TheM54/74HCT7 5isahighspeedCMOS4-BITD-TYP E
LATCH fabricatedin silicongate C2MOStechnology. It
has the same high speed performa nce of LSTTL combined withtrueCMOS lowpower consumption. It contains
two groups of 2-bi t latches control led by an enable input
(G1 • 2orG3•4). These two latch groups can be used
indifferentcir cuits.Each latch has Qand Q outputs (1Q 4Qand1Q - 4Q).The dataapplied to thedata input is
transfere d to theQ and Q outputswhen theenable input
is taken high and the outputs will follow the data input as
long as the enab le input is kept high. When the enabl e
input is taken low,the information data applied to the data
input isretained at the outputs. Allinputs areequipped with
protection circuits against static discharge and transi ent
excessvoltage .Thisintegr atedcircu ithasinp utandoutput
characteris ticsthat arefullycompatiblewith54/74LSTTL
logic families. M54/74HCT devices are designed to directlyinterfac eHSC2MOSsystemswithTTLandNMOS
componen ts. They are also plug in replaceme n ts for
LSTTLdevices givinga reductionof powercons umptio n.
Supply Voltage-0.5 to +7V
DC Input Voltage-0.5 to VCC+ 0.5V
I
DC Output Voltage-0.5 to VCC+ 0.5V
DC Input Diode Current± 20mA
DC Output Diode Current± 20mA
DC Output Source Sink Current Per Output Pin± 25mA
DC VCCor Ground Current± 50mA
GND
Power Dissipation500 (*)mW
Storage Temperature-65 to +150
Lead Temperature (10 sec)300
o
C
o
C
Page 3
M54/M74HCT75
RECO MM ENDED OPERATI N G C ONDI TIONS
SymbolParameterValueUnit
V
V
V
T
t
r,tf
DC SPECIF ICATIO NS
SymbolParameter
V
V
V
OH
V
OL
I
I
CC
∆I
Supply Voltage4.5 to 5.5V
CC
Input Voltage0 to V
I
Output Voltage0 to V
O
Operating Temperature: M54HC Series
op
M74HC Series
CC
CC
-55 to +125
-40 to +85
Input Rise and Fall Time (VCC= 4.5 to 5.5V)0 to 500ns
Test ConditionsValue
T
High Level Input
IH
Voltage
V
(V)
4.5
=25oC
CC
A
54HC and 74HC
Min.Typ.Max.Min.Max.Min.Max.
2.02.02.0V
to
-40 to 85oC
74HC
-55 to 125oC
5.5
Low Level Input
IL
Voltage
4.5
to
0.80.80.8V
5.5
High Level
Output Voltage
Low Level Output
Voltage
Input Leakage
I
Current
Quiescent Supply
VI=
IO=-20 µA4.44.54.44.4
V
IH
4.5
or
I
=-4.0 mA 4.184.314.134.10
O
V
IL
VI=
IO=20µA0.00.10.10.1
V
IH
4.5
or
I
= 4.0 mA0.170.260.330.4
O
V
IL
VI=VCCor GND±0.1±1±1µA
5.5
5.5 VI=VCCor GND22040µA
Current
Additional worst
CC
case supply
current
5.5Per Input pin
V
= 0.5V or
I
VI= 2.4V
2.02.93.0mA
Other Inputs at
VCCor GND
IO=0
54HC
V
V
o
C
o
C
Unit
V
V
3/9
Page 4
M54/M74HCT75
AC ELECTRICAL CHARACTERISTICS (CL=50pF,Inputtr=tf=6ns)
Test ConditionsValue
T
=25oC
SymbolParameter
t
t
t
t
TLH
THL
PLH
PHL
Output Transition
Time
Propagation
Delay Time
V
CC
(V)
4.58151922
4.518283542
A
54HC and 74HC
Min.Typ.Max.Min.Max.Min.Max.
(DATA-Q)
t
t
PLH
PHL
Propagation
Delay Time
4.521334150
(G-Q)
t
W(H)
Minimum Pulse
4.58151922
Width (G)
t
Minimum Set-up
s
4.54101315
Time
t
h
Minimum Hold
4.5558
Time
C
C
PD
Input Capacitance5101010pF
IN
(*)Power Dissipation
61
Capacitance
(*) CPDisdefined as the valueof the IC’s internal equivalent capacitance which is calculatedfromthe operatingcurrent consumption without load.
(Referto Test Circuit).Average operting current can be obtained bythefollowingequation. ICC(opr) = CPD•VCC•fIN+I
-40 to 85oC
74HC
-55 to 125oC
54HC
CC
Unit
ns
ns
ns
ns
ns
ns
pF
SWITCHING CHARACTERISTICS TEST
WAVEFORM
TEST CIRCUIT ICC(Opr)
* INPUT WAVEFORM IS THE SAME AS THAT IN CASE OF
SWITCHINGCHARACTERISTICSTEST.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted byimplication or otherwise under any patent or patentrights of SGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
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