The MA02303GJ is an RF power amplifier based on
M/A-COM’s Self-Aligned MSAG MESFET Process.
This product is designed for use in 2.4 GHz ISM
products. For booster applications, it features a low
power “bypass” mode and output power control
DC Supply Voltage
RF Input Power
Junction Temperature
Storage Temperature
Operating Temperature
Moisture Sensitivity
1. Beyond these limits, the device may be damaged or device reliability
reduced. Functional operation at absolute-maximum-rated conditions is
not implied.
VDD
P
IN
T
J
T
STG
T
OPER
JEDEC Level 1
5.5 V
10 mW
150 °C
-40 to +150 °C
-40 to +100 °C
Page 2
RF Power Amplifier IC for 2.4 GHz ISM
MA02303GJ
Electrical Specifications: V
= +3.3 V, P
DD
= -2 dBm, Duty Cycle = 100 %,
IN
TS = 37 °C (Note 1), measured on evaluation board shown in Figure 11.
Characteristic Symbol Min. Typ. Max. Unit
Frequency Range
Output Power, ƒ = 2450 MHz
Power Added Efficiency, ƒ = 2450 MHz η
Current, ƒ = 2450 MHz
Current for linear operation, ƒ = 2450 MHz,
PIN adjusted for P
= 20.0 dBm +/- 0.2 dBm
OUT
Gain, ƒ = 2450 MHz,
PIN adjusted for P
= 20.0 dBm +/- 0.2 dBm
OUT
Harmonics, ƒ = 2450 MHz
Input VSWR, ƒ = 2450 MHz
Off Isolation (V
DD
=0 V)
Thermal Resistance, junction to package bottom
Third Order Intercept Point
Load Mismatch (V
Stability (P
IN
= 5.5 V, VSWR = 8:1, PIN = 0 dBm)
DD
= -2 to 2 dBm, VDD = 0-5.5 V, Load VSWR = 5:1,
all phases)
ƒ 2400 2500 MHz
P
OUT
I
DD
I
DD
G 29.5 dB
2ƒ, 3ƒ, 4 ƒ -40 dBc
— — 2.0:1 —
— 40 dB
R
TH
IP
3
—
—
25.3 26.5 — dBm
51 %
265 415 mA
415 mA
25 43 dBm
No Degradation in Power Output
All non-harmonically related outputs more
than 60 dB below desired signal
°C/W
1. TS is the temperature measured at the soldering point of the downset paddle on the bottom of the IC.
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
2
Page 3
RF Power Amplifier IC for 2.4 GHz ISM
B
DD
B
DD
B
B
DD
B
DD
DD1
DD2
Typical Characteristics
(Measured data from process nominal devices)
MA02303GJ
Output Power, Drain Current and
Efficiency vs. Input Power
60
50
40
30
20
(dBm), PAE (%)
OUT
10
P
0
-10-505
PAE
P
OUT
V
= 3.3 V
DD1, 2, 3
F = 2450 MHz
PIN (dBm)
Output Power, Drain Current and Efficiency
vs. Supply Voltage
60
50
40
30
20
(dBm), PAE (%)
OUT
10
P
0
PAE
P
OUT
PIN = -2 dBm
F = 2450 MHz
P
OUT
I
DD
12345
PIN (dBm)
PAE
I
DD
Output Power, and Drain Current vs. Input
Power for Low Current “Bypass” Mode
(V
= 3.3 V, V
DD1,2
300
250
I
DD
200
150
100
50
0
(mA)
I
(dBm), PAE (%)
OUT
P
12
10
8
PAE
6
P
OUT
4
2
0
-10-505
= 0.0 V)
DD3
V
= 3.3 V, V
DD1, 2
F = 2450 MHz
DD3
= 0.0 V
300
250
200
I
DD
150
100
(mA)
I
50
0
PIN (dBm)
Output Power, Drain Current and Efficiency
for Power Control
DD1
P
OUT
600
500
I
I
DD1
DD2
400
300
200
(mA)
, I
I
100
0
V
(V)
DD1
0.35
0.30
0.25
0.20
0.15
0.10
0.05
(A)
I
vs. V
30
25
20
15
(dBm)
OUT
10
P
5
0
0.00.51.01.52.02.53.0
Output Power, Input Return Loss and
Efficiency vs. Frequency
60
50
40
30
20
(dBm), PAE (%)
OUT
P
P
= - 2 dBm
IN
VDD = 3.3 V
10
0
22002300240025002600
FREQUENCY (MHz)
Specifications subject to change without notice.
PAE
P
OUT
IRL
0
-5
-10
-15
-20
-25
-30
IRL (dB)
Output Power and Drain Current vs.
Temperature at VDD = +3.0 V
35
30
25
20
(dBm)
15
OUT
P
PIN = - 2 dBm
10
VDD - 3.0 V
5
F = 2450 MHz
0
-50050100
Temperature, TS (oC)
350
300
250
I
200
DD
P
OUT
150
(mA)
I
100
50
0
3
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Page 4
RF Power Amplifier IC for 2.4 GHz ISM
B
DD
B
DD
Typical Characteristics (Cont’d)
(Measured data from process nominal devices)
MA02303GJ
Output Power and Drain Current vs.
Temperature at V
35
30
25
20
(dBm)
15
OUT
P
10
PIN = - 2 dBm
VDD - 3.2 V
5
F = 2450 MHz
0
-50050100
= +3.2 V
DD
Temperature, TS (oC)
Harmonics
(dBm)
OUT
P
-10
-15
-20
30
25
20
15
10
5
0
-5
ƒ02ƒ03ƒ04ƒ0
PIN = -2dBm
= 2450MHz
ƒ
0
VDD = 3.3V
Output Power and Drain Current vs.
Temperature at V
(mA)
I
35
30
25
20
(dBm)
15
OUT
P
PIN = - 2 dBm
10
VDD - 3.6 V
5
F = 2450 MHz
0
-50050100
350
300
250
200
I
DD
150
P
OUT
100
50
0
= +3.6V
DD
Temperature, TS (oC)
350
300
250
200
I
DD
P
OUT
150
(mA)
I
100
50
0
Maximum Operating Temperature (Ts) to
Maintain <150 °C Junction Temperature.
6
5
OUT
- P
4
DD3
3
* V
DD
2
(W) = I
1
DISS
P
0
-50050100150
Temperature TS (oC)
Specifications subject to change without notice.
4
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Page 5
RF Power Amplifier IC for 2.4 GHz ISM
DD
L2 1 2 3 4 5 6 7 8 T2
T1
R1
T5
Downset Paddle
T7
Mechanical Data
Figure 11 Component layout and printed circuit drawing for evaluation board (60 mil GETEK
board).
*The board material is 0.060" FR-4 (distance is between RF and GND) with a dielectric constant of
about 4.3 (standard FR-4)
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Full-
To Board Ground
C4
T8
RF
OUT
T6
C5
C6
T1 = 0.15"
T2 = 0.21"
T3 = 0.11" (Not very critical)
T4 = 0.16"
T5 = 0.13"
T6 = 0.16"
T7 = 0.13" (Not very critical)
T8 = 0.077" (Not very critical)
T1, T2, T3, T5, T6 are 0.077" wide
T4, T7, and T8 are 0.026" wide
5
Page 6
RF Power Amplifier IC for 2.4 GHz ISM
Designing with the MA02303GJ
The MA02303GJ is built using a near-enhancement mode FET that operates from a single supply voltage. A negative
voltage is not required because the FET is designed to operate with a +0V DC gate bias.
There is no impedance matching or RF choking on this IC – these functions are supplied externally. This approach
offers the highest level of performance, the lowest bill of materials cost, and far fewer components than a discrete design.
To duplicate MA02303GJ data sheet performance, your circuit board must recreate the same impedances developed on
this evaluation board. The table below has one-port s-parameter measurements looking into the traces on the evaluation board. S-parameters of the MA02303GJ are not supplied because the device is designed to operate under largesignal conditions.
Note: All dimensions per JEDEC MO-187 Var. AA (issue B)
except for D1, E2, and A1. See JEDEC or contact M/A-COM
for additional dimensional and tolerance information.
0o 6
Measurement (inches)
0.1929
basic
0.0256
basic
o
0o 6o
0.1929
basic
0.0256
basic
7
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