Datasheet M74HC243, M74HC242 Datasheet (SGS Thomson Microelectronics)

QUAD BUS TRANSCEIVER (3-STATE)

.HIGH SPEED

tPD= 9 ns (TYP.)AT VCC=5V

.LOWPOWERDISSIPATION

ICC=4µA(MAX.) AT 25 °C

.OUTPUT DRIVE CAPABILITY

15 LSTTL LOADS

.BALANCEDPROPAGATION DELAYS

t

PLH=tPHL

.SYMMETRICALOUTPUT IMPEDANCE

IOL=IOH = 6 mA (MIN.)

.HIGH NOISE IMMUNITY

V

NIH=VNIL

=28%VCC(MIN.)

.WIDE OPERATINGVOLTAGE RANGE

VCC(OPR)= 2V TO6 V

.PIN ANDFUNCTION COMPATIBLE

WITH 54/74LS242/243

DESCRIPTION

The M54/74HC242/243 are high speed CMOS
QUAD BUS TRANSCEIVER (3-STATE)
FABRICATED IN SILICON GATE C2MOS
technology. They have the same high speed
performance of LSTTL combined with true CMOS
low power consumption. The HC242/243 are 3
STATE bi-directional inverting and non-inverting
buffersand are intendedfor two-wayasynchronous
communication betweendata buses. They arehigh
drive current outputs which enable high speed
operation when driving large bus capacitances.
Eachdevice hasone activehighenable (GBA),and
one active low enable (GAB). GBA enables the A
outputs and GAB enables the B outputs. All inputs
are equipped with protection circuits against static
discharge and transient excess voltage.

M54/74HC242
M54/74HC243

B1R

(PlasticPackage)

M1R

(MicroPackage)

ORDER CODES :

M54HC X XXF1R M74H CXXXM1R
M74HC X XXB1R M74HCX X XC1R

PIN CONNECTIONS(top view)

HC242

(CeramicPackage)

F1R

C1R

(Chip Carrier)

INPUT AND OUTPUT EQUIVALENT CIRCUIT

October 1993

HC243

NC =
No Internal
Connection

1/11

M54/M74HC242/243

CHIP CARRIER

TRUTH TABLE

INPUTS FUNCTION OUTPUTS

GAB GBA A BUS B BUS HC242 HC243

H H OUTPUT INPUT A = B A = B

L L INPUT OUTPUT B = A B = A

H L HIGH IMPEDANCE Z Z

L H HIGH IMPEDANCE Z Z

IEC LOGIC SYMBOLS

HC242 HC243

PIN DESCRIPTI ON

PIN No SYMBOL NAME AND FUNCTION

1 GAB Output Enable Input

(active LOW)

2, 12 NC Not connected

3, 4, 5, 6 1A to 4A Data Inputs/Outputs

11, 10, 9, 8 1B to 4B Data Inputs/Outputs

13 GBA Output Enable Input

7 GND Ground (0V)

14 V

CC

Positive Supply Voltage

2/11

CIR CUI T D IA GR AM

M54/M74HC242/243

ABSOLU TE M AXIMU M R AT INGS

Symbol Parameter Value Unit

V

CC

V

V

O

I

IK

I

OK

I

O

I

or I

CC

P

D

T

stg

T

AbsoluteMaximumRatingsarethose values beyondwhichdamage tothedevicemayoccur. Functionaloperationunder these conditionisnotimplied.
(*)500 mW: ≅ 65oC derateto300 mWby 10mW/oC: 65oCto85oC

Supply Voltage -0.5 to +7 V
DC Input Voltage -0.5 to VCC+ 0.5 V

I

DC Output Voltage -0.5 to VCC+ 0.5 V
DC Input Diode Current ± 20 mA
DC Output Diode Current ± 20 mA
DC Output Source Sink Current Per Output Pin ± 35 mA
DC VCCor Ground Current ± 70 mA

GND

Power Dissipation 500 (*) mW
Storage Temperature -65 to +150
Lead Temperature (10sec) 300

L

o

C

o

C

3/11

M54/M74HC242/243

RECO MM ENDED OPERAT IN G CO NDITI ONS

Symbol Parameter Value Unit

V

V

V

T

t

r,tf

DC SPECIFICATIONS

Symbol Parameter

V

IH

V

V

OH

V

OL

I

I

OZ

I

CC

Supply Voltage 2 to 6 V

CC

Input Voltage 0 to V

I

Output Voltage 0 to V

O

Operating Temperature: M54HC Series

op

M74HC Series

CC
CC

-55 to +125

-40 to +85

Input Rise and Fall Time VCC= 2 V 0 to 1000 ns

V

= 4.5 V 0 to 500

CC

V

= 6 V 0 to 400

CC

Test Conditions Value

V

(V)

CC

=25oC

T

A

54HC and 74HC

-40 to 85oC
74HC

-55 to 125oC

Min. Typ. Max. Min. Max. Min. Max.

High Level Input
Voltage

2.0 1.5 1.5 1.5

4.5 3.15 3.15 3.15

6.0 4.2 4.2 4.2

Low Level Input

IL

Voltage

2.0 0.5 0.5 0.5

4.5 1.35 1.35 1.35

6.0 1.8 1.8 1.8

High Level
Output Voltage

Low Level Output
Voltage

Input Leakage

I

Current
3 State Output

Off-state Current
Quiescent Supply

2.0
V

=

I

4.5 4.4 4.5 4.4 4.4

6.0 5.9 6.0 5.9 5.9

4.5 I

6.0 I

2.0

4.5 0.0 0.1 0.1 0.1

6.0 0.0 0.1 0.1 0.1

4.5 I

6.0 I

6.0

6.0

IO=-20 µA

V

IH

or

V

IL

=-6.0 mA 4.18 4.31 4.13 4.10

O

=-7.8 mA 5.68 5.8 5.63 5.60

O

V

=

I

IO=20µA

V

IH

or

V

IL

= 6.0 mA 0.17 0.26 0.33 0.40

O

= 7.8 mA 0.18 0.26 0.33 0.40

O

VI=VCCor GND ±0.1 ±1 ±1 µA

VI=VIHor V

VO=VCCor GND

1.9 2.0 1.9 1.9

0.0 0.1 0.1 0.1

IL

±0.5 ±5 ±10 µA

6.0 VI=VCCor GND 4 40 80 µA

Current

54HC

V
V

o

C

o

C

Unit

V

V

V

V

4/11

M54/M74HC242/243

AC ELECTRICAL CHARACTERISTICS (Inp ut tr=tf=6ns)

Test Conditions Value

T

=25oC

Symbol Parameter

t
t

TLH
THL

Output Transition
Time

V

C

CC

(V)

L

(pF)

2.0

50

4.5 7121518

A

54HC and 74HC

Min. Typ. Max. Min. Max. Min. Max.

25 60 75 90

6.0 6101315

t

PLH

t

PHL

Propagation
Delay Time

2.0

50

4.5 13 18 23 27

39 90 115 135

6.0 11 15 20 23

2.0
150

4.5 17 29 36 44

51 145 180 220

6.0 14 25 31 37

t

t

PZH

PZL

3 State Output
Enable Time

2.0

50 RL=1KΩ

4.5 18 29 36 44

57 145 180 220

6.0 15 25 31 37

2.0
150 R

4.5 22 35 44 53

=1KΩ

L

70 175 220 265

6.0 19 30 37 45

t

t

PHZ

PLZ

3 State Output
Disable Time

2.0

50 R

4.5 20 30 38 45

=1KΩ

L

45 150 190 225

6.0 17 26 32 38

C

C

PD

(*) CPDisdefined as the value ofthe IC’sinternal equivalent capacitance which is calculated from the operating current consumption without load.
(Referto Test Circuit). Average operting current canbe obtainedbythe followingequation. ICC(opr) = CPD•VCC•fIN+I

Input Capacitance 5 10 10 10 pF

IN

(*) Power Dissipation

Capacitance

for HC242
for HC243

30
35

-40 to 85oC
74HC

-55 to 125oC
54HC

CC

Unit

ns

ns

ns

ns

ns

ns

pF

SWITCHING CHARACTERISTICS TEST WAVEFORM

5/11

M54/M74HC242/243

TEST CIRCUIT ICC(Opr.) CCPCALCULATION

CPDisto be calculated withthe following formula
by usingthemeasuredvalueof ICC(Opr.)in the
test circuitopposite

I

(

Opr

CPD=

CC

fINxV

In determining the typical value of CPD, a
relatively high frequencyof 1MHzwasapplied to
fIN, inorderto eliminateany error causedbythe
quiescent supplycurrent.

.)

CC

6/11

Plastic DIP14 MECHANICAL DATA

M54/M74HC242/243

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

a1 0.51 0.020

B 1.39 1.65 0.055 0.065

b 0.5 0.020

b1 0.25 0.010

D 20 0.787
E 8.5 0.335

e 2.54 0.100

e3 15.24 0.600

F 7.1 0.280

I 5.1 0.201

L 3.3 0.130

Z 1.27 2.54 0.050 0.100

mm inch

P001A

7/11

M54/M74HC242/243

Ceramic DIP14/1 MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 20 0.787
B 7.0 0.276
D 3.3 0.130
E 0.38 0.015

e3 15.24 0.600

F 2.29 2.79 0.090 0.110
G 0.4 0.55 0.016 0.022
H 1.17 1.52 0.046 0.060

L 0.22 0.31 0.009 0.012
M 1.52 2.54 0.060 0.100
N 10.3 0.406

P 7.8 8.05 0.307 0.317

Q 5.08 0.200

mm inch

8/11

P053C

SO14 MECHANICAL DATA

M54/M74HC242/243

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 1.75 0.068
a1 0.1 0.2 0.003 0.007
a2 1.65 0.064

b 0.35 0.46 0.013 0.018

b1 0.19 0.25 0.007 0.010

C 0.5 0.019

c1 45° (typ.)

D 8.55 8.75 0.336 0.344

E 5.8 6.2 0.228 0.244

e 1.27 0.050

e3 7.62 0.300

F 3.8 4.0 0.149 0.157

G 4.6 5.3 0.181 0.208

L 0.5 1.27 0.019 0.050

M 0.68 0.026

S8°(max.)

mm inch

P013G

9/11

M54/M74HC242/243

PLCC20 MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 9.78 10.03 0.385 0.395

B 8.89 9.04 0.350 0.356

D 4.2 4.57 0.165 0.180
d1 2.54 0.100
d2 0.56 0.022

E 7.37 8.38 0.290 0.330

e 1.27 0.050

e3 5.08 0.200

F 0.38 0.015
G 0.101 0.004
M 1.27 0.050

M1 1.14 0.045

mm inch

10/11

P027A

M54/M74HC242/243

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consequences of useof suchinformation nor for any infringementof patents or other rightsof third parties which may results from its use. No
license is granted byimplication or otherwiseunder any patentor patentrights ofSGS-THOMSON Microelectronics. Specificationsmentioned
in thispublication are subjectto changewithout notice. This publicationsupersedes andreplaces all information previouslysupplied.
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written approval of SGS-THOMSON Microelectonics.

 1994SGS-THOMSON Microelectronics- All Rights Reserved

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