n 20 dB Gain – dramatically increases range of your low
power Bluetooth devices
n Single 3.0V positive supply – operates over a wide
range of supply voltages
n Extremely small size – 6 pin SOT plastic package -
3 mm x 1.75 mm body size
n Output power easily controllable via V
n 45% Power Added Efficiency
n 100% Duty Cycle
n 2000 to 2900 MHz Operation
n Self-Aligned MSAG
®
-Lite MESFET Process
DD1
Description
The MA02305AK is an RF power am plifier based on M/ACOM’s Self-Aligned MSAG MESFET Process. This
product is designed for use in 2.4 GHz ISM products as a
booster for high power Bluetooth devices. Output power
can be controlled to meet Bluetooth requirements via varying input power or the voltage on V
DD1
.
Ordering Information
Part Number Package
MA02305AK-R7 7 inch, 3000 Piece Reel
MA02305AK-SMB MA02305AK Test Board
MA02305AK
Maximum Ratings (T
Rating
DC Supply Voltage VDD 5.5 V
RF Input Power PIN 10 mW
Junction Temperature TJ 150 °C
Storage Temperature Range T
= 25 °C unless otherwise noted)
A
Symbol Value Unit
-40 to +150 °C
STG
Electrical Characteristics: V
Characteristic Symbol Min Typ Max Unit
Frequency Range ƒ 2400 2500 MHz
Output Power f = 2450 MHz P
Power Added Efficiency f = 2450 MHz η 40 45 %
Harmonics 2ƒ
Input VSWR - 1.5 2.0 :1
Off Isolation (VDD=0 V) S21 -25 dB
Thermal Resistance, junction to soldering point (pin 2) RTH 180 °C/W
Load Mismatch (VDD = 5.5 V, VSWR = 8:1, PIN = 0 dBm) - No Degradation in Power Output
Stability (P
= 0dBm, VDD = 0-5.5 V, Load VSWR = 5:1, fixed phases) - All non-harmonically related outputs
IN
= 2.5 V, V
DD1
= 3 V, P
DD2
= +0 dBm, Duty Cycle = 100%, T
IN
18.7 20 dBm
OUT
3ƒ
-30
-27
more than 60 dB below desired signal
A
-26
-22
= 25°C
dBc
Page 2
3.0 V 100 mW RF Power Amplifier IC for Bluetooth
Output Power (dBm)
Pout (dBm), PAE
Pout (dBm), PAE
Typical Performance Curves
Output Power, Drain Currents, and Efficiency vs.
Frequency V
DD2
= 3 V , V
= 2.5 V, P
DD1
= 0 dBm
IN
MA02305AK
V 1.00
Output Power, Drain Currents and Efficiency vs.
Input Power V
= 3 V , ƒ = 2450 MHz, V
DD2
DD1
= 2.5V
50
40
30
65
55
45
35
20
10
Pout (dBm), PAE (%)
0
2300 2350 2400 2450 2500 2550 2600
Frequency (MHz)
25
15
5
Pout
PAE
Id1
Id2
Output Power, Drain Currents and Efficiency vs.
Supply Voltage
P
= 0 dBm , ƒ = 2450 MHz, V
IN
50
40
30
20
10
DD1
= 2.5 V
100
80
60
40
20
Pout (dBm), PAE (%)
0
012345
VD2 (volts)
0
Pout
PAE
Id1
Id2
Id1, Id2 (mA)
Output Power, Drain Currents and Efficiency vs.
V
P
IN
Id1, Id2 (mA)
50
40
30
(%)
20
10
0
-15 -10-505
Input Power (dBm)
for Power Control
DD1
= 0 dBm , ƒ = 2450 MHz, V
60
50
40
30
20
10
0
Pout (dBm), PAE (%)
-10
0.00.51.01.52.02.53.0
VD1 (volts)
DD2
= 3 V
100
80
60
40
20
0
70
60
50
40
30
20
10
0
Id1, Id2 (mA)
Pout
PAE
Id1
Id2
Id1, Id2 (mA)
Pout
PAE
Id1
Id2
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844 -8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Harmonics
P
= 0 dBm , ƒ0 = 2450 MHz, V
IN
20
10
0
-10
-20
-30
-40
fo2fo3fo4fo5fo
= 2.5V, V
DD1
DD2
= 3V
Output Power, Input Return Loss and Efficiency
vs. Temperature
P
= 0 dBm , ƒ = 2450 MHz, V
IN
50
40
30
(%)
20
10
-402580
Temperature (C)
= 2.5 V, V
DD1
= 3 V
DD2
-10
-15
-20
-25
-30
Input Return Loss (dB)
Pout
PAE
IRL
Page 3
3.0 V 100 mW RF Power Amplifier IC for Bluetooth
Mechanical Data
C1
MA02305AK
V 1.00
C4
C2
C5
R1
L1
Component layout and printed circuit drawing for evaluation board.
E valuation Board Schematic. 50 Ω transmission line lengths in inches based on 10 mil thick, FR4. Critical line lengths denoted with (*).
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844 -8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Vgg1Vgg2
R1
0.28*
3
Page 4
3.0 V 100 mW RF Power Amplifier IC for Bluetooth
Designing With the MA02305AK
The MA02305AK is built using a near -enhancement mode FET that operates from a single supply voltage. A negative voltage is not required because the FET is designed to operate with a +0V DC gate bias.
There is no impedance matching or RF choking on this IC – these functions are supplied externally. This approach
offers the highest level of performance.
To duplicate MA02305AK data sheet performance, your circuit board must recreate the same impedances developed
on the evaluation board depicted in the preceding figures. One-port S-parameters looking into the board impedances
away from the device are listed below. The calibration plane for the datasheet is the pin of the device.