Datasheet M8934F2W, M8913F2Y, M8913F2W, M8913F1Y, M8913F1W Datasheet (SGS Thomson Microelectronics)

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M89 FAMILY
Multiple-Memory and Logic FLASH+PSD Systems for MCUs
DATA BRIEFING
Single Supply Voltage:
–5V±10% for M89xxFxY – 3 V (+20/–10%) for M89xxFxW
1 or2 Mbit of Primary Flash Memory (8 uniform
sectors, 16K x 8, or 32K x 8)
A second non-volatile memory:
– 256 Kbit (32K x 8) EEPROM (for M8913F1x)
or Flash memory (for M89x3F2x)
– 4 uniform sectors (8K x 8)
SRAM (16 Kbit, 2K x 8; or 64 Kbit, 8K x 8)
Over 2,000 Gates of PLD: DPLD and GPLD
27 Reconfigurable I/O ports
Enhanced JTAG Serial Port
Programmable power management
Stand-by current:
–50µA for M89xxFxY –25µA for M89xxFxW
High Endurance:
– 100,000 Erase/Write Cycles of Flash Memory – 10,000 Erase/Write Cycles of EEPROM – 1,000 Erase/Write Cycles of PLD
Figure 1. Logic Diagram
PQFP52 (T)
PLCC52 (K)
Table 1. Signal Names
PA0-PA7 Port-A PB0-PB7 Port-B
PC0-PC7
PD0-PD2 Port-D AD0-AD15 Address/Data CNTL0-CNTL2 Control RESET Reset V
CC
V
SS
June 2000
Complete data available on
Port-C PC2 = Voltage Stand-by
Supply Voltage Ground
Data-on-Disc CD-ROM
or at
www.st.com
V
CC
8
PA0-PA7
3
CNTL0-
8
PB0-PB7
CNTL2
FLASH+PSD
16
8
AD0-AD15 PC0-PC7
3
RESET
V
SS
PD0-PD2
AI02856
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M89 FAMILY
Figure 2A. PLCC Connections
RESET
PB7
CNTL1
CNTL2
CNTL0
47
48
49
50
51
AD15
46
AD14
45
AD13
44
AD12
43
AD11
42
AD10
41
AD9
40
AD8
39
VCC
38
AD7
37
AD6
36
AD5
35
AD4
34
PA0
AD1
AD2
AD3
AD0
AI02857
VCC GND
PD2 PD1 PD0 PC7 PC6 PC5 PC4
PC3 PC2 PC1 PC0
PB0
PB1
PB2
PB3
PB4
PB5
GND
PB6
52
2
34567
PA4
PA3
GND
1
PA2
PA1
8 9 10 11 12 13 14 15 16 17 18 19 20
21222324252627282930313233
PA7
PA6
PA5
DESCRIPTION
The FLASH+PSD family of memory systems for microcontrollers (MCUs) brings In-System­Programmability (ISP) to Flash memory and programmable logic. The result is a simple and flexible solution for embedded designs. FLASH+PSD devices combine many of the peripheral functions found in MCU based applications. FLASH+PSD provides a glueless interface to most commonly-used ROMless MCUs.
Table 2 summarizes all the devices in the M89 Family.
The FLASH+PSD device includes a JTAG Serial Programming interface, to allow In-System Programming (ISP) of the entire device. This
Figure 2B. PQFP Connections
PB0
PB1
PB2
PB3
PB4
PB5
GND
PB6
PB7
CNTL1
CNTL2
RESET
44
22
PA0
43
23
AD0
42
24
AD1
41
25
AD2
CNTLO
40
26
AD3
39 38 37 36 35 34 33 32 31 VCC 30 29 28 27 AD4
AD15 AD14 AD13 AD12 AD11 AD10 AD9 AD8
AD7 AD6 AD5
AI02858
PD2 PD1 PD0 PC7 PC6 PC5 PC4 VCC GND PC3 PC2 PC1 PC0
52
51
50
49
48
47
46
45
1 2 3 4 5 6 7 8 9 10 11 12 13
14
15
16
17
18
19
20
21
PA7
PA6
PA5
PA4
PA3
PA2
PA1
GND
feature reduces development time, simplifies the manufacturing flow, and dramatically lowers the cost of field upgrades. Using ST’s special Fast­JTAG programming, a design can be rapidly programmed into the FLASH+PSD.
The innovative FLASH+PSD family solves key problems faced by designers when managing discrete Flash memory devices, such as:
– Complex address decoding – In-System (first-time) Programming (ISP) – Concurrent EEPROM or Flash memory
programming (IAP).
The JTAG Serial Interface block allows In-System Programming (ISP). Embedded dual-bank memories eliminates the need for an external Boot
Table 2. Product Range
Part Number
Primary Flash
1
Memory
Secondary NVM
SRAM
2
I/O Ports Voltage Range Access Time
M8913F1Y 1 Mbit 256 Kbit EEPROM 16 Kbit 27 M8913F2Y 1 Mbit 256 Kbit Flash memory 16 Kbit 27
4.5-5.5 V
90 ns or
150 ns
M8934F2Y 2 Mbit 256 Kbit Flash memory 64 Kbit 27 M8913F1W 1 Mbit 256 Kbit EEPROM 16 Kbit 27
2.7-3.6 V 150 nsM8913F2W 1 Mbit 256 Kbit Flash memory 16 Kbit 27
M8934F2W 2 Mbit 256 Kbit Flash memory 64 Kbit 27
Note: 1. All products support: JTAG serial ISP, MCU parallel ISP, ISP Flash memory, ISP GPLD, Security features, Power Management
Unit (PMU), Automatic Power-down (APD)
2. SRAM may be backed up using an external battery.
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Figure 3. FLASH+PSD Block Diagram
)
PC2
(
VSTDBY
PA0 – PA7
PB0 – PB7
PC0 –PC7
M89 FAMILY
PD0 –PD2
ADDRESS/DATA/CONTROL BUS
MEMORY
1 OR 2 MBITMAIN FLASH
8 SECTORS
EMBEDDED
ALGORITHM
UNIT
POWER
MANGMT
256 KBITSECONDARY
SECTOR
4 SECTORS
FLASH MEMORY
(BOOT OR DATA)
SELECTS
)
DPLD
(
PLD
FLASH DECODE
SECTOR
SELECTS
PORT
PROG.
BACKUP SRAM
16 OR 64 KBIT BATTERY
SRAM SELECT
A
PORT
RUNTIME CONTROL
CSIOP
AND I/O REGISTERS
FLASH ISP PLD
PORT
PROG.
GPLD OUTPUT
(GPLD)
B
PORT
GPLD OUTPUT
PROG.
GPLD OUTPUT
PORT
C
PORT
I/O PORTPLD INPUT
PORT
PORT
PROG.
JTAG
SERIAL
PLD, CONFIGURATION
D
CHANNEL
LOADER
& FLASHMEMORY
PAGE
PLD
BUS
INPUT
REGISTER
PROG.
CNTL0,
CNTL1,
MCU BUS
CNTL2
57
INTRF.
ADIO
AD0 – AD15
PORT
57
GLOBAL
CONFIG. &
SECURITY
AI03765
Sometimes computers try to be too clever for theirown good. Take this illustration for instance. Just because somany of the labels are rotatedthrough ninety degrees, FrameMaker seems to want to insist on telling the postscript file that I would find it more convenient to see this page displayed inlandscape, rotated by ninety degrees. Well I wouldn’t. So I amputting inall this text just to weight the average in this direction.
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M89 FAMILY
EPROM or Flash memory, or an external programmer. To simplify Flash memory updates, program execution is performed from a secondary Flash memory (for the M89xxF2x) or EEPROM (for the M8913F1x) while the primary Flash memory is being updated. This solution avoids the complicated hardware and software overhead necessary to implement IAP.
ST makes available a software development tool, PSDsoft Express, that generates ANSI-C compliant code for use with your target MCU. This code allows you to manipulate the non-volatile memory (NVM) within the FLASH+PSD. Code examples are also provided for:
– Flash memory IAP via the UART of the host
MCU
– Memory paging to executecode across several
FLASH+PSD memory pages
FLASH+PSD ARCHITECTURAL OVERVIEW
FLASH+PSD devices contain several major functional blocks. Figure 3 shows the architecture of the M89 FLASH+PSD device family. The functions of each block are described briefly in the following sections. Many of the blocks perform multiple functions and are user configurable.
Memory
The 1 or 2 Mbit (128K x 8, or 256K x 8) Flash memory is the primary memory of the FLASH+PSD. It is divided into eight equally-sized sectors that are individually selectable.
The 256 Kbit (32K x 8) secondary EEPROM or Flash memory is divided into four equally-sized sectors. Each sector is individually selectable.
The SRAM is intended for use as a scratch-pad memory or as an extension to the MCU SRAM. If an external battery is connectedto Voltage Stand­by (VSTBY, PC2), data is retained in the event of power failure.
Each sector of memory can be located in a different address space as defined by the user. The access times for all memory types includes the address latching and DPLD decoding time.
The M8913F1x has 64 bytes of OTP memory for product identifiers, serial numbers, calibration constants, etc..
Page Register
The 8-bit Page Register expands the address range of the MCU by up to 256 times. The paged address can be used as part of the address space to access external memory and peripherals, or internal memory and I/O. The Page Register can also be used to change the address mapping of sectors of the Flash memories into different memory spaces for IAP.
PLDs
The device contains two PLDs, the Decode PLD (DPLD) and the General PLD (GPLD), each optimized for a different function, as shown in Table 3. The functional partitioning of the PLDs reduces power consumption, optimizes cost/ performance, and eases design entry.
The Decode PLD (DPLD) is used to decode addresses and to generate chip selects for the FLASH+PSD internal memory and registers. The DPLD has 14 combinatorial outputs, which are used to select memory sectors and internal registers. The General PLD (GPLD) can be used to implement user-defined external chip select signals and other combinatorial logic functions.
The PLDs consume minimal power. The speed and power consumption of the PLD is controlled by the Turbo bit in the PMMR0 register and other bits in the PMMR2 registers. These registers are set by the MCU at run-time. There is a slight penalty to PLD propagation time when invoking the power management features.
I/O Ports
The FLASH+PSD has 27 individually configurable I/O pins distributed over the four ports (Port A, B, C, and D). Each I/O pin can be individually configured for different functions. Ports can be configured as standard MCU I/O ports, PLD I/O, or latched address outputs for MCUs using multiplexed address/data buses. Ports A and B can be configured to be open drain.
The JTAG pins can be enabled on Port C for In­System Programming (ISP).
Port A can also be configured as a data port for a non-multiplexed bus.
MCU Bus Interface
FLASH+PSD interfaces easily with most 8-bit MCUs that have either multiplexed or non­multiplexed address/data buses. The device is configured to respond to the MCU’s control signals, which are also used asinputsto the PLDs. For examples, please see the full data sheet.
JTAG Port
In-System Programming (ISP) can be performed through the JTAG signals on Port C. This serial interface allows complete programming of the entire FLASH+PSD device. A blank device can be completely programmed for the first time after it is soldered to the board. The JTAG signals (TMS, TCK, TSTAT, TERR, TDI, TDO) can be multiplexed with other functions on Port C. Table 4 indicates the JTAG pin assignments. Four-pin JTAG is also fully supported.
In-System Programming (ISP)
Using the JTAG signals on Port C, the entire FLASH+PSD device can be programmed or
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M89 FAMILY
Table 3. PLD I/O
Name Inputs Outputs
Decode PLD (DPLD) 57 14 39 General PLD (GPLD) 57 19 114
Product
Terms
erased without the use of the MCU. The primary Flash memory can also be programmed in-system by the MCU executing the programming algorithms out of the secondary memory, or SRAM. The secondary memory can be programmed thesameway by executing out of the primary Flash memory. The PLD or other FLASH+PSD Configuration blocks can be programmed through the JTAG port or a device insertion programmer. Table 5 indicates which programming methods can program different functional blocks of the FLASH+PSD.
Power Management Unit (PMU)
The Power Management Unit (PMU) gives the user controlof the power consumption on selected functional blocks based on system requirements. The PMU includes an Automatic Power-down (APD) Unit that turns off device functions during MCU inactivity. The APD Unit has a Power-down mode that helps reduce power consumption.
The FLASH+PSD also has some bits that are configured at run-time by the MCU to reduce power consumption of the GPLD. The Turbo bit in the PMMR0 register can be reset to 0 and the GPLD latches its outputs and goes to sleep until the next transition on its inputs.
Additionally, bits in thePMMR2 register can beset by the MCU to block signals from entering the GPLD to reduce power consumption. Please see the full data sheet for details.
Table 4. JTAG SIgnals on Port C
Port C Pins JTAG Signal
PC0 TMS PC1 TCK PC3 TSTAT PC4 TERR PC5 TDI PC6 TDO
accessed from the MCU. The only way a security bit can be cleared is to erase the entire chip.
The contents of the sectors of the primary and secondary NVM blocks can beprotectedusingbits in the Protection Registers. These bits are accessible from the MCU in the application code, or from a programmer during the set-up procedure.
SECURITY AND NVM SECTOR PROTECTION
A security bit in the Protection Register enables the software project, coded in the FLASH+PSD, to be locked up. This bit is only accessible by the system designerfromtheJTAG serialport, or from a parallel insertion programmer. It cannot be
Table 5. Methods of Programming Different Functional Blocks of the FLASH+PSD
Functional Block JTAG Programming Device Programmer IAP
Primary Flash Memory Yes Yes Yes Secondary EEPROM or Flash memory Yes Yes Yes PLD Array (DPLD and GPLD) Yes Yes No FLASH+PSD Configuration Yes Yes No OTP Row No Yes Yes
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M89 FAMILY
Table 6. Ordering Information Scheme
Example: M89 1 3 F 1 W – 15 T 1 T
SRAM Capacity Option
1 16 Kbit T Tape& Reel Packing 3 64 Kbit
Temperature Range
Flash Memory Capacity 10to70°C (commercial)
3 1 Mbit (128K x 8) 6 –40 to 85 °C (industrial) 4 2 Mbit (256K x 8)
2nd Non Volatile Memory Package
1 256 Kbit EEPROM K PLCC52 2 256 Kbit Flash memory T PQFP52
Operating Voltage Speed
4.5 V to 5.5 V
Y W 2.7 V to 3.6 V -15 150 ns
Note: 1. Available on the 4.5 to 5.5 V range, only.
-90
90 ns
ORDERING INFORMATION SCHEME
When delivered from ST, the FLASH+PSD device has all bits in the memory and PLDs set to 1. The FLASH+PSD Configuration Registerbits are setto
0. The code, configuration, and PLD logic are loaded using the programming procedure. Information for programming the device is available directly from ST. Please contact your local sales representative.
The notation used for the device number is as shown in Table 6. For a list of available options (speed, package, etc.) or for further information on any aspect of this device, please see the full data sheet (please consult our pages on the world wide web:
www.st.com/flashpsd
). Alternatively, please
contact your nearest ST Sales Office.
1
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M89 FAMILY
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of useof such information norfor any infringement ofpatents or other rights of thirdparties which may result from its use.No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use ascritical components in life support devices or systems without express writtenapproval of STMicroelectronics.
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