Datasheet MA02203AD-R7, MA02203AD-R13 Datasheet (M A COM)

3.6 V, 450 mW DECT RF Power

V 1.0

GND

IN

GND

OUT

MA02203AD

Amplifier IC

Features

§ Ideal for DECT Applications

§ +26.5 dBm Output Power

§ 24.5 dB Power Gain

Functional Schematic

N/C

+V

DD1

N/C
+V

DD2

§ Single Positive Supply

§ Class A Bias

§ No External RF Matching Required

Description

The MA02203AD is a two stage power amplifier
designed for DECT applications to have an output
power of +26.5 dBm with an input power of 2 dBm.
This power amplifier operates at +3.6 volts with
35% typical power added efficiency. The

Pin Configuration

MA02203AD is mounted in a narrow body 16-pin
SOIC plastic package.

The MA02203AD is fabricated using M/A-COM’s
self-aligned MSAG®-Lite MESFET process for a low
single supply voltage, high power efficiency, and
excellent reliability.

This part is not recommended for new designs. M/A­COM’s MA02206GJ has superior RF performance
with less DC power consumption in a smaller
package. Pricing on the MA02206GJ is also less
than the MA02203AD.

Ordering Information

Part Number Description

MA02203AD-R7 7 inch, 1000 piece reel
MA02203AD-R13

13 inch, 3000 piece reel

GND

RF

GND
GND

N/C

16 pin narrow body SOIC

Pin Function Description

1 N/C Not Connected
2 V
3 GND Ground
4 GND Ground
5 RFIN RF Input
6 GND Ground
7 GND Ground
8 N/C Not Connected

9 N/C Not Connected
10 GND Ground
11 GND Ground
12 RF
13 GND Ground
14 GND Ground
15 V
16 N/C Not Connected

First Stage Supply Voltage

DD1

RF Output

OUT

Second Stage Supply Voltage

DD2

GND
RF
GND

GND
N/C

Specifications subject to change without notice.

n North America: Tel. [phone]
n Asia/Pacific: Tel.[phone], Fax [phone]
n Europe: Tel. [phone], Fax[phone]

Visit www.macom.com for additional data sheets and product information.

Part Description

V 1.0

C, Load

3.6 V, 450 mW DECT RF Power Amplifier IC MA02203AD

Electrical Specifications: TS = 40 °C1, Z0 = 50 Ω Ω

Parameter Test Conditions Units Min Typ Max

Frequency MHz 1880 1900
Output Power dBm 25.5 26.5 27.5
Pout Frequency Dependency dB 0.2 0.5
Power Gain dB 24.5
Current Consumption mA 350 420
Input VSWR, PA On - 1.6:1 2.0:1
Input VSWR, PA Off V
Isolation, PA Off V
2nd Harmonics dBc 31
3rd Harmonics dBc 55

Thermal Resistance
Load Mismatch VDD = 4.6 V, VSWR = 10:1, PIN = 7 dBm - No degradation

Stability

1. Ts is the temperature measured at the soldering point of pin 11.

2. Unless otherwise specified, input power is +2 dBm, VDD is +3.6 V, and test frequency is 1890 MHz.

, V

DD1
DD1

= 0 V - 1.4:1 2.0:1

DD2

, V

= 0 V dB 40

DD2

Junction of 2nd stage FET to pin 11, Duty
Cycle=50%

P

= -3 to +7 dBm, V

IN

< P

< 450 mW, TS = -40 to +75 °

OUT

= 0 - 4.6 V, 0 mW

DD

VSWR = 10:1

2,3

o

C/W 63

- All spurs < -60 dBc

Absolute Maximum Ratings1

Parameter Absolute Maximum

Max Input Power +6 dBm
Operating Voltages +5.5 volts
Operating Temperature, Ts

-40 °C to +75 °C
Channel Temperature +150 °C
Storage Temperature -40 °C to +150 °C

1. Exceeding any one or combination of these limits may cause permanent damage.

Specifications subject to change without notice.

n North America: Tel. [phone]
n Asia/Pacific: Tel.[phone], Fax [phone]
n Europe: Tel. [phone], Fax[phone]

Visit www.macom.com for additional data sheets and product information.

Part Description

V 1.0

, Output Power (dBm)

3.6 V, 450 mW DECT RF Power Amplifier IC MA02203AD

Application Information

Static Sensitivity

Gallium arsenide integrated circuits are ESD sensitive and can be damaged by static electricity. Use proper ESD precautions when
handling these devices.

Board Layout

Sample Test Board 50 Ohm Lead Transition

Typical Performance Curves

Output Power and Current vs. Input Power

30

25

20

15

P

10

OUT

f = 1.89 GHz
V

= 3.6 V

DD

5

0

-10 -5 0 5
PIN, Input Power (dBm)

P

OUT

I

DD

0.6

0.4

, Drain Current (A)

0.2

DD

I

0.0

Specifications subject to change without notice.

n North America: Tel. [phone]
n Asia/Pacific: Tel.[phone], Fax [phone]
n Europe: Tel. [phone], Fax[phone]

Visit www.macom.com for additional data sheets and product information.

Output Power, PAE, and VSWR vs. Frequency

45

40
35
30
25
20

(dBm) and η (%)

15

OUT

P

10

VSWR

5
0

1.7 1.8 1.9 2

ƒ

, Frequency (GHz)

η

P

OUT

P

= +2 dBm

IN

VDD = 3.6 V

4:1

3:1

2:1

1:1

Input VSWR

Part Description

V 1.0

, Output Power (dBm)
, Drain Current (A)

, Output Power (dBm)

, Dissipated Power (W)

3.6 V, 450 mW DECT RF Power Amplifier IC MA02203AD

Output Power and Current vs. Supply Voltage

Harmonics

30

25

P

OUT

20

I

15

DD

10

OUT

P

5

ƒ

=1.89 GHz

PIN = +2 dBm

0

2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6
VDD, Supply Voltage (V)

Output Power and Current vs. Frequency, Ts = -40oC

30

25

20

15

P

OUT

I

DD

0.6

0.5

0.4

0.3

0.2

0.1

0

0.6

0.5

0.4

0.3

30

ƒ

= 1.89 GHz

20

10

o

P

= +2 dBm

IN

VDD = 3.6 V

0

-10

DD

I

P

OUT

-20

-30

-40

ƒο 2ƒο 3ƒο 4ƒο 5ƒο

Frequency

Output Power and Current vs. Frequency, Ts = +75oC

30

25

20

15

P

OUT

I

DD

0.6

0.5

0.4

0.3

, Ouput Power (dBm)

10

OUT

P

5

Ts = -40 °C

0

1.7 1.8 1.9 2

ƒ

, Frequency (GHz)

P

= +2 dBm

IN

VDD = 3.6 V

Output Power and Current vs. Temperature

30

25

20

15

, Output Power (dBm)

10

OUT

P

PIN = +2 dBm
VDD = 3.6 V

5

0

-50 -25 0 25 50 75
TS, Operating Temperature (°C)

P

OUT

I

DD

, Drain Current (A)

0.2

DD

I

0.1

0

0.6

0.5

0.4

0.3

, Drain Current (A)

0.2

DD

I

0.1

0.0

, Ouput Power (dBm)

10

OUT

P

5

Ts = +75 °C

0

1.7 1.8 1.9 2

ƒ

, Frequency (GHz)

P

= +2 dBm

IN

VDD = 3.6 V

, Drain Current (A)

0.2

DD

I

0.1

0

Power Dissipation vs. Temperature

3.0

2.5

2.0

1.5

Slope = -1 / R

1.0

DISS

P

0.5

0.0
0 25 50 75 100 125 150 175

TS, Temperature at Solder Point of Pin 11 (°C)

TH J-S

Specifications subject to change without notice.

n North America: Tel. [phone]
n Asia/Pacific: Tel.[phone], Fax [phone]
n Europe: Tel. [phone], Fax[phone]

Visit www.macom.com for additional data sheets and product information.

Part Description

V 1.0

RF

INPUT

60mil GETEK Board

3.6 V, 450 mW DECT RF Power Amplifier IC MA02203AD

Application Schematic

+VDD

L1

1

N/C N/C

2

3

4 13

5

6

7 10

8

N/C N/C

List of components:

C1 = C2 = 100 pF DLI multilayer ceramic chip capacitor (C11AH101K5TXL)
L1 = 8.2 nH Coilcraft chip inductor (1008CT.080XKBB)
L2 = 27 nH Coilcraft chip inductor (1008CS.270XKBB)

C2C1

16

15

14

L2

RF OUTPUT

12

11

9

SOIC-16 Narrow Body Package

Dimensions in

Symbol

millimeters

Min Nom Max Min Nom Max

A 1.35 1.60 1.75 0.053 0.063 0.068
A1 0.10 0.25 0.004 0.010
A2 1.45 0.057

B 0.33 0.41 0.51 0.013 0.016 0.020

C 0.19 0.20 0.25 0.0075 0.008 0.0098
D 9.80 9.91 10.01 0.386 0.390 0.394

E 3.80 3.91 4.00 0.150 0.154 0.157

e 1.27 0.050

H 5.79 5.99 6.20 0.228 0.236 0.244

L 0.38 0.71 1.27 0.015 0.028 0.050

y 0.10 0.004

θ

0° 8° 0° 8°

NOTES:

1. Controlling dimension: inch

2. Lead frame material: copper alloy C151

3. Lead thickness after solder plating will be 0.013" maximum

4. Dimension “D” does not include mold flash, protrusions or gate
burrs

5. Dimension “E” does not include interlead flash or protrusions

6. Tolerance: ±0.010" unless otherwise specified

Dimensions in inches

Specifications subject to change without notice.

n North America: Tel. [phone]
n Asia/Pacific: Tel.[phone], Fax [phone]
n Europe: Tel. [phone], Fax[phone]