Datasheet M74HC75TTR, M74HC75RM13TR, M74HC75M1R, M74HC75B1R Datasheet (SGS Thomson Microelectronics)

M74HC75
4 BIT D TYPE LATCH
HIGH SPEED :
t
= 11ns (TYP.) at VCC = 6V
PD
LOW POWER DISSIPATION:
=2µA(MAX.) at TA=25°C
CC
HIGH NOISE IMMUNITY:
V
= V
NIH
SYMMETRICAL OUTPUT IMPED ANCE:
|I
| = IOL = 4mA (MIN)
OH
BALANCED PROPAGATION DELAYS:
t
t
PLH
WIDE OPERATING VOLTAGE RANGE:
V
(OPR) = 2V to 6V
CC
PIN AND FUNCTION COMPATIBLE WITH
= 28 % VCC (MIN.)
NIL
PHL
74 SERIES 75
DESCRIPTION
The M74HC75 is an hi gh speed CMOS 4 BIT D TYPE LATCH fabricated with silicon gate C
2
MOS technology. It contains two groups of 2 bit latches controlled by an enable input (G1
2 or G34). These two latch
groups can be used in different circuits. Each latch has Q and Q
outputs (1Q - 4Q and 1Q - 4Q). The
data applied to the data input is transferred to the
TSSOPDIP SOP
ORDER CODES
PACKAGE TUBE T & R
DIP M74HC75B1R
SOP M74HC75M1R M74HC75RM13TR
TSSOP M74HC75TTR
Q and Q
outputs when the enable input is taken high and the outputs will follow the data input as long as the enable input is kept high. When the enable input is taken low, the information data applied to the data input is retained at the outputs. All inputs are equipped with protection circuits against static discharge and transient excess voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
1/10August 2001
M74HC75
IINPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
1, 14, 11, 8 1Q
2, 3, 6, 7 1D to 4D Data Inputs
4G3 • 4
13 G1 • 2
16, 15, 10, 9 1Q to 4Q Latch Outputs
12 GND Ground (0V)
5
TRUTH TABLE
to 4Q
V
CC
Complementary Latch Outputs
Latch Enable Input, latches 3 and 4
Latch Enable Input, latches 1 and 2
Positive Supply Voltage
LOGIC DIAGRAM
INPUTS OUTPUTS
DGQQ
LHLH HHHL X L Qn Q
nLATCH
FUNCTION
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M74HC75
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
OK
I
I
or I
CC
P
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied (*) 500mW at 65
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V
V
V
T
t
r
Supply Voltage
CC
DC Input Voltage -0.5 to VCC + 0.5
I
DC Output Voltage -0.5 to VCC + 0.5
O
DC Input Diode Current
IK
DC Output Diode Current DC Output Current
O
DC VCC or Ground Current
GND
Power Dissipation
D
Storage Temperature
stg
Lead Temperature (10 sec)
L
°C; derate to 300mW by 10mW/°C from 65°C to 85°C
Supply Voltage
CC
Input Voltage 0 to V
I
Output Voltage 0 to V
O
Operating Temperature
op
Input Rise and Fall Time VCC = 2.0V
, t
f
V V
CC CC
= 4.5V = 6.0V
-0.5 to +7 V
± 20 mA ± 20 mA ± 25 mA ± 50 mA
500(*) mW
-65 to +150 °C
300 °C
2 to 6 V
CC CC
-55 to 125 °C 0 to 1000 ns
0 to 500 ns 0 to 400 ns
V V
V V
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M74HC75
DC SPECIFICATIONS
Symbol Parameter
V
V
V
V
I
High Level Input
IH
Voltage
Low Level Input
IL
Voltage
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
I
Input Leakage
I
Current Quiescent Supply
CC
Current
Test Condition Value
V
(V)
CC
= 25°C
A
Min. Typ. Max. Min. Max. Min. Max.
-40 to 85°C -55 to 125°C
T
2.0 1.5 1.5 1.5
6.0 4.2 4.2 4.2
2.0 0.5 0.5 0.5
6.0 1.8 1.8 1.8
2.0
4.5
6.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
6.0
6.0
IO=-20 µA I
=-20 µA
O
I
=-20 µA
O
I
=-4.0 mA
O
I
=-5.2 mA
O
IO=20 µA I
=20 µA
O
I
=20 µA
O
I
=4.0 mA
O
I
=5.2 mA
O
= VCC or GND
V
I
= VCC or GND
V
I
1.9 2.0 1.9 1.9
4.4 4.5 4.4 4.4
5.9 6.0 5.9 5.9
4.18 4.31 4.13 4.10
5.68 5.8 5.63 5.60
0.0 0.1 0.1 0.1
0.0 0.1 0.1 0.1
0.0 0.1 0.1 0.1
0.17 0.26 0.33 0.40
0.18 0.26 0.33 0.40 ± 0.1 ± 1 ± 1 µA
22040µA
Unit
V4.5 3.15 3.15 3.15
V4.5 1.35 1.35 1.35
V
V
4/10
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6ns)
Test Condition Value
T
Symbol Parameter
t
TLH tTHL
t
PLH tPHL
t
PLH tPHL
t
W(H)
Output Transition Time
Propagation Delay Time (DATA - Q)
Propagation Delay Time (G-Q)
Minimum Pulse Width (G)
Minimum Set-up
t
s
Time
Minimum Hold
t
h
Time
V
CC
(V)
2.0 25 75 95 110
6.0 6131619
2.0 36 110 140 165
6.0 10 19 24 28
2.0 40 125 155 190
6.0 11 21 26 32
2.0 18 75 95 110
6.0 6131619
2.0 50 65 75
6.0 9 11 13
2.0 25 30 40
6.0 4 5 7
= 25°C
A
Min. Typ. Max. Min. Max. Min. Max.
M74HC75
-40 to 85°C -55 to 125°C
Unit
ns4.5 7151922
ns4.5 12 22 28 33
ns4.5 13 25 31 38
ns4.5 6151922
ns4.5 10 13 15
ns4.5 5 6 8
CAPACITIVE CHARACTERISTICS
Test Condition Value
T
Symbol Parameter
V
CC
(V)
C
C
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (R ef er to Test Circ ui t). Averag e operatin g current can be obtained by t he following equation. I
Input Capacitance
IN
Power Dissipation
PD
Capacitance (note 1)5.0 30 pF
5.0 5101010pF
= 25°C
A
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
= CPD x VCC x fIN + ICC
CC(opr)
Unit
5/10
M74HC75
TEST CIRCUIT
CL = 50pF or equivalent (in cludes jig and probe capaci tance) R
= Z
of pulse generator (typically 50)
T
OUT
SWITCHING CHARACTERISTICS TEST WAWEFORM (f=1MHz; 50% duty cycle)
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M74HC75
Plastic DIP-16 (0.25) MECHANICAL DATA
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
a1 0.51 0.020
B 0.77 1.65 0.030 0.065 b 0.5 0.020
b1 0.25 0.010
D 20 0.787 E 8.5 0.335
e 2.54 0.100
e3 17.78 0.700
F 7.1 0.280
I 5.1 0.201
L 3.3 0.130
Z 1.27 0.050
P001C
7/10
M74HC75
SO-16 MECHANICAL DATA
DIM.
A 1.75 0.068 a1 0.1 0.2 0.003 0.007 a2 1.65 0.064
b 0.35 0.46 0.013 0.018
b1 0.19 0.25 0.007 0.010
C 0.5 0.019 c1 45° (typ.)
D 9.8 10 0.385 0.393
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 8.89 0.350
F 3.8 4.0 0.149 0.157
G 4.6 5.3 0.181 0.208
L 0.5 1.27 0.019 0.050
M 0.62 0.024
S8° (max.)
MIN. TYP MAX. MIN. TYP. M AX.
mm. inch
8/10
PO13H
M74HC75
TSSOP16 MECHANICAL DATA
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. M AX.
A 1.2 0.047
A1 0.05 0.15 0.002 0.004 0.006
A2 0.8 1 1.05 0.031 0.039 0.041
b 0.19 0.30 0.007 0.012
c 0.09 0.20 0.004 0.0089
D 4.9 5 5.1 0.193 0.197 0.201
E 6.2 6.4 6.6 0.244 0.252 0.260
E1 4.3 4.4 4.48 0.169 0.173 0.176
e 0.65 BSC 0.0256 BSC
K0° 8°0° 8°
L 0.45 0.60 0.75 0.018 0.024 0.030
A2
A
A1
b
e
c
K
L
E
D
E1
PIN 1 IDENTIFICATION
1
0080338D
9/10
M74HC75
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