Datasheet M74HCT540 Datasheet (ST)

Page 1
M74HCT540
OCTAL BUS BUFFER
WITH 3 STATE OUTPUTS (INVERTED)
■ HIGH SPEED:
t
= 12ns (TYP.) at VCC = 4.5V
PD
■ LOW POWER DISSIPATION:
I
= 4µA(MAX.) at TA=25°C
CC
■ COMPA TIBLE WITH TTL OUTPUTS :
V
= 2V (MIN.) VIL = 0.8V (MAX)
IH
■ BALANCED PROPAGATION DELAYS:
t
≅ t
PLH
■ SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
■ PIN AND FUNCTION COMPATIBLE WITH
PHL
| = IOL = 6mA (MIN)
74 SERIES 540
DESCRIPTION
The 74HCT540 is an advanced high-speed CMOS OCTAL BUS BUFFER (3-STATE) fabricated with silicon gate C
2
MOS technology. The M74HCT540 is an inverting buffer. The 3-STATE control gate operates as a two input AND such that if either G1
and G2 are high, all eight output a re in the high impedance state. In order to enhance PC board layout the M74HCT540 offer a pinout having inputs and outputs on opposite sides of the package.
TSSOPDIP SOP
ORDER CODES
PACKAGE TUBE T & R
DIP M74HCT540B1R
SOP M74HCT540M1R M74HCT540RM13TR
TSSOP M74HCT540TTR
The M74HCT540 is designed to directly interface
2
HSC
MOS systems with TTL and NMOS components. All inputs are equipped with protection circuits against static discharge and transient excess voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
1/9August 2001
Page 2
M74HCT541
INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
1, 19 G1
2, 3, 4, 5, 6,
7, 8, 9
18, 17, 16, 15, 14, 13,
12, 11
10 GND Ground (0V) 20 V
TRUTH TABLE
INPUT OUTPUT
, G2 Output Enable Inputs
A1 to A8 Data Inputs
Y1
to Y8 Bus Outputs
CC
Positive Supply Voltage
G1
G2 An Yn
HXXZ XHXZ
LLHL LLLH
X : Don’t Care Z : High Impedance
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
OK
I
I
or I
CC
P
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied (*) 500mW at 65
Supply Voltage
CC
DC Input Voltage -0.5 to VCC + 0.5
I
DC Output Voltage -0.5 to VCC + 0.5
O
DC Input Diode Current
IK
DC Output Diode Current DC Output Current
O
DC VCC or Ground Current
GND
Power Dissipation
D
Storage Temperature
stg
Lead Temperature (10 sec)
L
; derate to 30 0m W by 10mW/°C from 65
°C
°C to 85°C
-0.5 to +7 V V V
± 20 mA ± 20 mA ± 35 mA ± 70 mA
500(*) mW
-65 to +150 °C
300 °C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
2/9
V
V
V T t
r
Supply Voltage
CC
Input Voltage 0 to V
I
Output Voltage 0 to V
O
Operating Temperature
op
, t
Input Rise and Fall Time (VCC = 4.5 to 5.5V)
f
4.5 to 5.5 V
CC CC
-55 to 125 °C 0 to 500 ns
V V
Page 3
DC SPECIFICATIONS
Symbol Parameter
V
V
V
V
I
I
∆ I
High Level Input
IH
Voltage
Low Level Input
IL
Voltage
High Level Output
OH
Voltage Low Level Output
OL
Voltage
I
Input Leakage
I
Current High Impedance
OZ
Output Leakage Current
Quiescent Supply
CC
Current Additional Worst
CC
Case Supply Current
Test Condition Value
T
= 25°C
V
CC
(V)
A
Min. Typ. Max. Min. Max. Min. Max.
4.5 to
2.0 2.0 2.0 V
5.5
4.5 to
0.8 0.8 0.8 V
5.5
4.5
4.5
5.5
5.5
5.5
IO=-20 µA
I
=-6.0 mA
O
IO=20 µA
I
=6.0 mA
O
= VCC or GND
V
I
= VIH or V
V
I
VO = VCC or GND
= VCC or GND
V
I
5.5 Per Input pin
= 0.5V or
V
I
V
= 2.4V
I
4.4 4.5 4.4 4.4
4.18 4.31 4.13 4.10
0.0 0.1 0.1 0.1
0.17 0.26 0.33 0.40 ± 0.1 ± 1 ± 1 µA
IL
± 0.5 ± 5 ± 10 µA
2.0 2.9 3.0 mA
Other Inputs at
V
or GND
CC
M74HCT541
-40 to 85°C -55 to 125°C
44080µA
Unit
V
V
AC ELECTRICAL CHARACTERISTICS (C
Test Condition Value
Symbol Parameter
t
TLH tTHL
t
PLH tPHL
t
PZL tPZH
t
PLZ tPHZ
Output Transition Time
Propagation Delay Time
Output Enable Time
Output Disable Time
C
V
CC
(V)
(pF)
L
4.5 50 6 12 15 18 ns
4.5 50 12 20 25 30
4.5 150 16 25 31 38
4.5 50
4.5 150 22 34 43 51
4.5 50
= 50 pF, Input tr = tf = 6ns)
L
= 25°C
T
A
Min. Typ. Max. Min. Max. Min. Max.
= 1 KΩ
R
L
= 1 KΩ
R
L
18 30 38 45
19 27 34 41 ns
-40 to 85°C -55 to 125°C
Unit
ns
ns
3/9
Page 4
M74HCT541
CAPACITIVE CHARACTERISTICS
Test Condition Value
T
Symbol Parameter
V
CC
(V)
C
C
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
Input Capacitance
IN
Power Dissipation
PD
Capacitance (note 1)5.0 34 pF
5.0 5101010pF
= 25°C
A
Min. Typ. Max. Min. Max. Min. Max.
TEST CIRCUIT
-40 to 85°C -55 to 125°C
= CPD x VCC x fIN + ICC/8 (per circuit)
CC(opr)
Unit
TEST SWITCH
t
, t
PLH
PHL
, t
t
PZL
PLZ
t
, t
PZH
PHZ
CL = 50pF/150p F or equivalen t (includes j i g and probe capacitance )
= 1KΩ or equivalent
R
1
= Z
R
of pulse generator (typically 50Ω)
T
OUT
Open
V
CC
GND
4/9
Page 5
WAVEFORM 1: PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle)
M74HCT541
WAVEFORM 2 : OUTPUT ENABLE AND DISABLE TIMES (f=1MHz; 50% duty cycle)
5/9
Page 6
M74HCT541
Plastic DIP-20 (0.25) MECHANICAL DATA
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
a1 0.254 0.010
B 1.39 1.65 0.055 0.065 b 0.45 0.018
b1 0.25 0.010
D 25.4 1.000 E 8.5 0.335
e 2.54 0.100
e3 22.86 0.900
F 7.1 0.280
I 3.93 0.155
L 3.3 0.130
Z 1.34 0.053
6/9
P001J
Page 7
SO-20 MECHANICAL DATA
M74HCT541
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 2.65 0.104 a1 0.1 0.2 0.004 0.008 a2 2.45 0.096
b 0.35 0.49 0.014 0.019
b1 0.23 0.32 0.009 0.012
C 0.5 0.020 c1 45° (typ.)
D 12.60 13.00 0.496 0.512
E 10.00 10.65 0.393 0.419
e 1.27 0.050
e3 11.43 0.450
F 7.40 7.60 0.291 0.300
L 0.50 1.27 0.020 0.050
M 0.75 0.029
S8° (max.)
mm. inch
PO13L
7/9
Page 8
M74HCT541
TSSOP20 MECHANICAL DATA
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 1.2 0.047
A1 0.05 0.15 0.002 0.004 0.006
A2 0.8 1 1.05 0.031 0.039 0.041
b 0.19 0.30 0.007 0.012
c 0.09 0.20 0.004 0.0089
D 6.4 6.5 6.6 0.252 0.256 0.260
E 6.2 6.4 6.6 0.244 0.252 0.260
E1 4.3 4.4 4.48 0.169 0.173 0.176
e 0.65 BSC 0.0256 BSC
K0° 8°0° 8°
L 0.45 0.60 0.75 0.018 0.024 0.030
A2
A
A1
b
e
K
c
L
E
D
E1
PIN 1 IDENTIFICATION
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0087225C
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M74HCT541
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