Datasheet M74HCT30 Datasheet (SGS Thomson Microelectronics)

.HIGH SPEED

tPD= 15 ns(TYP.) AT VCC=5V

.LOWPOWER DISSIPATION

ICC=1µA(MAX.) AT TA=25°C

.COMPATIBLE WITH TTL OUTPUTS

VIH= 2V(MIN.) VIL= 0.8V (MAX)

.OUTPUT DRIVE CAPABILITY

10 LSTTLLOADS

.SYMMETRICALOUTPUT IMPEDANCE

IOH =IOL= 4 mA(MIN.)

.BALANCEDPROPAGATION DELAYS

t

PLH=tPHL

.PIN AND FUNCTION COMPATIBLE WITH

54/74LS30

DESCRIPTION

The M54/74HCT30 isahighspeedCMOS8-INPUT
NAND GATE fabricated with silicon gate C2MOS
technology.

It has the same high speedperformance of LSTTL
combined with trueCMOS lowpower consumption.
The internal circuitis composedof 5stages includ­ing buffer output, which gives high noiseimmunity
and stable output.All inputs are equipped with pro­tectioncircuitsagainststaticdischarge andtransient
excess voltage.Thisintegrated circuithas input and
outputcharacteristics that arefully compatible with
54/74 LSTTL logic families. M54/74HCT devices
are designed to directly interface HSC2MOS sys­tems with TTL and NMOS components. They are
also plugin replacements forLSTTL devicesgiving
a reduction of power consumption.

M54HCT30
M74HCT30

8 INPUT NANDGATE

B1R

(PlasticPackage)

M1R

(MicroPackage)

ORDER CODES :

M54HC T30F1R M74H CT30M1R
M74HC T30B1R M74HCT30C1R

PIN CONNECTIONS (top view)

F1R

(CeramicPackage)

C1R

(Chip Carrier)

INPUT AND OUTPUT EQUIVALENT CIRCUIT

February 1993

NC =
No Internal
Connection

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M54/M74HCT30

TRUTH TABLE

ABCDEFGHY

LXXXXXXXH
XLXXXXXXH
XXLXXXXXH
XXXLXXXXH
XXXXLXXXH
XXXXXLXXH
XXXXXXLXH
XXXXXXXLH

HHHHHHHHL

PIN DESCRIPTION

PIN No SYMBOL NAME AND FUNCTION

1, 2, 3, 4,

5, 6, 11, 12

A, B, C, D,

E, F, G, H

Data Inputs

9, 10, 13 NC Not connected

8 Y Data Outputs
7 GND Ground (0V)

14 V

CC

Positive Supply Voltage

SCHEM ATIC CIRCUIT (Per Gate)

IEC LOGIC SYMBOL

ABSOLU TE MAXIMUM R AT ING S

Symbol Parameter Value Unit

V

CC

V

V

O

I

IK

I

OK

I

O

I

or I

CC

P

D

T

stg

T

L

AbsoluteMaximumRatingsarethose values beyondwhichdamagetothedevice mayoccur. Functionaloperationunder theseconditionisnotimplied.
(*)500 mW:≅ 65oC derateto 300 mWby 10mW/oC: 65oCto85oC

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Supply Voltage -0.5 to +7 V
DC Input Voltage -0.5 to VCC+ 0.5 V

I

DC Output Voltage -0.5 to VCC+ 0.5 V
DC Input Diode Current ± 20 mA
DC Output Diode Current ± 20 mA
DC Output Source Sink Current Per Output Pin ± 25 mA
DC VCCor Ground Current ± 50 mA

GND

Power Dissipation 500 (*) mW
Storage Temperature -65 to +150
Lead Temperature (10 sec) 300

o

C

o

C

M54/M74HCT30

RECO MM ENDED OPERATI N G CO NDITI O NS

Symbol Parameter Value Unit

V

V

V

T

t

r,tf

DC SPECIFICATIO NS

Symbol Parameter

V

V

V

OH

V

OL

I

I

CC

∆I

Supply Voltage 4.5 to 5.5 V

CC

Input Voltage 0 to V

I

Output Voltage 0 to V

O

Operating Temperature: M54HC Series

op

M74HC Series

CC
CC

-55 to +125

-40 to +85

Input Rise and Fall Time (VCC= 4.5 to 5.5V) 0 to 500 ns

Test Conditions Value

T

High Level Input

IH

Voltage

V

(V)

4.5

=25oC

CC

A

54HC and 74HC

Min. Typ. Max. Min. Max. Min. Max.

2.0 2.0 2.0 V

to

-40 to 85oC
74HC

-55 to 125oC

5.5

Low Level Input

IL

Voltage

4.5
to

0.8 0.8 0.8 V

5.5

High Level
Output Voltage

Low Level Output
Voltage

Input Leakage

I

Current
Quiescent Supply

VI=

IO=-20 µA 4.4 4.5 4.4 4.4

V

IH

4.5

or

I

=-4.0 mA 4.18 4.31 4.13 4.10

O

V

IL

VI=

IO=20µA 0.0 0.1 0.1 0.1

V

IH

4.5

or

I

= 4.0 mA 0.17 0.26 0.33 0.4

O

V

IL

VI=VCCor GND ±0.1 ±1 ±1 µA

5.5

5.5 VI=VCCor GND 1 10 20 µA

Current
Additional worst

CC

case supply
current

5.5 Per Input pin

V

= 0.5V or

I

VI= 2.4V

2.0 2.9 3.0 mA

Other Inputs at

VCCor GND

IO=0

54HC

V
V

o

C

o

C

Unit

V

V

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M54/M74HCT30

AC ELECTRICAL CHARACTERISTICS (CL=50pF,Inputtr=tf=6ns)

Test Conditions Value

T

=25oC

Symbol Parameter

t

TLH

t

THL

t

PLH

t

PHL

C

C

PD

Output Transition
Time

Propagation
Delay Time

Input Capacitance 5 10 10 10 pF

IN

(*) Power Dissipation

V

CC

(V)

4.5 8151922

4.5 18 28 35 42

A

54HC and 74HC

Min. Typ. Max. Min. Max. Min. Max.

34

Capacitance

(*) CPDisdefined as the valueof the IC’s internal equivalent capacitance which is calculated fromthe operatingcurrent consumption withoutload.
(Referto Test Circuit).Average opertingcurrent can be obtained bythe followingequation. ICC(opr) = CPD•VCC•fIN+I

SWITCHING CHARACTERISTICS TEST CIRCUIT

-40 to 85oC
74HC

-55 to 125oC
54HC

CC

Unit

ns

ns

pF

TEST CIRCUIT ICC(Opr.)

INPUTWAVEFORMISTHESAMEASTHAT IN CASE OF SWITCHINGCHARACTERISTICSTEST.

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Plastic DIP14 MECHANICAL DATA

M54/M74HCT30

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

a1 0.51 0.020

B 1.39 1.65 0.055 0.065

b 0.5 0.020

b1 0.25 0.010

D 20 0.787
E 8.5 0.335

e 2.54 0.100

e3 15.24 0.600

F 7.1 0.280

I 5.1 0.201

L 3.3 0.130

Z 1.27 2.54 0.050 0.100

mm inch

P001A

5/9

M54/M74HCT30

Ceramic DIP14/1 MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 20 0.787
B 7.0 0.276
D 3.3 0.130
E 0.38 0.015

e3 15.24 0.600

F 2.29 2.79 0.090 0.110
G 0.4 0.55 0.016 0.022
H 1.17 1.52 0.046 0.060

L 0.22 0.31 0.009 0.012
M 1.52 2.54 0.060 0.100
N 10.3 0.406

P 7.8 8.05 0.307 0.317

Q 5.08 0.200

mm inch

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P053C

SO14 MECHANICAL DATA

M54/M74HCT30

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 1.75 0.068
a1 0.1 0.2 0.003 0.007
a2 1.65 0.064

b 0.35 0.46 0.013 0.018

b1 0.19 0.25 0.007 0.010

C 0.5 0.019

c1 45° (typ.)

D 8.55 8.75 0.336 0.344

E 5.8 6.2 0.228 0.244

e 1.27 0.050

e3 7.62 0.300

F 3.8 4.0 0.149 0.157

G 4.6 5.3 0.181 0.208

L 0.5 1.27 0.019 0.050

M 0.68 0.026

S8°(max.)

mm inch

P013G

7/9

M54/M74HCT30

PLCC20 MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 9.78 10.03 0.385 0.395

B 8.89 9.04 0.350 0.356

D 4.2 4.57 0.165 0.180
d1 2.54 0.100
d2 0.56 0.022

E 7.37 8.38 0.290 0.330

e 1.27 0.050

e3 5.08 0.200

F 0.38 0.015
G 0.101 0.004
M 1.27 0.050

M1 1.14 0.045

mm inch

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P027A

M54/M74HCT30

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted byimplication or otherwise under any patent or patentrights of SGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts are not authorized foruse ascritical componentsin life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.

 1994 SGS-THOMSON Microelectronics - All Rights Reserved

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