M54HC X XXF1RM74H CXXXM1R
M74HC X XXB1RM74HCX X XC1R
C1R
(Chip Carrier)
DESCRIPTION
The M54/74HC153 and M54/74HC253 are high
speedCMOSDUAL4-CHANNEL MULTIPLEXERS
fabricated with silicon gate C2MOS technology.
Bothachieve highspeed operation, similar to equivalent LSTTL, while maintaining the CMOS low
powerdissipation.
The designer has a choiceof complementary output
(HC153) and3-stateoutput (HC253).
Eachofthesedata(1C0-1C3, 2C0-2C3) isselected
by the two address inputs A and B.
Separate strobe inputs (1G, 2G) are provided for
eachof the two four-line sections. The strobeinput
(G)canbe usedto inhibit thedataoutput ;theoutput
of HC 153 is fixed at a low level and the output of
HC253 is a high impedance, while the strobeinput
is heldlow.
All inputs are equipped with protection circuits
against static discharge and transient excess voltage.
PIN CONNECTIONS(top view)
NC =
No Internal
Connection
January 1993
1/12
Page 2
M54/M74HC153 M54/M74HC253
INPUT AND OUTPUT EQUIVALENT CIRCUIT
IEC LOGIC SYMBOLS
HC153HC253
PIN DESC RIPTION (for HC153)
PIN NoSYMBOLNAME AND FUNCTION
1, 151G, 2GOutput Enable Inputs
14, 2A, BCommon Data Select
Inputs
6, 5, 4, 31C0 to 1C3Data Inputs From
Source 1
71YMultiplexer Output From
Source 1
92YMultiplexer Output From
Source 2
10, 11, 12,132C0 to 2C3Data Inputs From
Source 2
8GNDGround (0V)
16V
2/12
CC
Positive Supply Voltage
PIN DESCRIPTIO N (for H C253)
PIN NoSYMBOLNAME AND FUNCTION
1, 151G, 2GOutput Enable Inputs
14, 2A, BCommon Data Select
Inputs
6, 5, 4, 31C0 to 1C3Data Inputs From
Source 1
7, 91Y, 2Y3 State Multiplexer
Outputs
10, 11, 12,132C0 to 2C3Data Inputs From
Source 2
8GNDGround (0V)
16V
CC
Positive Supply Voltage
Page 3
M54/M 74HC1 53 M54/M7 4 HC 253
TRUTH TABLE
SELECT INPUTSDATA INPUTSSTROBEOUTPUT Y
BAC
0
XXXXXXHLZ
LLLXXXLLL
LLHXXXLHH
LHXLXXLLL
LHXHXXLHH
HLXXLXLLL
HLXXHXLHH
HHXXXLLLL
HHXXXHLHH
X:DON’T CARE - Z: HIGH IMPEDANCE
LOGIC DIAGRAM
HC153HC253
C
1
C
2
C
3
GHC153HC253
3/12
Page 4
M54/M74HC153 M54/M74HC253
ABSOLU TE M AXIMU M R AT INGS
SymbolParameterValueUnit
V
CC
V
V
O
I
IK
I
OK
I
O
I
or I
CC
P
D
T
stg
T
L
AbsoluteMaximumRatings arethose values beyond whichdamagetothedevice mayoccur. Functional operation under these conditionisnotimplied.
(*)500 mW: ≅ 65oC derateto300 mWby 10mW/oC: 65oCto85oC
RECO MM ENDED OPERATI N G CO NDI TI O NS
SymbolParameterValueUnit
V
CC
V
I
V
O
T
op
t
r,tf
Supply Voltage-0.5 to +7V
DC Input Voltage-0.5 to VCC+ 0.5V
I
DC Output Voltage-0.5 to VCC+ 0.5V
DC Input Diode Current± 20mA
DC Output Diode Current± 20mA
DC Output Source Sink Current Per Output Pin± 25mA
DC VCCor Ground Current± 50mA
GND
Power Dissipation500 (*)mW
Storage Temperature-65 to +150
Lead Temperature (10 sec)300
Supply Voltage2 to 6V
Input Voltage0 to V
Output Voltage0 to V
Operating Temperature: M54HC Series
M74HC Series
CC
CC
-55 to +125
-40 to +85
Input Rise and Fall TimeVCC= 2 V0 to 1000ns
V
= 4.5 V0 to 500
CC
= 6 V0 to 400
V
CC
o
C
o
C
V
V
o
C
o
C
4/12
Page 5
DC SPECIFICATIONS
SymbolParameter
V
V
V
V
I
OZ
I
Note: 1. Appliedonlyfor M54/M74HC253
High Level Input
IH
Voltage
Low Level Input
IL
Voltage
High Level
OH
Output Voltage
Low Level Output
OL
Voltage
I
Input Leakage
I
Current
(1)3 State Output
Off State Current
Quiescent Supply
CC
Current
M54/M 74HC1 53 M54/M7 4 HC 253
Test ConditionsValue
T
=25oC
V
(V)
CC
A
54HC and 74HC
Min.Typ.Max.Min.Max.Min.Max.
2.01.51.51.5
4.53.153.153.15
6.04.24.24.2
2.00.50.50.5
4.51.351.351.35
6.01.81.81.8
2.0
4.54.44.54.44.4
6.05.96.05.95.9
4.5I
6.0I
2.0
4.50.00.10.10.1
6.00.00.10.10.1
4.5I
6.0I
6.0
6.0
=
V
I
IO=-20 µA
V
IH
or
V
IL
=-4.0 mA 4.184.314.134.10
O
=-5.2 mA 5.685.85.635.60
O
V
=
I
IO=20µA
V
IH
or
V
IL
= 4.0 mA0.170.260.330.40
O
= 5.2 mA0.180.260.330.40
O
VI=VCCor GND±0.1±1±1µA
V
I=VIH
or V
VO=VCCor GND
1.92.01.91.9
0.00.10.10.1
IL
6.0 VI=VCCor GND44080mA
-40 to 85oC
74HC
-55 to 125oC
54HC
Unit
±0.5±5±10µA
V
V
V
V
5/12
Page 6
M54/M74HC153 M54/M74HC253
AC ELECTRICAL CHARACTERISTICS (CL=50pF,Inputtr=tf=6ns)
Test ConditionsValue
T
=25oC
SymbolParameter
t
t
TLH
THL
Output Transition
Time
V
CC
(V)
2.0307595110
4.58151922
A
54HC and 74HC
Min.Typ.Max.Min.Max.Min.Max.
6.07131619
t
PLH
t
PHL
Propagation
Delay Time
(Cn - Y)
t
t
PLH
PHL
Propagation
Delay Time
(A, B - Y)
t
t
PLH
PHL
Propagation
Delay Time
(G - Y)
t
PZL
t
PZH
Propagation
Delay Time (for
HC253) (G - Y)
t
PLZ
t
PHZ
Propagation
Delay Time (for
HC253) (G - Y)
C
C
PD
Input Capacitance5101010pF
IN
(*)Power Dissipation
2.048115145175
4.515232935
6.012202530
2.068150190225
4.520303845
6.016263238
2.03085105130
4.510172126
6.09141822
2.0
RL=1KΩ
4.512202530
36100125150
6.09172126
2.0
R
=1KΩ
L
4.511202530
22100125150
6.09172126
58
Capacitance
(*) CPDisdefined as the value ofthe IC’sinternal equivalent capacitance which iscalculated from theoperating current consumption without load.
(Referto Test Circuit). Average opertingcurrent canbe obtained by thefollowingequation. ICC(opr) = CPD•VCC•fIN+ICC/4(per circuit)
Information furnishedis believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of useof such information norfor any infringementof patents orother rights of third partieswhich mayresults from its use. No
license is granted byimplication or otherwiseunder any patentor patent rightsofSGS-THOMSON Microelectronics.Specificationsmentioned
in thispublication are subjectto changewithout notice. This publication supersedes and replacesall information previously supplied.
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1994SGS-THOMSON Microelectronics- All Rights Reserved
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