Page 1
M8050L
Lead(Pb)-Free
P b
T1
NPN General Purpose Transistors
V
CEO
3
1
2
SOT-23
Value
25
40
5.0
800
300
2.4
417
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4.0
35
100
100
0.1
25
40
5.0
0.15
0.15
1/4 15-Jul-10
u
u
Page 2
M8050LT1
ELECTRICAL CHARACTERISTICS
Characteristics
ON CHARACTERISTICS
DC Current Gain
(IC=100 mAdc,VCE=1.0 Vdc)
Collector-Emitter Saturation Voltage
(IC=800 mAdc, IB=80mAdc)
CLASSIFICATION OF h
Rank
Range
100-200
Marking
FE(1)
P
80P
(TA=25 C unless otherwise noted) (Countinued)
Q
150-300
1YC
Symbol
h
FE
V
CE(sat)
200-400
(1)
R
1YE
Min
100
Max
600
-
0.5
UnitM
-
Vdc
S
300-600
80S
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Page 3
M8050LT1
FIG.5 - Capacitance & Reverse-Biased Voltage
1
10
100
0.1 1 10 100
Reverse-Biased Voltage (V)
Capacitance (pF)
Cob
FIG.4 - Cutoff Frequency & Collector Current
1
10
100
1000
1 10 100 1000
Collector Current (mA)
Cutoff Frequency (MHz)
VCE=10V
FIG.3 - On Voltage & Collector Current
0.1
1
0.01 0.1 1 10 100 1000
Collector Current (mA)
On Voltage (V)
V
BE(ON)
@ VCE=1V
FIG.1 - Current Gain & Collector Current
1
10
100
1000
0.001 0.01 0.1 1 10 100 1000
Collector Current (mA)
hFE
VCE=1V
FIG.2 - Saturation Voltage & Collector Current
0.01
0.1
1
0.01 0.1 1 10 100 1000
Collector Current (mA)
Saturation Voltage (V)
V
CE(sat)
@ IC=10I
B
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Page 4
M8050LT1
SOT-23 Outline Dimension
SOT-23
A
B
TOP VIEW
D
E
G
H
C
K
L
J
M
Dim
A
B
C
D
E
G
H
J
K
L
M
Min
0.35
1.19
2.10
0.85
0.46
1.70
2.70
0.01
0.89
0.30
0.076
Max
0.51
1.40
3.00
1.05
1.00
2.10
3.10
0.13
1.10
0.61
0.25
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