M54HC X XXF1RM74H CXXXM1R
M74HC X XXB1RM 74H CXXXC1R
F1R
(CeramicPackage)
C1R
(Chip Carrier)
DESCRIPTION
The M54/74HC365 andtheM54/74HC366arehigh
speedCMOS HEX BUSBUFFER fabricated in silicon gate C2MOS technology. Theyhave the same
high speed performance of LSTTL combined with
true CMOS low power consumption.
All six buffers are controlled by the combination of
two enable inputs(G1 and G2); alloutputs of these
buffers areenabled only when both G1 and G2 inputs are held low, under all other conditions these
outputare disabled to be high-impedance.
Theseoutputsarecapableofdriving upto15LSTTL
loads. The designer has a choice of non-inverting
outputs(HC365)and inverting outputs (HC366).All
inputs areequipped with protection circuits against
staticdischarge andtransient excess voltage.
Supply Voltage-0.5 to +7V
DC Input Voltage-0.5 to VCC+ 0.5V
I
DC Output Voltage-0.5 to VCC+ 0.5V
DC Input Diode Current± 20mA
DC Output Diode Current± 20mA
DC Output Source Sink Current Per Output Pin± 35mA
DC VCCor Ground Current± 70mA
GND
Power Dissipation500 (*)mW
Storage Temperature-65 to +150
Lead Temperature (10 sec)300
L
o
C
o
C
RECO MM ENDED OPERATIN G CO NDI TIONS
SymbolParameterValueUnit
V
T
t
V
V
r,tf
Supply Voltage2 to 6V
CC
Input Voltage0 to V
I
Output Voltage0 to V
O
Operating Temperature: M54HC Series
op
M74HC Series
CC
CC
-55 to +125
-40 to +85
Input Rise and Fall TimeVCC= 2 V0 to 1000ns
V
= 4.5 V0 to 500
CC
V
= 6 V0 to 400
CC
V
V
o
C
o
C
3/11
Page 4
M54/M74HC365/366
DC SPECIFICATIONS
SymbolParameter
V
V
V
V
I
I
High Level Input
IH
Voltage
Low Level Input
IL
Voltage
High Level
OH
Output Voltage
Low Level Output
OL
Voltage
I
Input Leakage
I
Current
3 State Output
OZ
Off State Current
Quiescent Supply
CC
Current
Test ConditionsValue
V
(V)
CC
=25oC
A
54HC and 74HC
Min.Typ.Max.Min.Max.Min.Max.
-40 to 85oC
74HC
-55 to 125oC
54HC
Unit
T
2.01.51.51.5
4.53.153.153.15
6.04.24.24.2
2.00.50.50.5
4.51.351.351.35
6.01.81.81.8
2.0
4.54.44.54.44.4
6.05.96.05.95.9
4.5I
6.0I
2.0
4.50.00.10.10.1
6.00.00.10.10.1
4.5I
6.0I
6.0
6.0
=
V
I
IO=-20 µA
V
IH
or
V
IL
=-6.0 mA 4.184.314.134.10
O
=-7.8 mA 5.685.85.635.60
O
=
V
I
IO=20µA
V
IH
or
V
IL
= 6.0 mA0.170.260.330.40
O
= 7.8 mA0.180.260.330.40
O
VI=VCCor GND±0.1±1±1µA
VI=VIHor V
VO=VCCor GND
1.92.01.91.9
0.00.10.10.1
IL
±0.5±5±10µA
6.0 VI=VCCor GND44080µA
V
V
V
V
4/11
Page 5
M54/M74HC365/366
AC ELECTRICAL CHARACTERISTICS (CL=50pF,Inputtr=tf=6ns)
Test ConditionsValue
T
=25oC
SymbolParameter
t
t
TLH
THL
Output Transition
Time
V
C
CC
(V)
L
(pF)
2.0
50
4.57121518
A
54HC and 74HC
Min.Typ.Max.Min.Max.Min.Max.
25607590
6.06101315
t
PLH
t
PHL
Propagation
Delay Time
2.0
50
4.512182327
3890115135
6.010152023
2.0
150
4.517263339
51130165195
6.014222833
t
t
PZH
PZL
Output Enable
Time
2.0
50RL=1KΩ
4.516263339
64130165195
6.014222833
2.0
150 R
4.519303845
=1KΩ
L
76150190225
6.016263238
t
t
PHZ
PLZ
Output Disable
Time
2.0
50RL=1KΩ
4.518263339
42130165195
6.015222833
C
C
PD
(*) CPDisdefined asthe valueof the IC’s internal equivalent capacitance whichis calculated fromthe operating current consumption withoutload.
(Referto TestCircuit). Average operting current can be obtained bythe followingequation. ICC(opr) = CPD•VCC•fIN+ICC/6(per Gate)
Input Capacitance5101010pF
IN
(*)Power Dissipation
Capacitance
for HC365
for HC366
27
25
-40 to 85oC
74HC
-55 to 125oC
54HC
Unit
ns
ns
ns
ns
ns
ns
pF
TEST CIRCUIT ICC(Opr.)
INPUT WAVEFORM IS THE SAME AS THAT IN CASE OF
SWITCHINGCHARACTERISTICSTEST.
CPDCALCULATION
CPDis to be calculated with the following
formula by using the measured value of
ICC (opr.) in the testcircuit opposite.
I
(
opr
CPD=
f
CC
IN
)
×
V
CC
In determining the typicalvalue of CPD a
relatvelyhigh frequency of 1MHzwas appliedto fIN, in order to eliminate any error
causedby the quiescent supplycurrent.
5/11
Page 6
M54/M74HC365/366
SWITCHING CHARACTERISTICS TEST WAVEFORM
GND
V
CC
Note: Sucha logic level shallbeapplied toeach inputthatthe outputvoltagestaysin theapposite side to the switch connection level, when
the output is enable.
Information furnished isbelieved tobe accurate and reliable.However, SGS-THOMSON Microelectronicsassumes no responsability for the
consequences of use of such information nor for any infringementof patents or other rights of third partieswhich may results from its use. No
license is granted byimplication or otherwiseunderany patentor patent rights ofSGS-THOMSON Microelectronics. Specificationsmentioned
in this publicationare subject to changewithout notice. This publication supersedes and replaces all informationpreviously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorizedforuse ascritical componentsinlife support devices orsystemswithout express
written approval of SGS-THOMSONMicroelectonics.
1994SGS-THOMSON Microelectronics- All RightsReserved
Australia - Brazil- France - Germany - HongKong - Italy- Japan - Korea - Malaysia -Malta - Morocco - The Netherlands-
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
11/11
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