Datasheet M74HCT367 Datasheet (ST)

M74HCT367

HEX BUS BUFFER

WITH 3 STATE OUTPUT NON INVERTING

■ HIGH SPEED:

t

= 14ns (TYP.) at VCC = 4.5V

PD

■ LOW POWER DISSIPATION:

I

= 4µA(MAX.) at TA=25°C

CC

■ COMPA TIBLE WITH TTL OUTPUTS :

V

= 2V (MIN.) VIL = 0.8V (MAX)

IH

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

| = IOL = 6mA (MIN)

OH

■ BALANCED PROPAGATION DELAYS:

t

≅ t

PHL

PLH

■ PIN AND FUNCTION COMPATIBLE WITH

74 SERIES 367

DESCRIPTION

The M74HCT367 is an high speed CMOS HEX BUS BUFFER 3-STATE OUTPUTS fabricated with silicon gate C

2

MOS technology. This device contains six buffers, four bu ffers are controlled by an enable input (G1

) and the other two buffers are controlled by the other enable input (G2 enabled when G1

); the outputs of each bu ffer group are

and/or G2 inputs are held low,

TSSOPDIP SOP

ORDER CODES

PACKAGE TUBE T & R

DIP M74HCT367B1R

SOP M74HCT367M1R M74HCT367RM13TR

TSSOP M74HCT367TTR

and when held high, these outputs are disabled in a high-impedance state. All inputs are equipped with protection circuits against static discharge and transient excess voltage.

PIN CONNECTION AND IEC LOGIC SYMBOLS

1/9September 2001

M74HCT367

INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

PIN No SYMBOL NAME AND FUNCTION

1, 15 G1

2, 4, 6, 10,

12, 14

3, 5, 7, 9, 1 1, 131Y to 6Y Data Outputs

8 GND Ground (0V)

16 V

TRUTH TABLE

, G2 3 State Output Enable

1A to 6A Data Inputs

CC

INPUTS OUTPUTS

Input

Positive Supply Voltage

G

An Yn

LLL LHH

HXZ

X: Don’t Care Z: High Impedance

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

I

OK

I

or I

CC

P

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied (*) 500mW at 65

Supply Voltage

CC

DC Input Voltage -0.5 to VCC + 0.5

I

DC Output Voltage -0.5 to VCC + 0.5

O

DC Input Diode Current

IK

DC Output Diode Current DC Output Current

O

DC VCC or Ground Current

GND

Power Dissipation

D

Storage Temperature

stg

Lead Temperature (10 sec)

L

; derate to 30 0m W by 10mW/°C from 65

°C

°C to 85°C

-0.5 to +7 V V V

± 20 mA ± 20 mA ± 35 mA ± 70 mA

500(*) mW

-65 to +150 °C

300 °C

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Value Unit

2/9

V

V T t

r

Supply Voltage

CC

Input Voltage 0 to V

I

Output Voltage 0 to V

O

Operating Temperature

op

, t

Input Rise and Fall Time (VCC = 4.5 to 5.5V)

f

4.5 to 5.5 V

CC CC

-55 to 125 °C 0 to 500 ns

V V

DC SPECIFICATIONS

Symbol Parameter

V

I

∆ I

High Level Input

IH

Voltage

Low Level Input

IL

Voltage

High Level Output

OH

Voltage Low Level Output

OL

Voltage

I

Input Leakage

I

Current High Impedance

OZ

Output Leakage Current

Quiescent Supply

CC

Current Additional Worst

CC

Case Supply Current

Test Condition Value

T

= 25°C

V

CC

(V)

A

Min. Typ. Max. Min. Max. Min. Max.

4.5 to

2.0 2.0 2.0 V

5.5

4.5 to

0.8 0.8 0.8 V

5.5

4.5

5.5

IO=-20 µA

I

=-6.0 mA

O

IO=20 µA

I

=6.0 mA

O

= VCC or GND

V

I

= VIH or V

V

I

VO = VCC or GND

= VCC or GND

V

I

5.5 Per Input pin

= 0.5V or

V

I

V

= 2.4V

I

4.4 4.5 4.4 4.4

4.18 4.31 4.13 4.10

0.0 0.1 0.1 0.1

0.17 0.26 0.33 0.40 ± 0.1 ± 1 ± 1 µA

IL

± 0.5 ± 5 ± 10 µA

2.0 2.9 3.0 mA

Other Inputs at

V

or GND

CC

I

= 0

O

M74HCT367

-40 to 85°C -55 to 125°C

44080µA

Unit

V

AC ELECTRICAL CHARACTERISTICS (C

Test Condition Value

Symbol Parameter

t

TLH tTHL

t

PLH tPHL

t

PZL tPZH

Output Transition Time

Propagation Delay Time

High Impedance Output Enable Time

t

PLZ tPHZ

High Impedance Output Disable Time

C

V

CC

(V)

L

(pF)

4.5 50 7 12 15 18 ns

4.5 50 14 22 28 33

4.5 150 18 28 35 42

4.5 50

4.5 150

4.5 50

= 50 pF, Input tr = tf = 6ns)

L

= 25°C

T

A

Min. Typ. Max. Min. Max. Min. Max.

R

= 1 KΩ

L

R

= 1 KΩ

L

R

= 1 KΩ

L

16 25 31 38 20 31 39 47

18 25 31 38 ns

-40 to 85°C -55 to 125°C

Unit

ns

3/9

M74HCT367

CAPACITIVE CHARACTERISTICS

Test Condition Value

T

Symbol Parameter

C

Input Capacitance

IN

Power Dissipation

PD

Capacitance (note

V

CC

(V)

= 25°C

A

Min. Typ. Max. Min. Max. Min. Max.

5101010pF

47 pF

1)

1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without

load. (R ef er to Test Circuit). Aver age opera ting current can be obta i ned by the following equa tion. I Channel)

TEST CIRCUIT

-40 to 85°C -55 to 125°C

= CPD x VCC x fIN + ICC/6 (per

CC(opr)

Unit

TEST SWITCH

t

, t

PLH

PHL

, t

t

PZL

PLZ

t

, t

PZH

PHZ

CL = 50pF/150p F or equivalent (includes jig and probe capacit ance)

= 1KΩ or equivalent

R

1

= Z

R

of pulse generator (typically 50Ω)

T

OUT

Open

V

CC

GND

4/9

WAVEFORM 1 : PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle)

M74HCT367

WAVEFORM 2 : OUTPUT ENABLE AND DISABLE TIMES (f=1MHz; 50% duty cycle)

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M74HCT367

DIM.

a1 0.51 0.020

B 0.77 1.65 0.030 0.065 b 0.5 0.020

b1 0.25 0.010

D 20 0.787 E 8.5 0.335

e 2.54 0.100

e3 17.78 0.700

F 7.1 0.280

Plastic DIP-16 (0.25) MECHANICAL DATA

mm. inch

MIN. TYP MAX. MIN. TYP. MAX.

I 5.1 0.201

L 3.3 0.130

Z 1.27 0.050

6/9

P001C

SO-16 MECHANICAL DATA

M74HCT367

DIM.

A 1.75 0.068 a1 0.1 0.2 0.003 0.007 a2 1.65 0.064

b 0.35 0.46 0.013 0.018 b1 0.19 0.25 0.007 0.010

C 0.5 0.019

c1 45° (typ.)

D 9.8 10 0.385 0.393 E 5.8 6.2 0.228 0.244

e 1.27 0.050 e3 8.89 0.350

F 3.8 4.0 0.149 0.157 G 4.6 5.3 0.181 0.208

L 0.5 1.27 0.019 0.050

M 0.62 0.024

S8° (max.)

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

PO13H

7/9

M74HCT367

TSSOP16 MECHANICAL DATA

mm. inch

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

A 1.2 0.047

A1 0.05 0.15 0.002 0.004 0.006

A2 0.8 1 1.05 0.031 0.039 0.041

b 0.19 0.30 0.007 0.012

c 0.09 0.20 0.004 0.0089

D 4.9 5 5.1 0.193 0.197 0.201

E 6.2 6.4 6.6 0.244 0.252 0.260

E1 4.3 4.4 4.48 0.169 0.173 0.176

e 0.65 BSC 0.0256 BSC

K0° 8°0° 8°

L 0.45 0.60 0.75 0.018 0.024 0.030

A2

A

A1

b

e

c

K

L

E

D

E1

PIN 1 IDENTIFICATION

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1

0080338D

M74HCT367

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