Datasheet M74HCT640 Datasheet (ST)

Page 1
M74HCT640
OCTAL BUS TRANSCEIVER
WITH 3 STATE OUTPUTS (INVERTED)
■ HIGH SPEED:
t
= 13ns (TYP.) at VCC = 4.5V
PD
■ LOW POWER DISSIPATION:
I
= 4µA(MAX.) at TA=25°C
CC
■ COMPA TIBLE WITH TTL OUTPUTS :
V
= 2V (MIN.) VIL = 0.8V (MAX)
IH
■ SYMMETRICAL OUTPUT IMPEDANCE:
|I
| = IOL = 6mA (MIN)
OH
■ BALANCED PROPAGATION DELAYS:
t
≅ t
PHL
PLH
■ PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 640
DESCRIPTION
The M74HCT640 is an advanced high-speed CMOS OCTAL BUS TRANSCEIVER (3-STATE) fabricated with silicon gate C
2
MOS technology. This IC is intended for two-way asynchronous communication between data buses, and the direction of data transmission is determined by DIR input. The enable input G
can be used to disable the device so that the buses are effectively isolated.
TSSOPDIP SOP
ORDER CODES
PACKAGE TUBE T & R
DIP M74HCT640B1R
SOP M74HCT640M1R M74HCT640RM13TR
TSSOP M74HCT640TTR
All inputs are equipped with protection circuits against static discharge and transient excess voltage. All floating bus terminals during High Z State must be held HIGH or LOW.
PIN CONNECTION AND IEC LOGIC SYMBOLS
1/11August 2001
Page 2
M74HCT640
INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
1 DIR Directional Control
2, 3, 4, 5, 6,
7, 8, 9
18, 17, 16, 15, 14, 13,
12, 11
19 G 10 GND Ground (0V) 20 V
TRUTH TABLE
A1 to A8 Data Inputs/Outputs
B1 to B8 Data Inputs/Outputs
CC
Output Enable Input
Positive Supply Voltage
INPUTS FUNCTION
G
L L OUTPUT INPUT A = B L H INPUT OUTPUT B = A
HXZZZ
X : Don’t Care Z : High Impedance
LOGIC DIAGRAM
DIR A BUS B BUS
OUTPUT
This log i c diagram has not be used to esti m ate propagation delays
2/11
Page 3
M74HCT640
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
OK
I
I
or I
CC
P
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied (*) 500mW at 65
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V
V
V T t
r
Supply Voltage
CC
DC Input Voltage -0.5 to VCC + 0.5
I
DC Output Voltage -0.5 to VCC + 0.5
O
DC Input Diode Current
IK
DC Output Diode Current DC Output Current
O
DC VCC or Ground Current
GND
Power Dissipation
D
Storage Temperature
stg
Lead Temperature (10 sec)
L
°C; derate to 300mW by 10mW/°C from 65°C to 85°C
Supply Voltage
CC
Input Voltage 0 to V
I
Output Voltage 0 to V
O
Operating Temperature
op
, t
Input Rise and Fall Time (VCC = 4.5 to 5.5V)
f
-0.5 to +7 V
± 20 mA ± 20 mA ± 35 mA ± 70 mA
500(*) mW
-65 to +150 °C
300 °C
4.5 to 5.5 V
CC CC
-55 to 125 °C 0 to 500 ns
V V
V V
3/11
Page 4
M74HCT640
DC SPECIFICATIONS
Symbol Parameter
V
V
V
V
I
I
∆ I
High Level Input
IH
Voltage
Low Level Input
IL
Voltage
High Level Output
OH
Voltage Low Level Output
OL
Voltage
I
Input Leakage
I
Current High Impedance
OZ
Output Leakage Current
Quiescent Supply
CC
Current Additional Worst
CC
Case Supply Current
Test Condition Value
T
= 25°C
V
(V)
CC
A
Min. Typ. Max. Min. Max. Min. Max.
4.5 to
2.0 2.0 2.0 V
5.5
4.5 to
0.8 0.8 0.8 V
5.5
4.5
4.5
5.5
5.5
5.5
IO=-20 µA
I
=-6.0 mA
O
IO=20 µA
I
=6.0 mA
O
= VCC or GND
V
I
= VIH or V
V
I
VO = VCC or GND
= VCC or GND
V
I
5.5 Per Input pin
= 0.5V or
V
I
V
= 2.4V
I
4.4 4.5 4.4 4.4
4.18 4.31 4.13 4.10
0.0 0.1 0.1 0.1
0.17 0.26 0.33 0.40 ± 0.1 ± 1 ± 1 µA
IL
± 0.5 ± 5 ± 10 µA
2.0 2.9 3.0 mA
Other Inputs at
V
or GND
CC
I
= 0
O
-40 to 85°C -55 to 125°C
Unit
V
V
44080µA
4/11
Page 5
M74HCT640
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6ns)
Test Condition Value
T
Symbol Parameter
t
TLH tTHL
t
PLH tPHL
t
PZL tPZH
Output Transition Time
Propagation Delay Time
High Impedance Output Enable Time
t
PLZ tPHZ
High Impedance Output Disable
C
V
CC
(V)
L
(pF)
4.5 50 7 12 15 18 ns 50 13 22 28 33
4.5
150 18 30 38 45
R
50
4.5
150
4.5 50
= 1 KΩ
L
R
= 1 KΩ
L
R
= 1 KΩ
L
= 25°C
A
Min. Typ. Max. Min. Max. Min. Max.
19 30 38 45 24 38 48 57
17 30 38 45 ns
Time
CAPACITIVE CHARACTERISTICS
Test Condition Value
T
Symbol Parameter
V
CC
(V)
C
C
I/OUT
C
Input Capacitance
IN
Output Capacitance
Power Dissipation
PD
Capacitance (note
DIR, G An, Bn 13 pF
1)
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
= 25°C
A
Min. Typ. Max. Min. Max. Min. Max.
5101010pF
37 pF
-40 to 85°C -55 to 125°C
-40 to 85°C -55 to 125°C
= CPD x VCC x fIN + ICC/8 (per circuit)
CC(opr)
Unit
ns
ns
Unit
5/11
Page 6
M74HCT640
TEST CIRCUIT
TEST SWITCH
t
, t
PLH
PHL
, t
t
PZL
PLZ
t
, t
PZH
PHZ
CL = 50pF/150p F or equivalen t (includes j i g and probe capacitance ) R
= 1KΩ or equivalent
1
R
= Z
of pulse generator (typically 50Ω)
T
OUT
Open
V
CC
GND
WAVEFORM 1 : PROPAGATION DELAY TIME (f=1MHz; 50% duty cycle)
6/11
Page 7
M74HCT640
WAVEFORM 2 : OUTPUT ENABLE AND DISABLE TIME (f=1MHz; 50% duty cycle)
7/11
Page 8
M74HCT640
Plastic DIP-20 (0.25) MECHANICAL DATA
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
a1 0.254 0.010
B 1.39 1.65 0.055 0.065 b 0.45 0.018
b1 0.25 0.010
D 25.4 1.000 E 8.5 0.335
e 2.54 0.100
e3 22.86 0.900
F 7.1 0.280
I 3.93 0.155
L 3.3 0.130
Z 1.34 0.053
8/11
P001J
Page 9
SO-20 MECHANICAL DATA
M74HCT640
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 2.65 0.104 a1 0.1 0.2 0.004 0.008 a2 2.45 0.096
b 0.35 0.49 0.014 0.019
b1 0.23 0.32 0.009 0.012
C 0.5 0.020 c1 45° (typ.)
D 12.60 13.00 0.496 0.512
E 10.00 10.65 0.393 0.419
e 1.27 0.050
e3 11.43 0.450
F 7.40 7.60 0.291 0.300
L 0.50 1.27 0.020 0.050
M 0.75 0.029
S8° (max.)
mm. inch
PO13L
9/11
Page 10
M74HCT640
TSSOP20 MECHANICAL DATA
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 1.2 0.047
A1 0.05 0.15 0.002 0.004 0.006
A2 0.8 1 1.05 0.031 0.039 0.041
b 0.19 0.30 0.007 0.012
c 0.09 0.20 0.004 0.0089
D 6.4 6.5 6.6 0.252 0.256 0.260
E 6.2 6.4 6.6 0.244 0.252 0.260
E1 4.3 4.4 4.48 0.169 0.173 0.176
e 0.65 BSC 0.0256 BSC
K0° 8°0° 8°
L 0.45 0.60 0.75 0.018 0.024 0.030
A2
A
A1
b
e
K
c
L
E
D
E1
PIN 1 IDENTIFICATION
10/11
1
0087225C
Page 11
M74HCT640
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