Datasheet M74HCT04TTR, M74HCT04RM13TR, M74HCT04M1R, M74HCT04B1R Datasheet (SGS Thomson Microelectronics)

Page 1
M74HCT04
HEX INVERTER
HIGH SPEED:
t
= 11ns (TYP.) at VCC=4.5V
PD
LOW POWER DISSIPATION:
I
= 1µA(MAX.) at TA=25°C
COMPAT I B LE WITH TT L OUTPUTS :
V
= 2V (MIN.) VIL = 0.8V (MAX)
IH
BALANCED PROPAGATION DELAYS:
t
t
PLH
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
PIN AND FUNCTION COMPATIBLE WITH
PHL
| = IOL = 4mA (MIN)
74 SERIES 04
DESCRIPTION
The M74HCT04 is an high speed CMOS HEX INVERTER fabricated with silicon gate C
2
MOS
technology. The internal circuit is composed of 3 stages
including buffer output , which enables high noise immunity and stable output.
TSSOPDIP SOP
ORDER CODES
PACKAGE TUBE T & R
DIP M74HCT04B1R
SOP M74HCT04M1R M74HCT04RM13TR
TSSOP M74HCT04TTR
The M74HCT04 is designed to directly interface
2
HSC
MOS systems with TTL and NMOS components. All inputs are equipped with protection circuits against static discharge and transient excess voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
1/8July 2001
Page 2
M74HCT04
INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
1, 3, 5, 9, 1 1,
13
2, 4, 6, 8, 10,
12
7 GND Ground (0V)
14
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
OK
I
I
or I
CC
P
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied (*) 500mW at 65
Supply Voltage
CC
DC Input Voltage -0.5 to VCC + 0.5
I
DC Output Voltage -0.5 to VCC + 0.5
O
DC Input Diode Current
IK
DC Output Diode Current DC Output Current
O
DC VCC or Ground Current
GND
Power Dissipation
D
Storage Temperature
stg
Lead Temperature (10 sec)
L
°C; derate to 300mW b y 10mW/°C from 65° C to 85°C
1A to 6A Data Inputs
1Y to 6Y Data Outputs
V
CC
Positive Supply Voltage
AY
LH
HL
-0.5 to +7 V V V
± 20 mA ± 20 mA ± 25 mA ± 50 mA
500(*) mW
-65 to +150 °C
300 °C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
2/8
V
V
V T t
r
Supply Voltage
CC
Input Voltage 0 to V
I
Output Voltage 0 to V
O
Operating Temperature
op
, t
Input Rise and Fall Time (VCC = 4.5 to 5.5V)
f
4.5 to 5.5 V
CC CC
-55 to 125 °C 0 to 500 ns
V V
Page 3
DC SPECIFICATIONS
Symbol Parameter
V
V
V
V
I
I
High Level Input
IH
Voltage
Low Level Input
IL
Voltage
High Level Output
OH
Voltage Low Level Output
OL
Voltage
I
Input Leakage
I
Current Quiescent Supply
CC
Current Additional Worst
CC
Case Supply Current
Test Condition Value
T
= 25°C
V
CC
(V)
A
Min. Typ. Max. Min. Max. Min. Max.
4.5 to
2.0 2.0 2.0 V
5.5
4.5 to
0.8 0.8 0.8 V
5.5
4.5
4.5
5.5
5.5
IO=-20 µA
I
=-4.0 mA
O
IO=20 µA
I
=4.0 mA
O
= VCC or GND
V
I
= VCC or GND
V
I
5.5 Per Input pin
V
= 0.5V or
I
V
= 2.4V
I
4.4 4.5 4.4 4.4
4.18 4.31 4.13 4.10
0.0 0.1 0.1 0.1
0.17 0.26 0.33 0.40 ± 0.1 ± 1 ± 1 µA
2.0 2.9 3.0 mA
Other Inputs at
V
or GND
CC
I
= 0
O
M74HCT04
-40 to 85°C -55 to 125°C
11020µA
Unit
V
V
AC ELECTRICAL CHARACTERISTICS (C
= 50 pF, Input tr = tf = 6ns)
L
Test Condition Value
Symbol Parameter
t
TLH tTHL
t
PLH tPHL
Output Transition Time
Propagation Delay Time
= 25°C
V
CC
(V)
A
Min. Typ. Max. Min. Max. Min. Max.
4.5 8151923ns
4.5 11 18 23 27 ns
-40 to 85°C -55 to 125°C
Unit
T
CAPACITIVE CHARACTERISTICS
Test Condition Value
T
Symbol Parameter
C
C
Input Capacitance
IN
Power Dissipation
PD
Capacitance (note
V
CC
(V)
= 25°C
A
Min. Typ. Max. Min. Max. Min. Max.
5101010pF
20 pF
1)
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
-40 to 85°C -55 to 125°C
= CPD x VCC x fIN + ICC/6 (per gate)
CC(opr)
Unit
3/8
Page 4
M74HCT04
TEST CIRCUIT
CL = 50pF or equivalent (in cl udes jig and probe capac i t ance) R
= Z
of pulse generator (typically 50)
T
OUT
WAVEFORM : PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle)
4/8
Page 5
M74HCT04
Plastic DIP-14 MECHANICAL DATA
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
a1 0.51 0.020
B 1.39 1.65 0.055 0.065 b 0.5 0.020
b1 0.25 0.010
D 20 0.787 E 8.5 0.335
e 2.54 0.100
e3 15.24 0.600
F 7.1 0.280
I 5.1 0.201
L 3.3 0.130
Z 1.27 2.54 0.050 0.100
P001A
5/8
Page 6
M74HCT04
SO-14 MECHANICAL DATA
DIM.
A 1.75 0.068 a1 0.1 0.2 0.003 0.007 a2 1.65 0.064
b 0.35 0.46 0.013 0.018
b1 0.19 0.25 0.007 0.010
C 0.5 0.019 c1 45° (typ.)
D 8.55 8.75 0.336 0.344
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 7.62 0.300
F 3.8 4.0 0.149 0.157
G 4.6 5.3 0.181 0.208
L 0.5 1.27 0.019 0.050
M 0.68 0.026
S8° (max.)
MIN. TYP MAX. MIN. TYP. M AX.
mm. inch
6/8
PO13G
Page 7
M74HCT04
TSSOP14 MECHANICAL DATA
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. M AX.
A 1.2 0.047
A1 0.05 0.15 0.002 0.004 0.006
A2 0.8 1 1.05 0.031 0.039 0.041
b 0.19 0.30 0.007 0.012
c 0.09 0.20 0.004 0.0089
D 4.9 5 5.1 0.193 0.197 0.201
E 6.2 6.4 6.6 0.244 0.252 0.260
E1 4.3 4.4 4.48 0.169 0.173 0.176
e 0.65 BSC 0.0256 BSC
K0° 8°0° 8°
L 0.45 0.60 0.75 0.018 0.024 0.030
A2
A
A1
b
e
c
K
L
E
D
E1
PIN 1 IDENTIFICATION
1
0080337D
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Page 8
M74HCT04
Information furnished is bel ieved to be accurate and reliable. However, STMicroe lectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No li cense is granted by i mp lica tion or otherwise under a ny patent or patent rights of STMicroelectronics. Specifications mentioned in this publication ar e subject to change without notice. This publication supersedes and replaces all information previously supplied. S TMicroelectronics products are not authorized for use as critica l components in life suppo rt devices or systems without express written approval of STMicroelectronics.
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