HC620 3 STATE INVERTIN G HC623 3 STATENON INVE RTING
.HIGH SPEED
tPD= 10 ns(TYP.) AT VCC=5V
.LOWPOWERDISSIPATION
ICC=4µA(MAX.) AT TA=25°C
.HIGH NOISEIMMUNITY
V
NIH=VNIL
.OUTPUT DRIVE CAPABILITY
15 LSTTL LOADS
=28%VCC(MIN.)
B1R
(PlasticPackage)
F1R
(CeramicPackage)
.SYMMETRICALOUTPUT IMPEDANCE
|IOH|=IOL=6 mA(MIN.)
.BALANCEDPROPAGATION DELAYS
t
PLH=tPHL
.WIDE OPERATINGVOLTAGE RANGE
VCC(OPR)= 2V to 6V
.PIN ANDFUNCTION COMPATIBLE
WITH LS620/623
M1R
(MicroPackage)
ORDER CODES :
M54HC X XXF1RM74H CXXXM1R
M74HC X XXB1RM74HCX X XC1R
C1R
(Chip Carrier)
DESCRIPTION
The M54/74HC620/623 are high speed CMOS
OCTALBUS TRANSCEIVERS fabricated in silicon
gate C2MOS technology. They havethe same high
speed performance of LSTTL combined with true
CMOS low powerconsumption.
Theseoctalbus transceiversare designed forasynchronous two-way communication between data
buses. The control function implementation allows
maximumflexibility in timing.
These devices allow data transmission from the A
bus to Bbus or from the B to the A bus depending
upon the logiclevelsat theenable inputs (GBAand
GAB).The enable inputs canbe used to disable the
deviceso that the busesare effectivelyisolated.
The dual-enable configuration gives these devices
thecapabilitytostoredataby simultaneousenabling
of GBA andGAB.
Each output reinforces its input in this transceiver
configuration. Thus, when both control inputs are
enabled and all otherdata sources to the two sets
of bus lines areathigh impedance, both setsof bus
lines(16 in all) willremain attheir laststates. The 8bit codesappearing onthe twosets of buses will be
identical for the ’HC623 or complementary for the
’HC620. Allinputsare equipped with protection circuits against static discharge and transient excess
voltage.
Supply Voltage-0.5 to +7V
DC Input Voltage-0.5 to VCC+ 0.5V
I
DC Output Voltage-0.5 to VCC+ 0.5V
DC Input Diode Current± 20mA
DC Output Diode Current± 20mA
DC Output Source Sink Current Per Output Pin± 35mA
DC VCCor Ground Current± 70mA
GND
Power Dissipation500 (*)mW
Storage Temperature-65 to +150
Lead Temperature (10sec)300
L
o
C
o
C
3/11
M54/M74HC620/623
RECO MM ENDED OPERAT I N G CONDITI O NS
SymbolParameterValueUnit
V
V
V
T
t
r,tf
DC SPECIFICATIONS
SymbolParameter
V
IH
V
V
OH
V
OL
I
I
OZ
I
CC
Supply Voltage2 to 6V
CC
Input Voltage0 to V
I
Output Voltage0 to V
O
Operating Temperature: M54HC Series
op
M74HC Series
CC
CC
-55 to +125
-40 to +85
Input Rise and Fall TimeVCC= 2 V0 to 1000ns
V
= 4.5 V0 to 500
CC
V
= 6 V0 to 400
CC
Test ConditionsValue
V
(V)
CC
=25oC
T
A
54HC and 74HC
-40 to 85oC
74HC
-55 to 125oC
Min.Typ.Max.Min.Max.Min.Max.
High Level Input
Voltage
2.01.51.51.5
4.53.153.153.15
6.04.24.24.2
Low Level Input
IL
Voltage
2.00.50.50.5
4.51.351.351.35
6.01.81.81.8
High Level
Output Voltage
Low Level Output
Voltage
Input Leakage
I
Current
3 State Output
Off State Current
Quiescent Supply
2.0
V
=
I
4.54.44.54.44.4
6.05.96.05.95.9
4.5I
6.0I
2.0
4.50.00.10.10.1
6.00.00.10.10.1
4.5I
6.0I
6.0
6.0
IO=-20 µA
V
IH
or
V
IL
=-6.0 mA 4.184.314.134.10
O
=-7.8 mA 5.685.85.635.60
O
V
=
I
IO=20µA
V
IH
or
V
IL
= 6.0 mA0.170.260.330.40
O
= 7.8 mA0.180.260.330.40
O
VI=VCCor GND±0.1±1±1µA
VI=VIHor V
VO=VCCor GND
1.92.01.91.9
0.00.10.10.1
IL
±0.5±5±10µA
6.0 VI=VCCor GND44080µA
Current
54HC
V
V
o
C
o
C
Unit
V
V
V
V
4/11
M54/M74HC620/623
AC ELECTRICAL CHARACTERISTICS (CL=50pF,Inputtr=tf=6ns)
Test ConditionsValue
T
=25oC
SymbolParameter
t
t
TLH
THL
Output Transition
Time
V
C
CC
(V)
L
(pF)
2.0
50
4.57121518
A
54HC and 74HC
Min.Typ.Max.Min.Max.Min.Max.
25607590
6.06101315
t
PLH
t
PHL
Propagation
Delay Time
(for HC620)
2.0
50
4.512202530
41100125150
6.010172126
2.0
150
4.516263339
55130165195
6.014222833
t
t
PLH
PHL
Propagation
Delay Time
(for HC623)
2.0
50
4.512172126
3885105130
6.010141822
2.0
150
4.516263339
51130165195
6.014222833
t
t
PZL
PZH
Output Enable
Time
2.0
50RL=1KΩ
4.519303845
57150190225
6.016263238
2.0
150 R
4.523364554
=1KΩ
L
69180225270
020313846
t
PLZ
t
PHZ
Output Disable
Time
2.0
50R
4.518253138
=1KΩ
L
43125155190
6.015212632
C
C
PD
CPDisdefined as thevalueofthe IC’s internal equivalent capacitance which iscalculatedfrom theoperating current consumption without load.(Refer
to TestCircuit).Averageoperting current canbe obtained by the followingequation. ICC(opr) = CPD•VCC•fIN+I
Input Capacitance5101010pF
IN
(*)Power Dissipation
Capacitance
for HC620
for HC623
32
34
-40 to 85oC
74HC
CC
-55 to 125oC
54HC
Unit
ns
ns
ns
ns
ns
ns
ns
ns
pF
5/11
M54/M74HC620/623
SWITCHING CHARACTERISTICS TEST WAVEFORM
TEST CIRCUIT ICC(Opr.)CPDCALCULATION
V
GND
CC
INPUT WAVEFORMIS THE SAME AS THAT IN CASE OF
SWITCHINGCHARACTERISTICSTEST.
CPDisto becalculated withthe following formula
byusing the measured value of ICC(Opr.)in the
testcircuit opposite.
I
(
Opr
CPD=
CC
fINxV
.)
CC
In determining the typical value of CPD, a relativelyhigh frequency of 1MHzwasapplied tofIN,
in order to eliminate any error caused by the
quiescentsupply current.
6/11
Plastic DIP20 (0.25) MECHANICAL DATA
M54/M74HC620/623
DIM.
MIN.TYP.MAX.MIN.TYP.MAX.
a10.2540.010
B1.391.650.0550.065
b0.450.018
b10.250.010
D25.41.000
E8.50.335
e2.540.100
e322.860.900
F7.10.280
I3.930.155
L3.30.130
Z1.340.053
mminch
P001J
7/11
M54/M74HC620/623
Ceramic DIP20 MECHANICAL DATA
DIM.
MIN.TYP.MAX.MIN.TYP.MAX.
A250.984
B7.80.307
D3.30.130
E0.51.780.0200.070
e322.860.900
F2.292.790.0900.110
G0.40.550.0160.022
I1.271.520.0500.060
L0.220.310.0090.012
M0.511.270.0200.050
N14° (min.), 15° (max.)
P7.98.130.3110.320
Q5.710.225
mminch
8/11
P057H
SO20 MECHANICAL DATA
M54/M74HC620/623
DIM.
MIN.TYP.MAX.MIN.TYP.MAX.
A2.650.104
a10.100.200.0040.007
a22.450.096
b0.350.490.0130.019
b10.230.320.0090.012
C0.500.020
c145° (typ.)
D12.6013.000.4960.512
E10.0010.650.3930.419
e1.270.050
e311.430.450
F7.407.600.2910.299
L0.501.270.190.050
M0.750.029
S8°(max.)
mminch
P013L
9/11
M54/M74HC620/623
PLCC20 MECHANICAL DATA
DIM.
MIN.TYP.MAX.MIN.TYP.MAX.
A9.7810.030.3850.395
B8.899.040.3500.356
D4.24.570.1650.180
d12.540.100
d20.560.022
E7.378.380.2900.330
e1.270.050
e35.080.200
F0.380.015
G0.1010.004
M1.270.050
M11.140.045
mminch
10/11
P027A
M54/M74HC620/623
Information furnishedis believed to be accurate and reliable. However, SGS-THOMSON Microelectronicsassumes no responsability for the
consequences of useof suchinformation nor for any infringementof patents or other rightsof third parties which may results from its use. No
license is granted byimplication or otherwiseunder any patentor patentrights ofSGS-THOMSON Microelectronics. Specificationsmentioned
in thispublication are subjectto changewithout notice. This publicationsupersedes andreplaces all information previouslysupplied.
SGS-THOMSON Microelectronicsproducts are not authorized foruse ascritical componentsinlifesupportdevices orsystemswithoutexpress
written approval of SGS-THOMSON Microelectonics.
1994SGS-THOMSON Microelectronics- All Rights Reserved
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