Datasheet M74HC125 Datasheet (ST)

Page 1
M74HC125
QUAD BUS BUFFER (3-STATE)
■ HIGH SPEED:
t
= 8ns (TYP.) at VCC = 6V
PD
■ LOW POWER DISSIPATION:
I
= 4µA(MAX.) at TA=25°C
CC
■ HIGH NOISE IMMUNITY:
V
= V
NIH
■ SYMMETRICAL OUTPUT IMPEDANCE:
|I
| = IOL = 6mA (MIN)
OH
■ BALANCED PROPAGATION DELAYS:
t
≅ t
PLH
■ WIDE OPERATING VOLTAGE RANGE:
V
(OPR) = 2V to 6V
CC
■ PIN AND FUNCTION COMPATIBLE WITH
= 28 % VCC (MIN.)
NIL
PHL
74 SERIES 125
DESCRIPTION
The M74HC125 is an high speed CMOS QUAD BUFFER (3-STATE) fabricated with silicon gate
2
MOS technology.
C The device requires the 3-STATE control input G to be set high to pla ce the output into the high impedance state.
TSSOPDIP SOP
ORDER CODES
PACKAGE TUBE T & R
DIP M74HC125B1R
SOP M74HC125M1R M74HC125RM13TR
TSSOP M74HC125TTR
All inputs are equipped with protection circuits against static discharge and transient excess voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
1/10August 2001
Page 2
M74HC125
INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
1, 4, 10, 13 1G
2, 5, 9, 12 1A TO 4A Data Inputs 3, 6, 8, 11 1Y TO 4Y Data Outputs
7 GND Ground (0V)
14
TRUTH TABLE
TO 4G Output Enable Input
V
CC
Positive Supply Voltage
AG
Y
XHZ
LLL
HLH
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
OK
I
I
or I
CC
P
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied (*) 500mW at 65
Supply Voltage
CC
DC Input Voltage -0.5 to VCC + 0.5
I
DC Output Voltage -0.5 to VCC + 0.5
O
DC Input Diode Current
IK
DC Output Diode Current DC Output Current
O
DC VCC or Ground Current
GND
Power Dissipation
D
Storage Temperature
stg
Lead Temperature (10 sec)
L
°C; derate to 300mW by 10mW/°C from 65°C to 85°C
-0.5 to +7 V V V
± 20 mA ± 20 mA ± 35 mA ± 70 mA
500(*) mW
-65 to +150 °C
300 °C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V
V
V
T
t
r
Supply Voltage
CC
Input Voltage 0 to V
I
Output Voltage 0 to V
O
Operating Temperature
op
Input Rise and Fall Time VCC = 2.0V
, t
f
V V
CC CC
= 4.5V = 6.0V
2 to 6 V
CC CC
-55 to 125 °C 0 to 1000 ns
0 to 500 ns 0 to 400 ns
2/10
V V
Page 3
DC SPECIFICATIONS
Symbol Parameter
V
V
V
V
I
I
High Level Input
IH
Voltage
Low Level Input
IL
Voltage
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
I
Input Leakage
I
Current High Impedance
OZ
Output Leakage Current
Quiescent Supply
CC
Current
M74HC125
Test Condition Value
T
= 25°C
V
CC
(V)
A
Min. Typ. Max. Min. Max. Min. Max.
2.0 1.5 1.5 1.5
6.0 4.2 4.2 4.2
2.0 0.5 0.5 0.5
6.0 1.8 1.8 1.8
2.0
4.5
6.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
6.0
6.0
6.0
IO=-20 µA I
=-20 µA
O
I
=-20 µA
O
I
=-6.0 mA
O
I
=-7.8 mA
O
IO=20 µA I
=20 µA
O
I
=20 µA
O
I
=6.0 mA
O
I
=7.8 mA
O
= VCC or GND
V
I
= VIH or V
V
I
IL
VO = VCC or GND
= VCC or GND
V
I
1.9 2.0 1.9 1.9
4.4 4.5 4.4 4.4
5.9 6.0 5.9 5.9
4.18 4.31 4.13 4.10
5.68 5.8 5.63 5.60
0.0 0.1 0.1 0.1
0.0 0.1 0.1 0.1
0.0 0.1 0.1 0.1
0.17 0.26 0.33 0.40
0.18 0.26 0.33 0.40
-40 to 85°C -55 to 125°C
± 0.1 ± 1 ± 1 µA
± 0.5 ± 5 ± 10 µA
44080µA
Unit
V4.5 3.15 3.15 3.15
V4.5 1.35 1.35 1.35
V
V
3/10
Page 4
M74HC125
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 6ns)
Test Condition Value
Symbol Parameter
t
TLH tTHL
t
PLH tPHL
t
PZL tPZH
Output Transition Time
Propagation Delay Time
High Impedance Output Enable Time
t
PLZ tPHZ
High Impedance Output Disable Time
C
V
CC
(V)
L
(pF)
2.0 50
6.0 5101315
2.0 50
6.0 8131619
2.0
150
6.0 11 18 22 27
2.0
R
50
= 1 KΩ
L
6.0 8131619
2.0
150
L
= 1 KΩ
R
6.0 11 18 22 27
2.0
R
50
= 1 KΩ
L
6.0 10 14 17 20
T
A
Min. Typ. Max. Min. Max. Min. Max.
= 25°C
-40 to 85°C -55 to 125°C
20 60 75 90
36 75 95 110
52 105 130 160
36 75 95 110
52 105 130 160
48 80 100 120
Unit
ns4.5 6121518
ns4.5 9151922
ns4.5 13 21 26 32
ns4.5 9151922
ns4.5 13 21 26 32
ns4.5 12 16 20 24
CAPACITIVE CHARACTERISTICS
Test Condition Value
T
Symbol Parameter
V
CC
(V)
C
C
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
Input Capacitance
IN
Power Dissipation
PD
Capacitance (note 1)5.0 35 pF
5.0 5101010pF
= 25°C
A
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
= CPD x VCC x fIN + ICC/4 (per buffer)
CC(opr)
Unit
4/10
Page 5
TEST CIRCUIT
TEST SWITCH
t
, t
PLH
PHL
, t
t
PZL
PLZ
t
, t
PZH
PHZ
CL = 50pF/150p F or equivalen t (includes j i g and probe capacitance ) R
= 1KΩ or equivalent
1
R
= Z
of pulse generator (typically 50Ω))
T
OUT
M74HC125
Open
V
CC
GND
WAVEFORM 1 : PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle)
5/10
Page 6
M74HC125
WAVEFORM 2 : OUTPUT ENABLE AND DISABLE TIMES (f=1MHz; 50% duty cycle)
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Page 7
M74HC125
Plastic DIP-14 MECHANICAL DATA
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
a1 0.51 0.020
B 1.39 1.65 0.055 0.065 b 0.5 0.020
b1 0.25 0.010
D 20 0.787 E 8.5 0.335
e 2.54 0.100
e3 15.24 0.600
F 7.1 0.280
I 5.1 0.201
L 3.3 0.130
Z 1.27 2.54 0.050 0.100
P001A
7/10
Page 8
M74HC125
SO-14 MECHANICAL DATA
DIM.
A 1.75 0.068 a1 0.1 0.2 0.003 0.007 a2 1.65 0.064
b 0.35 0.46 0.013 0.018
b1 0.19 0.25 0.007 0.010
C 0.5 0.019 c1 45° (typ.)
D 8.55 8.75 0.336 0.344
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 7.62 0.300
F 3.8 4.0 0.149 0.157
G 4.6 5.3 0.181 0.208
L 0.5 1.27 0.019 0.050
M 0.68 0.026
S8° (max.)
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
8/10
PO13G
Page 9
M74HC125
TSSOP14 MECHANICAL DATA
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 1.2 0.047
A1 0.05 0.15 0.002 0.004 0.006
A2 0.8 1 1.05 0.031 0.039 0.041
b 0.19 0.30 0.007 0.012
c 0.09 0.20 0.004 0.0089
D 4.9 5 5.1 0.193 0.197 0.201
E 6.2 6.4 6.6 0.244 0.252 0.260
E1 4.3 4.4 4.48 0.169 0.173 0.176
e 0.65 BSC 0.0256 BSC
K0° 8°0° 8°
L 0.45 0.60 0.75 0.018 0.024 0.030
A2
A
A1
b
e
c
K
L
E
D
E1
PIN 1 IDENTIFICATION
1
0080337D
9/10
Page 10
M74HC125M74HC125
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