Datasheet M74HC645, M74HC640, M74HC245 Datasheet (SGS Thomson Microelectronics)

M54/74HC245/640/643
M54/74HC245/640/643

October1993

HC640 INVERTING, HC643 INVERTING/NON INVERTING

OCTALBUS TRANSCEIVER(3-STATE):HC24 5 NONINVERTING

B1R

(PlasticPackage)

ORDER CODES :

M54HC X XXF1R M74HC XXXM1R
M74HC X XXB1R M74HCXXXC1 R

F1R

(CeramicPackage)

M1R

(MicroPackage)

C1R

(Chip Carrier)

PIN CONNECTION (top view)

.HIGH SPEED

tPD= 10 ns(TYP.) at VCC=5V

.LOWPOWER DISSIPATION

ICC=4µA (MAX.) at TA=25oC

.HIGH NOISE IMMUNITY

V

NIH=VINL

=28%VCC(MIN.)

.OUTPUTDRIVE CAPABILITY

15 LSTTL LOADS

.SYMMETRICALOUTPUT IMPEDANCE

|IOH|=IOL=6 mA (MIN)

.BALANCEDPROPAGATIONDELAYS

t

PLH=tPHL

.WIDE OPERATING VOLTAGERANGE

VCC(OPR)= 2 V TO 6 V

.PIN AND FUNCTION COMPATIBLE

WITH 54/74LS245/640/643

DESCRIPTION

The M54/74HC245, HC640 and HC643 utilise
silicongate C2MOStechnology to achive operating
speedsequivalent to LSTTL devices.

Alongwiththelow power dissipationand highnoise
immunity of standards C2MOS integrated circuit, it
possesses the capability to drive 15 LSTTL loads.
TheseIC’s are intended fortwo-way asynchronous
communication between data buses, and the
direction of data trasmission is determined by DIR
input. The enable input (G) can be used to disable
the devicesothatthe busesare effectivelyisolated.

All input are equipped with protection circuits
againststaticdischarge andtransientdischarge and
transient excess voltage.

IT IS PROHIBITED TO APPLY A SIGNAL TO A
BUS TERMINAL WHEN IT IS IN OUTPUT MODE
AND WHEN A BUS THERMINAL IS FLOATING
(HIGH IMPEDANCE STATE), IT IS REQUESTED
TO FIX THE INPUT LEVEL BY MEANS OF
EXTERNAL PULL DOWN OR PULL UP
RESISTOR.

HC245 HC640 HC643

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INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

PIN No SYMBOL NAME AND FUNCTION

1 DIR Directional Control

2, 3, 4, 5,

6, 7, 8, 9

A1 to A8 Data Inputs/Outputs

18, 17, 16,
15, 14, 13,

12, 11

B1 to B8 Data Inputs/Outputs

19 G Output Enabel Input

(Active LOW)
10 GND Ground (0V)
20 V

CC

Positive Supply Voltage

IEC LOGIC SYMBOLS

TRUTH TABLE

INPUT FUNCTION OUTPUT

G DIR A BUS B BUS HC245 HC640 HC643

L L OUTPUT INPUT A = B A = B A = B
L H INPUT OUTPUT B = A B = A B = A

HXZZZZZ

X: ”H” or ”L”
Z: Highimpedance

HC245 HC640 HC643

M54/M74HC245/640/643

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LOGIC DIAGRAM (HC640)

ABSOLU TE MAXIMUM RATING

Symbol Parameter Value Unit

V

CC

Supply Voltage -0.5 to +7 V

V

I

DC Input Voltage -0.5 to VCC+ 0.5 V

V

O

DC Output Voltage -0.5 to VCC+ 0.5 V

I

IK

DC Input Diode Current ± 20 mA

I

OK

DC Output Diode Current ± 20 mA

I

O

DC Output Source Sink Current Per Output Pin ± 35 mA

I

CC

or I

GND

DC VCCor Ground Current ± 70 mA

P

D

Power Dissipation 500 (*) mW

T

stg

Storage Temperature -65 to +150

o

C

T

L

Lead Temperature (10 sec) 300

o

C

AbsoluteMaximumRatingsarethosevaluesbeyondwhichdamagetothedevicemayoccur.Functional operationunder thesecondition isnotimplied.
(*)500 mW:≅ 65oC derateto300 mWby 10mW/oC: 65oCto85oC

NOTE:INCASE OF HC245 OR HC643, INPUTINVERTERS MARKED*AT ABUSAND B BUSARE ELIMINATEDRESPECTIVELY

M54/M74HC245/640/643

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RECO MM ENDED OPERAT I N G CONDI TI O NS

Symbol Parameter Value Unit

V

CC

Supply Voltage 2 to 6 V

V

I

Input Voltage 0 to V

CC

V

V

O

Output Voltage 0 to V

CC

V

T

op

Operating Temperature: M54HC Series

M74HC Series

-55 to +125

-40 to +85

o

C

o

C

t

r,tf

Input Rise and Fall Time VCC= 2 V 0 to 1000 ns

V

CC

= 4.5 V 0 to 500

V

CC

= 6 V 0 to 400

DC SPECIFICATIO NS

Symbol Parameter

Test Conditions Value

Unit

V

CC

(V)

T

A

=25oC

54HC and 74HC

-40 to 85oC
74HC

-55 to 125oC
54HC

Min. Typ. Max. Min. Max. Min. Max.

V

IH

High Level Input
Voltage

2.0 1.5 1.5 1.5
V

4.5 3.15 3.15 3.15

6.0 4.2 4.2 4.2

V

IL

Low Level Input
Voltage

2.0 0.5 0.5 0.5
V

4.5 1.35 1.35 1.35

6.0 1.8 1.8 1.8

V

OH

High Level
Output Voltage

2.0

V

I

=

V

IH

or

V

IL

IO=-20 µA

1.9 2.0 1.9 1.9

V

4.5 4.4 4.5 4.4 4.4

6.0 5.9 6.0 5.9 5.9

4.5 I

O

=-6.0 mA 4.18 4.31 4.13 4.10

6.0 I

O

=-7.8 mA 5.68 5.8 5.63 5.60

V

OL

Low Level Output
Voltage

2.0

V

I

=

V

IH

or

V

IL

IO=20µA

0.0 0.1 0.1 0.1

V

4.5 0.0 0.1 0.1 0.1

6.0 0.0 0.1 0.1 0.1

4.5 I

O

= 6.0 mA 0.17 0.26 0.33 0.40

6.0 I

O

= 7.8 mA 0.18 0.26 0.33 0.40

I

I

Input Leakage
Current

6.0

VI=VCCor GND ±0.1 ±1 ±1 µA

I

OZ

3 State Output
Off State Current

6.0 VI=VIHor V

IL

VO=VCCor GND

±0.5 ±5.0 µA

I

CC

Quiescent Supply
Current

6.0 VI=VCCor GND 4 40 80 µA

M54/M74HC245/640/643

4/11

AC ELECTRICAL CHARACTERISTICS (CL=50pF,Inputtr=tf=6ns)

Symbol Parameter

Test Conditions Value

Unit

V

CC

(V)

C

L

(pF)

T

A

=25oC

54HC and 74HC

-40 to 85oC
74HC

-55 to 125oC
54HC

Min. Typ. Max. Min. Max. Min. Max.

t

TLH

t

THL

Output Transition
Time

2.0
50

25 60 75 90

ns

4.5 7121918

6.0 6101315

t

PLH

t

PHL

Propagation
Delay Time

2.0
50

33 90 115 135

ns

4.5 12 18 23 27

6.0 10 15 20 23

2.0

150

48 120 150 180

ns

4.5 16 24 30 36

6.0 14 20 26 31

t

PZL

t

PZH

Output Enable
Time

2.0
50 RL=1KΩ

48 150 190 225

ns

4.5 16 30 38 45

6.0 14 26 32 38

2.0

150 R

L

=1KΩ

63 180 225 270

ns

4.5 21 36 45 54

6.0 18 31 38 46

t

PLZ

t

PHZ

Output Disable
Time

2.0
50 RL=1KΩ

37 150 190 225

ns

4.5 17 30 38 45

6.0 15 26 32 38

C

IN

Input Capacitance DIR, G 5 10 10 10 pF

C

I/OUT

Output
Capacitance

An, Bn 13

pF

C

PD

(*) Power Dissipation

Capacitance

HC245

HC640/643

39
37

pF

(*) CPDisdefined asthe value ofthe IC’s internalequivalent capacitance which is calculated fromthe operatingcurrent consumption without load.
(Referto TestCircuit).Average operting currentcan be obtained bythe followingequation. ICC(opr) = CPD•VCC•fIN+ICC/8(per circuit)

M54/M74HC245/640/643

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SWITCHING CHARACTERISTICS TEST WAVEFORM

TEST CIRCUIT ICC(Opr.) CPDCALCULATION

CPDis to be calculated with the following
formula by using the measured value of I

CC

(Opr.)in the test circuitopposite.

CPD=

I

CC

(

Opr

.)

fINxV

CC

M54/M74HC245/640/643

6/11

Plastic DIP20 (0.25) MECHANICAL DATA

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

a1 0.254 0.010

B 1.39 1.65 0.055 0.065
b 0.45 0.018

b1 0.25 0.010

D 25.4 1.000

E 8.5 0.335
e 2.54 0.100

e3 22.86 0.900

F 7.1 0.280

I 3.93 0.155
L 3.3 0.130
Z 1.34 0.053

P001J

M54/M74HC245/640/643

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Ceramic DIP20 MECHANICAL DATA

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 25 0.984
B 7.8 0.307

D 3.3 0.130

E 0.5 1.78 0.020 0.070

e3 22.86 0.900

F 2.29 2.79 0.090 0.110

G 0.4 0.55 0.016 0.022

I 1.27 1.52 0.050 0.060
L 0.22 0.31 0.009 0.012

M 0.51 1.27 0.020 0.050

N1 4° (min.), 15° (max.)

P 7.9 8.13 0.311 0.320

Q 5.71 0.225

P057H

M54/M74HC245/640/643

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SO20 MECHANICAL DATA

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 2.65 0.104

a1 0.10 0.20 0.004 0.007
a2 2.45 0.096

b 0.35 0.49 0.013 0.019

b1 0.23 0.32 0.009 0.012

C 0.50 0.020

c1 45° (typ.)

D 12.60 13.00 0.496 0.512

E 10.00 10.65 0.393 0.419
e 1.27 0.050

e3 11.43 0.450

F 7.40 7.60 0.291 0.299
L 0.50 1.27 0.19 0.050

M 0.75 0.029

S8°(max.)

P013L

M54/M74HC245/640/643

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PLCC20 MECHANICAL DATA

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 9.78 10.03 0.385 0.395
B 8.89 9.04 0.350 0.356

D 4.2 4.57 0.165 0.180
d1 2.54 0.100
d2 0.56 0.022

E 7.37 8.38 0.290 0.330
e 1.27 0.050

e3 5.08 0.200

F 0.38 0.015
G 0.101 0.004
M 1.27 0.050

M1 1.14 0.045

P027A

M54/M74HC245/640/643

10/11

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor forany infringementofpatents or other rights of third parties which may results from its use. No
license isgrantedby implication orotherwiseunder any patentorpatent rights ofSGS-THOMSONMicroelectronics. Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorizedforuse ascritical componentsinlife supportdevices or systemswithout express
written approval of SGS-THOMSON Microelectonics.

 1994 SGS-THOMSON Microelectronics - All Rights Reserved

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M54/M74HC245/640/643

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