Datasheet M74HCT86M1R, M74HCT86B1R, M74HCT86TTR, M74HCT86RM13TR Datasheet (SGS Thomson Microelectronics)

M74HCT86

QUAD EXCLUSIVE OR GATE

■ HIGH SPEED:

t

= 15ns (TYP.) at VCC = 4.5V

PD

■ LOW POWER DISSIPATION:

I

= 1µA(MAX.) at TA=25°C

CC

■ COMPA TIBLE WITH TTL OUTPUTS :

V

= 2V (MIN.) VIL = 0.8V (MAX)

IH

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

| = IOL = 4mA (MIN)

OH

■ BALANCED PROPAGATION DELAYS:

t

≅ t

PHL

PLH

■ PIN AND FUNCTION COMPATIBLE WITH

74 SERIES 86

DESCRIPTION

The M74HCT86 is an high speed CMOS QUA D
EXCLUSIVE OR GATE fabricated with silicon
gate C

2

MOS technology.
Input and output buffer are installed, which
enables high noise immunity and stable output.
The M74HCT86 is designed to directly interface

2

HSC

MOS systems with TTL and NMOS

components.

TSSOPDIP SOP

ORDER CODES

PACKAGE TUBE T & R

DIP M74HCT86B1R

SOP M74HCT86M1R M74HCT86RM13TR

TSSOP M74HCT86TTR

All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.

PIN CONNECTION AND IEC LOGIC SYMBOLS

1/8September 2001

M74HCT86

INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

PIN No SYMBOL NAME AND FUNCTION

1, 4, 9, 12 1A to 4A Data Inputs

2, 5, 10, 13 1B to 4B Data Inputs

3, 6, 8, 11 1Y to 4Y Data Outputs

7 GND Ground (0V)

14

V

CC

TRUTH TABLE

ABY

LLL

LHH
HLH
HHL

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V

V

I

I

OK

I

I

or I

CC

P

T

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
(*) 500mW at 65

Supply Voltage

CC

DC Input Voltage -0.5 to VCC + 0.5

I

DC Output Voltage -0.5 to VCC + 0.5

O

DC Input Diode Current

IK

DC Output Diode Current
DC Output Current

O

DC VCC or Ground Current

GND

Power Dissipation

D

Storage Temperature

stg

Lead Temperature (10 sec)

L

°C; derate to 300mW by 10mW/°C from 65°C to 85°C

Positive Supply Voltage

-0.5 to +7 V
V
V

± 20 mA
± 20 mA
± 25 mA
± 50 mA

500(*) mW

-65 to +150 °C

300 °C

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Value Unit

2/8

V

V

V
T
t

r

Supply Voltage

CC

Input Voltage 0 to V

I

Output Voltage 0 to V

O

Operating Temperature

op

, t

Input Rise and Fall Time (VCC = 4.5 to 5.5V)

f

4.5 to 5.5 V

CC
CC

-55 to 125 °C
0 to 500 ns

V
V

DC SPECIFICATIONS

Symbol Parameter

V

V

V

V

I

∆ I

High Level Input

IH

Voltage

Low Level Input

IL

Voltage

High Level Output

OH

Voltage
Low Level Output

OL

Voltage

I

Input Leakage

I

Current
Quiescent Supply

CC

Current
Additional Worst

CC

Case Supply
Current

Test Condition Value

T

= 25°C

V

CC

(V)

A

Min. Typ. Max. Min. Max. Min. Max.

4.5
to

2.0 2.0 2.0 V

5.5

4.5
to

0.8 0.8 0.8 V

5.5

4.5

4.5

5.5

5.5

IO=-20 µA

I

=-4.0 mA

O

IO=20 µA

I

=4.0 mA

O

= VCC or GND

V

I

= VCC or GND

V

I

5.5 Per Input pin

V

= 0.5V or

I

V

= 2.4V

I

4.4 4.5 4.4 4.4

4.18 4.31 4.13 4.10

0.0 0.1 0.1 0.1

0.17 0.26 0.33 0.40
± 0.1 ± 1 ± 1 µA

2.0 2.9 3.0 mA

Other Inputs at

V

or GND

CC

I

= 0

O

M74HCT86

-40 to 85°C -55 to 125°C

11020µA

Unit

V

V

AC ELECTRICAL CHARACTERISTICS (C

= 50 pF, Input tr = tf = 6ns)

L

Test Condition Value

Symbol Parameter

t

TLH tTHL

t

PLH tPHL

Output Transition
Time

Propagation Delay
Time

= 25°C

V

CC

(V)

A

Min. Typ. Max. Min. Max. Min. Max.

4.5 8151923ns

4.5 15 24 30 36 ns

-40 to 85°C -55 to 125°C

Unit

T

CAPACITIVE CHARACTERISTICS

Test Condition Value

T

Symbol Parameter

C

C

Input Capacitance

IN

Power Dissipation

PD

Capacitance (note

V

CC

(V)

= 25°C

A

Min. Typ. Max. Min. Max. Min. Max.

5101010pF

48 pF

1)

1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without

load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I

-40 to 85°C -55 to 125°C

= CPD x VCC x fIN + ICC/4 (per gate)

CC(opr)

Unit

3/8

M74HCT86

TEST CIRCUIT

CL = 50pF or equivalent (in cludes jig and p robe capacit ance)

= Z

R

WAVEFORM : PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle)

of pulse generator (typically 50Ω)

T

OUT

4/8

M74HCT86

Plastic DIP-14 MECHANICAL DATA

mm. inch

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

a1 0.51 0.020

B 1.39 1.65 0.055 0.065
b 0.5 0.020

b1 0.25 0.010

D 20 0.787
E 8.5 0.335

e 2.54 0.100

e3 15.24 0.600

F 7.1 0.280

I 5.1 0.201

L 3.3 0.130

Z 1.27 2.54 0.050 0.100

P001A

5/8

M74HCT86

SO-14 MECHANICAL DATA

DIM.

A 1.75 0.068
a1 0.1 0.2 0.003 0.007
a2 1.65 0.064

b 0.35 0.46 0.013 0.018

b1 0.19 0.25 0.007 0.010

C 0.5 0.019
c1 45° (typ.)

D 8.55 8.75 0.336 0.344

E 5.8 6.2 0.228 0.244

e 1.27 0.050

e3 7.62 0.300

F 3.8 4.0 0.149 0.157

G 4.6 5.3 0.181 0.208

L 0.5 1.27 0.019 0.050

M 0.68 0.026

S8° (max.)

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

6/8

PO13G

M74HCT86

TSSOP14 MECHANICAL DATA

mm. inch

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

A 1.2 0.047

A1 0.05 0.15 0.002 0.004 0.006

A2 0.8 1 1.05 0.031 0.039 0.041

b 0.19 0.30 0.007 0.012

c 0.09 0.20 0.004 0.0089

D 4.9 5 5.1 0.193 0.197 0.201

E 6.2 6.4 6.6 0.244 0.252 0.260

E1 4.3 4.4 4.48 0.169 0.173 0.176

e 0.65 BSC 0.0256 BSC

K0° 8°0° 8°

L 0.45 0.60 0.75 0.018 0.024 0.030

A2

A

A1

b

e

c

K

L

E

D

E1

PIN 1 IDENTIFICATION

1

0080337D

7/8

M74HCT86

Information furnished is bel ieved to be accurate and reliable. However, STMicroe lectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No li cense is granted by implication or otherwise unde r any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication ar e subject to change without notice. This publication supersedes and replaces all information
previously supplied. S TMicroelectronics products are not authorized for use as critica l components in life suppo rt devices or
systems without express written approval of STMicroelectronics.

Australi a - Brazil - Chi na - Finland - F rance - Germ any - Hong Kon g - India - Italy - Japan - Mal aysia - Malta - Morocco

© The ST logo is a registered trademark of STMicroelectronics

© 2001 STM icroelectronics - Pr i n ted in Italy - A ll Rights Res er ved

STMicr o el ectronics GROUP OF COMPANI ES

Singapo re - Spain - Sweden - Swit zerland - Un i ted Kingdom

© http://www.st.com

8/8