for C W testing

Assembly:

Chip dimensions: 4.6 mm x 4.6 mm, .003”

thickness.
Die attach: Use AuSn (80/20) 1-2 mil.

preform solder. Limit time @ 300 °C to less
than 5 minutes.
Wirebonding: Bond @ 160 °C using
standard ball or thermal co mpression wedge
bond techniques. For DC pad connections,
use either ball or wedge bonds. For best RF
performance, use wedge bonds of shortest
length, although ball bonds are also
acceptable.

Biasing:

1. User must apply negative bias to VGG before
applying positive bias to V
damage to amplifier.

to prevent

DD

Specifications subject to change without notice.

 North America: Tel. [phone], Fax [phone]
 Asia/Pacific: Tel. [phone], Fax [phone]
 Europe: Tel. [phone], Fax [phone]

Visit www.macom.com for additional data sheets and product information

902179 D