Page 1
WITH 3 STATE OUTPUTS (NON INVERTING)
■ HIGH SPEED:
t
= 10ns (TYP.) at VCC = 6V
PD
■ LOW POWER DISSIPATION:
I
= 4µA(MAX.) at TA=25°C
CC
■ HIGH NOISE IMMUNITY:
V
= V
NIH
■ SYMMETRICAL OUTPUT IMPEDANCE:
| = IOL = 6mA (MIN)
|I
OH
■ BALANCED PROPAGATION DELAYS:
t
≅ t
PLH
■ WIDE OPERATING VOLTAGE RANGE:
(OPR) = 2V to 6V
V
CC
■ PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 365
= 28 % VCC (MIN.)
NIL
PHL
M74HC365
HEX BUS BUFFER
TSSOPDIP SOP
ORDER CODES
PACKAGE TUBE T & R
DIP M74HC365B1R
SOP M74HC365M1R M74HC365RM13TR
TSSOP M74HC365TTR
DESCRIPTION
The 74HC365 is an advanced high-speed CMOS
HEX BUS BUFFER (3-STATE) fabricated with
silicon gate C
2
MOS technology.
All six buffers are controlled by the combination of
two enable inputs (G1
these buffers are enabled only when both G1
and G2); all outputs of
and
PIN CONNECTION AND IEC LOGIC SYMBOLS
inputs are held low, under a ll other conditions
G2
these outputs are disabled in a high-impedance
state.
The M74HC365 has non inverting outputs.
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
1/10July 2001
Page 2
M74HC365
INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
1, 15 G1
2, 4, 6, 10,
12, 14
3, 5, 7, 9, 1 1, 131Y to 6Y Data Outputs
8 GND Ground (0V)
16 V
TRUTH TABLE
INPUTS OUTPUTS
, G2 Output Enable Inputs
1A to 6A Data Inputs
CC
Positive Supply Voltage
G1
G2 An Y
LLLL
LLHH
HXXZ
XHXZ
X : Don’t Care
Z : High Impedance
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
OK
I
I
or I
CC
P
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
(*) 500mW at 65
Supply Voltage
CC
DC Input Voltage -0.5 to VCC + 0.5
I
DC Output Voltage -0.5 to VCC + 0.5
O
DC Input Diode Current
IK
DC Output Diode Current
DC Output Current
O
DC VCC or Ground Current
GND
Power Dissipation
D
Storage Temperature
stg
Lead Temperature (10 sec)
L
; derate to 30 0m W by 10mW/°C from 65
°C
°C to 85°C
-0.5 to +7 V
V
V
± 20 mA
± 20 mA
± 35 mA
± 70 mA
500(*) mW
-65 to +150 °C
300 °C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
2/10
V
V
V
T
t
r
Supply Voltage
CC
Input Voltage 0 to V
I
Output Voltage 0 to V
O
Operating Temperature
op
Input Rise and Fall Time VCC = 2.0V
, t
f
V
V
CC
CC
= 4.5V
= 6.0V
2 to 6 V
CC
CC
-55 to 125 °C
0 to 1000 ns
0 to 500 ns
0 to 400 ns
V
V
Page 3
DC SPECIFICATIONS
Symbol Parameter
V
V
V
V
I
I
High Level Input
IH
Voltage
Low Level Input
IL
Voltage
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
I
Input Leakage
I
Current
High Impedance
OZ
Output Leakage
Current
Quiescent Supply
CC
Current
M74HC365
Test Condition Value
T
= 25°C
V
CC
(V)
A
Min. Typ. Max. Min. Max. Min. Max.
2.0 1.5 1.5 1.5
6.0 4.2 4.2 4.2
2.0 0.5 0.5 0.5
6.0 1.8 1.8 1.8
2.0
4.5
6.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
6.0
6.0
6.0
IO=-20 µA
I
=-20 µA
O
I
=-20 µA
O
I
=-6.0 mA
O
I
=-7.8 mA
O
IO=20 µA
I
=20 µA
O
I
=20 µA
O
I
=6.0 mA
O
I
=7.8 mA
O
= VCC or GND
V
I
= VIH or V
V
I
IL
VO = VCC or GND
= VCC or GND
V
I
1.9 2.0 1.9 1.9
4.4 4.5 4.4 4.4
5.9 6.0 5.9 5.9
4.18 4.31 4.13 4.10
5.68 5.8 5.63 5.60
0.0 0.1 0.1 0.1
0.0 0.1 0.1 0.1
0.0 0.1 0.1 0.1
0.17 0.26 0.33 0.40
0.18 0.26 0.33 0.40
-40 to 85°C -55 to 125°C
± 0.1 ± 1 ± 1 µA
± 0.5 ± 5 ± 10 µA
44080µA
Unit
V4.5 3.15 3.15 3.15
V4.5 1.35 1.35 1.35
V
V
3/10
Page 4
M74HC365
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6ns)
Test Condition Value
T
Symbol Parameter
t
TLH tTHL
t
PLH tPHL
t
PZL tPZH
Output Transition
Time
Propagation Delay
Time
High Impedance
Output Enable
Time
t
PLZ tPHZ
High Impedance
Output Disable
Time
C
V
CC
(V)
L
(pF)
2.0
50
6.0 6101315
2.0
50
6.0 10 15 20 23
2.0
150
6.0 14 22 28 33
2.0
R
50
= 1 KΩ
L
6.0 14 22 28 33
2.0
150
L
= 1 KΩ
R
6.0 16 26 32 38
2.0
R
50
= 1 KΩ
L
6.0 15 22 28 33
= 25°C
A
Min. Typ. Max. Min. Max. Min. Max.
25 60 75 90
38 90 115 135
51 130 165 195
64 130 165 195
76 150 190 225
42 130 165 195
-40 to 85°C -55 to 125°C
Unit
ns4.5 7121918
ns4.5 12 18 23 27
ns4.5 17 26 33 39
ns4.5 16 26 33 39
ns4.5 19 30 38 45
ns4.5 18 26 33 39
CAPACITIVE CHARACTERISTICS
Test Condition Value
T
Symbol Parameter
V
CC
(V)
C
C
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
Input Capacitance
IN
Power Dissipation
PD
Capacitance (note 1)5.0 27 pF
5.0 5101010pF
= 25°C
A
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
= CPD x VCC x fIN + ICC/6 (per gate)
CC(opr)
Unit
4/10
Page 5
TEST CIRCUIT
TEST SWITCH
t
, t
PLH
PHL
, t
t
PZL
PLZ
t
, t
PZH
PHZ
CL = 50pF/150p F or equivalen t (includes ji g and probe capa ci t ance)
R
= 1KΩ or equivalent
1
R
= Z
of pulse generator (typically 50Ω)
T
OUT
M74HC365
Open
V
CC
GND
WAVEFORM 1: PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle)
5/10
Page 6
M74HC365
WAVEFORM 2 : OUTPUT ENABLE AND DISABLE TIMES (f=1MHz; 50% duty cycle)
6/10
Page 7
M74HC365
Plastic DIP-16 (0.25) MECHANICAL DATA
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
a1 0.51 0.020
B 0.77 1.65 0.030 0.065
b 0.5 0.020
b1 0.25 0.010
D 20 0.787
E 8.5 0.335
e 2.54 0.100
e3 17.78 0.700
F 7.1 0.280
I 5.1 0.201
L 3.3 0.130
Z 1.27 0.050
P001C
7/10
Page 8
M74HC365
SO-16 MECHANICAL DATA
DIM.
A 1.75 0.068
a1 0.1 0.2 0.003 0.007
a2 1.65 0.064
b 0.35 0.46 0.013 0.018
b1 0.19 0.25 0.007 0.010
C 0.5 0.019
c1 45° (typ.)
D 9.8 10 0.385 0.393
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 8.89 0.350
F 3.8 4.0 0.149 0.157
G 4.6 5.3 0.181 0.208
L 0.5 1.27 0.019 0.050
M 0.62 0.024
S8° (max.)
MIN. TYP MAX. MIN. TYP. M AX.
mm. inch
8/10
PO13H
Page 9
M74HC365
TSSOP16 MECHANICAL DATA
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. M AX.
A 1.2 0.047
A1 0.05 0.15 0.002 0.004 0.006
A2 0.8 1 1.05 0.031 0.039 0.041
b 0.19 0.30 0.007 0.012
c 0.09 0.20 0.004 0.0089
D 4.9 5 5.1 0.193 0.197 0.201
E 6.2 6.4 6.6 0.244 0.252 0.260
E1 4.3 4.4 4.48 0.169 0.173 0.176
e 0.65 BSC 0.0256 BSC
K0° 8°0° 8°
L 0.45 0.60 0.75 0.018 0.024 0.030
A2
A
A1
b
e
c
K
L
E
D
E1
PIN 1 IDENTIFICATION
1
0080338D
9/10
Page 10
M74HC365
Information furnished is bel ieved to be accurate and reliable. However, STMicroe lectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No li cense is granted by imp lication or otherwise under a ny patent or patent rig hts of STMicroelectronics. Spec ific at ions
mentioned in this publication ar e subject to change without notice. This publication supersedes and replaces all information
previously supplied. S TMicroelectronics products are not authorized for use as critica l components in life suppo rt devices or
systems without express written approval of STMicroelectronics.
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10/10
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