Page 1
1
Base
2
Emitter
3
1111
Emitter
A
CE
F
D
G
H
J
B
FEATURE
Power Dissipation
Elektronische Bauelemente
A suffix of “-C” specifies halogen & lead-free
RoHS Compliant Product
M8550T
-0.8A , -40V
PNP Plastic Encapsulated Transistor
TO-92
2
2Base
22
3
3Collector
33
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Ratings Unit
Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current - Continuous IC -800 mA
Collector Power Dissipation PC 625 mW
Junction, Storage Temperature TJ, T
(TA = 25°C unless otherwise specified)
-40 V
CBO
-25 V
CEO
-6 V
EBO
125, -55~125 °C
STG
ELECTRICAL CHARACTERISTICS
Parameter Symbol Min. Typ. Max. Unit
Collector to Base Breakdown Voltage V
Collector to Emitter Breakdown Voltage V
Emitter to Base Breakdown Voltage V
Collector Cut-Off Current I
Collector Cut-Off Current I
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage V
Transition Frequency fT 80 - - MHz VCE=-6V, IC=-20mA, f=30MHz
*Pulse Test：pulse width 300 µ≦ s, duty cycle ≦ 2%.
(TA = 25°C unless otherwise specified)
Test condition
-40 - - V IC=100µA, IE=0
(BR)CBO
-25 - - V IC=0.1mA, IB=0
(BR)CEO
-6 - - V IE=100µA, IC=0
(BR)EBO
- - -0.1 µA VCB=-35V, IE=0
CBO
- - -0.1 µA VCE=-20V, IB=0
CEO
h
45 - - VCE=-1V, IC=-5mA
FE(1)
h
80 - 400 VCE=-1V, IC=-100mA
FE(2)
h
40 - - VCE=-1V, IC=-800mA
FE(3)
V
- - -0.5 V IC=-800mA, IB=-80mA
CE(sat)
- - -1.2 V IC=-800mA, IB=-80mA
BE(sat)
Collector
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
29-Apr-2011 Rev. A Page 1 of 2
Page 2
Elektronische Bauelemente
CHARACTERISTIC CURVES
M8550T
-0.8A , -40V
PNP Plastic Encapsulated Transistor
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
29-Apr-2011 Rev. A Page 2 of 2
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