The M54/74HC133 is a high speed CMOS 13INPUT NAND GATE fabricated in silicon gate
C2MOStechnology. Ithasthesamehighspeedperformance of LSTTL combined with true CMOS low
powerconsumption.
The internal circuitiscomposed of 7 stagesincluding buffer output, which gives high noise immunity
and stable output.All inputs are equipped with protectioncircuits againststaticdischarge and transient
excess voltage.
Supply Voltage-0.5 to +7V
DC Input Voltage-0.5 to VCC+ 0.5V
I
DC Output Voltage-0.5 to VCC+ 0.5V
DC Input Diode Current± 20mA
DC Output Diode Current± 20mA
DC Output Source Sink Current Per Output Pin± 25mA
DC VCCor Ground Current± 50mA
GND
Power Dissipation500 (*)mW
Storage Temperature-65 to +150
Lead Temperature (10 sec)300
L
Supply Voltage2 to 6V
Input Voltage0 to V
Output Voltage0 to V
Operating Temperature: M54HC Series
M74HC Series
CC
CC
-55 to +125
-40 to +85
Input Rise and Fall TimeVCC= 2 V0 to 1000ns
V
= 4.5 V0 to 500
CC
= 6 V0 to 400
V
CC
o
C
o
C
V
V
o
C
o
C
3/10
Page 4
M54/M74HC133
DC SPECIFICATIO NS
SymbolParameter
V
V
V
V
I
High Level Input
IH
Voltage
Low Level Input
IL
Voltage
High Level
OH
Output Voltage
Low Level Output
OL
Voltage
I
Input Leakage
I
Current
Quiescent Supply
CC
Current
Test ConditionsValue
V
(V)
CC
=25oC
A
54HC and 74HC
Min.Typ.Max.Min.Max.Min.Max.
-40 to 85oC
74HC
-55 to 125oC
54HC
Unit
T
2.01.51.51.5
4.53.153.153.15
6.04.24.24.2
2.00.50.50.5
4.51.351.351.35
6.01.81.81.8
2.0
4.54.44.54.44.4
6.05.96.05.95.9
4.5I
6.0I
2.0
4.50.00.10.10.1
6.00.00.10.10.1
4.5I
6.0I
6.0
=
V
I
IO=-20 µA
V
IH
or
V
IL
=-4.0 mA 4.184.314.134.10
O
=-5.2 mA 5.685.85.635.60
O
V
=
I
IO=20µA
V
IH
or
V
IL
= 4.0 mA0.170.260.330.40
O
= 5.2 mA0.180.260.330.40
O
VI=VCCor GND±0.1±1±1µA
1.92.01.91.9
0.00.10.10.1
6.0 VI=VCCor GND11020µA
V
V
V
V
4/10
Page 5
M54/M74HC133
AC ELECTRICAL CHARACTERISTICS (CL=50pF,Inputtr=tf=6ns)
Test ConditionsValue
T
=25oC
SymbolParameter
t
t
TLH
THL
Output Transition
Time
V
CC
(V)
2.0307595110
4.58151922
A
54HC and 74HC
Min.Typ.Max.Min.Max.Min.Max.
6.07131619
t
PLH
t
PHL
Propagation
Delay Time
2.042130165195
4.516263339
6.014222833
C
C
PD
Input Capacitance5101010pF
IN
(*)Power Dissipation
29
Capacitance
(*) CPDisdefined as the value ofthe IC’sinternal equivalent capacitance whichis calculated fromthe operatingcurrent consumption without load.
(Referto Test Circuit). Average operting current canbe obtained bythe followingequation. ICC(opr) = CPD•VCC•fIN+I
SWITCHING CHARACTERISTICS TEST CIRCUIT
-40 to 85oC
74HC
-55 to 125oC
54HC
CC
Unit
ns
ns
pF
TEST CIRCUIT ICC(Opr.)
INPUT WAVEFORMIS THE SAMEAS THAT INCASE OF SWITCHINGCHARACTERISTICS TEST.
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consequences of useof suchinformation nor forany infringement of patents or other rights of third parties which may results from its use. No
license is granted byimplication or otherwiseunder any patentor patentrights ofSGS-THOMSON Microelectronics.Specificationsmentioned
in this publication are subjectto changewithout notice. This publication supersedes andreplaces all information previously supplied.
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written approval of SGS-THOMSON Microelectonics.
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