The M54/74HC670 isahighspeedCMOS4 WORD
X 4 BIT REGISTER FILE (3-STATE) fabricated in
silicon gate C2MOS technology. It has the same
high speed performance of LSTTL combined with
trueCMOSlowpowerconsumption.The
M54HC/74HC670 is a4 x 4 Register File organized
as fourwords by four bits. Separate read andwrite
inputs, both address and enable, allow simultaneousreadand writeoperation. The 3-state outputs
make it possible to connect up to 128outputs to increasethewordcapacity upto512 words.Any number of these devices can be operated in parallel to
generate ann-bitlength.Allinputs areequippedwith
protection circuits against staticdischargeand transient excess voltage.
PIN CONNECTIONS(top view)
NC =
No Internal
Connection
October 1992
1/12
Page 2
M54/M74HC670
WRIT E FUNCTI ON TAB LE
WRITE INPUTSWORDS
WBWAWE0123
L L LQ=DQ0Q0Q0
LHLQ0Q=DQ0Q0
HLLQ0Q0Q=DQ0
H H L Q0Q0Q0Q=D
XXHQ0Q0Q0Q0
Notes: 1 *: DON’TCARE Z: HIGH IMPEDANCE
2 (Q = D) = THEFOUR SELECT INTERNALFLIP FLOP OUTPUTS WILL ASSUMETHE STATESAPPLIEDTO THE FOUR
EXTERNALDATA INPUTS.
3 Q0 =THE LEVELOF Q BEFORETHE INDICATEDINPUTCONDITIONSWERE ESTABLISHED.
4 W0B1 = THEFIRST BIT OF WORD0, ETC.
AbsoluteMaximumRatingsarethose values beyondwhichdamage tothedevicemayoccur.Functional operation under these conditionisnotimplied.
(*)500 mW: ≅ 65oC derateto300mWby 10mW/oC: 65oCto85oC
Supply Voltage-0.5 to +7V
DC Input Voltage-0.5 to VCC+ 0.5V
I
DC Output Voltage-0.5 to VCC+ 0.5V
DC Input Diode Current± 20mA
DC Output Diode Current± 20mA
DC Output Source Sink Current Per Output Pin± 25mA
DC VCCor Ground Current± 50mA
GND
Power Dissipation500 (*)mW
Storage Temperature-65 to +150
Lead Temperature (10 sec)300
L
o
C
o
C
3/12
Page 4
M54/M74HC670
RECO MM ENDED OPERAT I N G CO NDITI ONS
SymbolParameterValueUnit
V
V
V
T
t
r,tf
DC SPECIFICATIO NS
SymbolParameter
V
IH
V
V
OH
V
OL
I
I
OZ
I
CC
Supply Voltage2 to 6V
CC
Input Voltage0 to V
I
Output Voltage0 to V
O
Operating Temperature: M54HC Series
op
M74HC Series
CC
CC
-55 to +125
-40 to +85
Input Rise and Fall TimeVCC= 2 V0 to 1000ns
V
= 4.5 V0 to 500
CC
V
= 6 V0 to 400
CC
Test ConditionsValue
V
(V)
CC
=25oC
T
A
54HC and 74HC
-40 to 85oC
74HC
-55 to 125oC
Min.Typ.Max.Min.Max.Min.Max.
High Level Input
Voltage
2.01.51.51.5
4.53.153.153.15
6.04.24.24.2
Low Level Input
IL
Voltage
2.00.50.50.5
4.51.351.351.35
6.01.81.81.8
High Level
Output Voltage
Low Level Output
Voltage
Input Leakage
I
Current
3 State Output
Off State Current
Quiescent Supply
2.0
V
=
I
4.54.44.54.44.4
6.05.96.05.95.9
4.5I
6.0I
2.0
4.50.00.10.10.1
6.00.00.10.10.1
4.5I
6.0I
6.0
6.0
IO=-20 µA
V
IH
or
V
IL
=-4.0 mA 4.184.314.134.10
O
=-5.2 mA 5.685.85.635.60
O
V
=
I
IO=20µA
V
IH
or
V
IL
= 4.0 mA0.170.260.330.40
O
= 5.2 mA0.180.260.330.40
O
VI=VCCor GND±0.1±1±1µA
VI=VIHor V
VO=VCCor GND
1.92.01.91.9
0.00.10.10.1
IL
±0.5±5±5µA
6.0 VI=VCCor GND44080µA
Current
54HC
V
V
o
C
o
C
Unit
V
V
V
V
4/12
Page 5
M54/M74HC670
AC ELECTRICAL CHARACTERISTICS (CL=50pF,Inputtr=tf=6ns)
Test ConditionsValue
T
=25oC
SymbolParameter
t
t
TLH
THL
Output Transition
Time
V
CC
(V)
2.0307595110
4.58151922
A
54HC and 74HC
Min.Typ.Max.Min.Max.Min.Max.
6.07131619
t
PLH
t
PHL
t
PLH
t
PHL
t
PLH
t
PHL
t
PZL
t
PZH
Propagation
Delay Time
(RA, RB - Qn)
Propagation
Delay Time
(WE - Qn)
Propagation
Delay Time
(Dn - Qn)
Output Disable
Time
2.096185230280
4.524374656
6.020313948
2.0108220275330
4.527445566
6.023374756
2.0104185230280
4.526374656
6.022313948
2.0
R
=1KΩ
4.513222833
L
42110140165
6.011192428
t
t
PHZ
PLZ
Output Disable
Time
2.0
4.513192429
RL=1KΩ
2595120145
6.011162025
t
W(L)
Minimum Pulse
Width
(WE)
Minimum Set-up
t
s
Time (Dn - WE)
(WA, WB - WE)
Minimum Hold
t
h
Time
(Dn - WE)
Minimum Hold
t
h
Time
(WA, WB - WE)
t
latch
Minimum Latch
Time
(WE - RA, RB)
C
C
PD
Input Capacitance5101010pF
IN
(*)Power Dissipation
2.0167595110
4.54151922
6.03131619
2.012506575
4.53101315
6.0391113
2.0000
4.5000
6.0000
2.0555
4.5555
6.0555
2.0555
4.5555
6.0555
96
Capacitance
(*) CPDisdefined as the value ofthe IC’sinternal equivalent capacitance whichis calculated fromthe operatingcurrentconsumption without load.
(Referto Test Circuit). Average operting current canbe obtained bythe followingequation. ICC(opr) = CPD•VCC•fIN+I
-40 to 85oC
74HC
-55 to 125oC
54HC
CC
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
pF
5/12
Page 6
M54/M74HC670
SWITCHING CHARACTERISTICS TEST WAVEFORM
6/12
Page 7
M54/M74HC670
SWITCHING CHARACTERISTICS TEST WAVEFORM (co ntinued)
GND
V
CC
SUCHA LOGIC LEVEL, SHALLBE APPLIEDTO EACH INPUT THAT THE OUTPUT VOLTAGE STAYS IN THE AP-
POSITE SIDE TO THE SWITCHCONNECTIONLEVEL. WHEN THE OUTPUTIS ENABLED.
TEST CIRCUIT ICC(Opr.)
INPUTWAVEFORM IS THE SAME AS THATIN CASEOF SWITCHINGCHARACTERISTICS TEST.
Information furnishedis believed to be accurate and reliable. However, SGS-THOMSON Microelectronicsassumes no responsability for the
consequences of useof suchinformation nor forany infringement of patents or other rights of third parties which may results from its use. No
license is granted byimplication or otherwiseunder any patentorpatent rights ofSGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subjectto changewithout notice. This publication supersedes andreplaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts are not authorized foruse ascritical componentsinlife supportdevices or systemswithoutexpress
written approval of SGS-THOMSON Microelectonics.
1994SGS-THOMSON Microelectronics- All Rights Reserved
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