Datasheet M74HCT643, M74HCT640, M74HCT245 Datasheet (SGS Thomson Microelectronics)

M54/74HCT245/640/643
M54/74HCT245/640/643

OCTAL BUS TRANSCEIVER (3-STATE): HCT245 NON INVERTING

HCT640 INVERTING, HCT643 INVERTING/NON INVERTING

.HIGH SPEED

tPD= 10 ns(TYP.) at VCC=5V

.LOWPOWERDISSIPATION

ICC=4µA (MAX.) at TA=25oC

.COMPATIBLE WITHTTL OUTPUTS

VIH= 2V (MIN.)VIL= 0.8V (MAX.)

.OUTPUT DRIVE CAPABILITY

15 LSTTL LOADS

B1R

(PlasticPackage)

F1R

(CeramicPackage)

.SYMMETRICALOUTPUT IMPEDANCE

|IOH|=IOL=6 mA(MIN)

.BALANCEDPROPAGATION DELAYS

t

PLH=tPHL

.PIN ANDFUNCTION COMPATIBLE

WITH 54/74LS245/640/643

DESCRIPTION

The M54/74HCT245, HCT640 and HCT643 utilise
silicongate C2MOS technology toachive operating
speedseqivalent to LSTTL devices.
Alongwith thelow power dissipationandhighnoise
immunity of standad CMOS integrated circuit, it
possesses the capability to drive 15 LSTTL loads.
TheseIC’s are intended fortwo-way asynchronous
communication between data buses, and the
direction of data trasmission is determined by DIR
input. The enable input (G) can be usedto disable
the device sothatthe busesare effectively isolated.
All input are equipped with protection circuits
against static discharge and transient discharge.
These integrated circuits have input and output

characteristics that are fully compatible with 54/74
LSTTL logic families. M54/74HCT devices are
designed to directly interface HSC2MOS systems
with TTL and NMOS components. They are also
plug in replacements for LSTTL devices giving a
reduction of powerconsumption.
IT IS PROHIBITED TO APPLY A SIGNAL TO A
BUS TERMINAL WHEN IT IS IN OUTPUT MODE
AND WHEN A BUS THERMINAL IS FLOATING
(HIGH IMPEDANCE STATE), IT IS REQUESTED
TO FIX THE INPUT LEVEL BY MEANS OF
EXTERNAL PULL DOWN OR PULL UP
RESISTOR.

M1R

(MicroPackage)

ORDER CODE S :

M54HC TXX X F1R M74HC TXX X M1R
M74HC TXXXB1 R M7 4HCT XXXC1 R

C1R

(Chip Carrier)

PIN CONNECTION (top view)

HCT245 HCT640 HCT643

October 1993

1/11

M54/M74HCT245/640/643

INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

PIN No SYMBOL NAME AND FUNCTION

1 DIR Directional Control

2, 3, 4, 5,

6, 7, 8, 9

18, 17, 16,
15, 14, 13,

12, 11

19 G Output Enabel Input

10 GND Ground (0V)
20 V

IEC LOGIC SYMBOLS

HCT245 HCT640 HCT643

A1 to A8 Data Inputs/Outputs

B1 to B8 Data Inputs/Outputs

CC

(Active LOW)

Positive Supply Voltage

TRUTH TABLE

INPUT FUNCTION OUTPUT

G DIR A BUS B BUS HCT245 HCT640 HCT643

L L OUTPUT INPUT A = B A = B A = B
L H INPUT OUTPUT B = A B = A B = A

HXZZZZZ

X: ”H” or”L”
Z: High impedance

2/11

LOGIC DIAGRAM (HCT640)

M54/M74HCT245/640/643

NOTE:IN CASE OF HCT245OR HCT643,INPUTINVERTERSMARKED* AT A BUSAND B BUS AREELIMINATEDRESPECTIVELY

ABSOLU TE M AXIMU M R AT ING S

Symbol Parameter Value Unit

V

CC

V

V

O

I

IK

I

OK

I

O

I

or I

CC

P

D

T

stg

T

AbsoluteMaximumRatingsarethose values beyondwhichdamage tothedevicemayoccur. Functional operationunder these conditionisnotimplied.
(*)500 mW: ≅ 65oC derateto300 mWby 10mW/oC: 65oCto85oC

Supply Voltage -0.5 to +7 V
DC Input Voltage -0.5 to VCC+ 0.5 V

I

DC Output Voltage -0.5 to VCC+ 0.5 V
DC Input Diode Current ± 20 mA
DC Output Diode Current ± 20 mA
DC Output Source Sink Current Per Output Pin ± 35 mA
DC VCCor Ground Current ± 70 mA

GND

Power Dissipation 500 (*) mW
Storage Temperature -65 to +150
Lead Temperature (10sec) 300

L

o

C

o

C

3/11

M54/M74HCT245/640/643

RECO MM ENDED OPERAT IN G CO NDITI ONS

Symbol Parameter Value Unit

V

V

V

T

t

r,tf

DC SPECIFICATIONS

Symbol Parameter

V

V

V

OH

V

OL

I

I

OZ

I

CC

∆I

Supply Voltage 4.5 to 5.5 V

CC

Input Voltage 0 to V

I

Output Voltage 0 to V

O

Operating Temperature: M54HC Series

op

M74HC Series

CC
CC

-55 to +125

-40 to +85

Input Rise and Fall Time (VCC= 4.5 to 5.5V) 0 to 500 ns

Test Conditions Value

T

High Level Input

IH

Voltage

V

(V)

4.5

=25oC

CC

A

54HC and 74HC

Min. Typ. Max. Min. Max. Min. Max.

2.0 2.0 2.0 V

to

-40 to 85oC
74HC

-55 to 125oC

5.5

Low Level Input

IL

Voltage

4.5
to

0.8 0.8 0.8 V

5.5

High Level
Output Voltage

Low Level Output
Voltage

Input Leakage

I

Current
3 State Output

VI=

IO=-20 µA 4.4 4.5 4.4 4.4

V

IH

4.5

or

I

=-6.0 mA 4.18 4.31 4.13 4.10

O

V

IL

VI=

IO=20µA 0.0 0.1 0.1 0.1

V

IH

4.5

or

I

= 6.0 mA 0.17 0.26 0.33 0.4

O

V

IL

VI=VCCor GND ±0.1 ±1 ±1 µA

5.5

5.5 VI=VCCor GND ±0.5 ±5.0 ±10 µA

Off State Current
Quiescent Supply

5.5 VI=VCCor GND 4 40 80 µA

Current
Additional worst

CC

case supply
current

5.5 Per Input pin

VI= 0.5V or

V

= 2.4V

I

2.0 2.9 3.0 mA

Other Inputs at

VCCor GND

IO=0

54HC

V
V

o

C

o

C

Unit

V

V

4/11

M54/M74HCT245/640/643

AC ELECTRICAL CHARACTERISTICS (CL=50pF,Inputtr=tf=6ns)

Test Conditions Value

T

=25oC

Symbol Parameter

C

t

TLH

t

THL

t

PLH

t

PHL

t

PZL

t

PZH

t

PLZ

t

PHZ

C

I/OUT

Output Transition
Time

Propagation
Delay Time

Output Enable
Time

Output Disable
Time

Input Capacitance DIR, G 5 10 10 10 pF

IN

Output

V

C

CC

(V)

L

(pF)

4.5 50 7 12 15 18 ns

4.5 50 13 22 28 33 ns

4.5 150 18 30 38 45 ns

4.5 50 RL=1KΩ 19 30 38 45 ns

4.5 150 R

=1KΩ 24 38 48 57 ns

L

4.5 50 RL=1KΩ 17 30 38 45

An, Bn 13

A

54HC and 74HC

Min. Typ. Max. Min. Max. Min. Max.

Capacitance

C

(*) Power Dissipation

PD

Capacitance

(*) CPDisdefined as the value ofthe IC’sinternal equivalent capacitance whichis calculated fromthe operatingcurrent consumption without load.
(Referto Test Circuit). Average opertingcurrent can beobtained by the followingequation. ICC(opr) = CPD•VCC•fIN+ICC/8(per circuit)

HCT245

HCT640/643

41
39

-40 to 85oC
74HC

-55 to 125oC
54HC

Unit

ns

pF

pF

SWITCHING CHARACTERISTICS TEST WAVEFORM

5/11

M54/M74HCT245/640/643

TEST CIRCUIT ICC(Opr.) CPDCALCULATION

CPDis to be calculated with the following
formula by using the measured value of I
(Opr.)in thetest circuit opposite.

CPD=

In determining the value of CPD, a relatively
high frequency of 1MHzwas applied to fIN,in
orther to eliminate any error caused by the
quiescent supply current.

I

(

Opr

CC

fINxV

CC

.)

CC

6/11

M54/M74HCT245/640/643

Plastic DIP20 (0.25) MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

a1 0.254 0.010

B 1.39 1.65 0.055 0.065
b 0.45 0.018

b1 0.25 0.010

D 25.4 1.000

E 8.5 0.335
e 2.54 0.100

e3 22.86 0.900

F 7.1 0.280

I 3.93 0.155
L 3.3 0.130
Z 1.34 0.053

mm inch

P001J

7/11

M54/M74HCT245/640/643

Ceramic DIP20 MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 25 0.984
B 7.8 0.307

D 3.3 0.130

E 0.5 1.78 0.020 0.070

e3 22.86 0.900

F 2.29 2.79 0.090 0.110

G 0.4 0.55 0.016 0.022

I 1.27 1.52 0.050 0.060
L 0.22 0.31 0.009 0.012

M 0.51 1.27 0.020 0.050

N1 4° (min.), 15° (max.)

P 7.9 8.13 0.311 0.320

Q 5.71 0.225

mm inch

8/11

P057H

SO20 MECHANICAL DATA

M54/M74HCT245/640/643

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 2.65 0.104

a1 0.10 0.20 0.004 0.007
a2 2.45 0.096

b 0.35 0.49 0.013 0.019

b1 0.23 0.32 0.009 0.012

C 0.50 0.020

c1 45° (typ.)

D 12.60 13.00 0.496 0.512

E 10.00 10.65 0.393 0.419
e 1.27 0.050

e3 11.43 0.450

F 7.40 7.60 0.291 0.299
L 0.50 1.27 0.19 0.050

M 0.75 0.029

S8°(max.)

mm inch

P013L

9/11

M54/M74HCT245/640/643

PLCC20 MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 9.78 10.03 0.385 0.395
B 8.89 9.04 0.350 0.356

D 4.2 4.57 0.165 0.180
d1 2.54 0.100
d2 0.56 0.022

E 7.37 8.38 0.290 0.330
e 1.27 0.050

e3 5.08 0.200

F 0.38 0.015
G 0.101 0.004
M 1.27 0.050

M1 1.14 0.045

mm inch

10/11

P027A

M54/M74HCT245/640/643

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consequences of useof suchinformation nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted byimplication or otherwiseunder any patentor patentrights ofSGS-THOMSON Microelectronics.Specificationsmentioned
in thispublication are subjectto changewithout notice. This publication supersedes andreplaces all information previouslysupplied.
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written approval of SGS-THOMSON Microelectonics.

 1994SGS-THOMSON Microelectronics- All Rights Reserved

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