The M74HC07 is an high speed CMOS HEX
OPEN DRAIN BUFFER fabricated with silicon
gate C
2
MOS technology.
The internal circuit is composed of 2 stages
including buffer output, which enables high noise
immunity and stable output.
M74HC07
HEX BUFFER (OPEN DRAIN)
TSSOPDIPSOP
ORDER CODES
PACKAGETUBET & R
DIPM74HC07B1R
SOPM74HC07M1RM74HC07RM13TR
TSSOPM74HC07TTR
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
1/10May 2003
Page 2
M74HC07
INPUT AND OUTPUT EQUIVALENT CIRCUITPIN DESCRIPTION
PIN NoSYMBOLNAME AND FUNCTION
1, 3, 5, 9, 11,
13
2, 4, 6, 8, 10,
12
7GNDGround (0V)
14
TRUTH TABLE
Z : High Impedance
ABSOLUTE MAXIMUM RATINGS
SymbolParameterValueUnit
V
V
V
I
I
OK
I
or I
I
CC
P
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
(*) 500mW at 65
Supply Voltage
CC
DC Input Voltage-0.5 to VCC+ 0.5
I
DC Output Voltage-0.5 to VCC+ 0.5
O
DC Input Diode Current
IK
DC Output Diode Current
DC Output Current
O
DC VCCor Ground Current
GND
Power Dissipation
D
Storage Temperature
stg
Lead Temperature (10 sec)
L
°C; derate to 300mW by 10mW/°Cfrom65°Cto85°C
1A to 6AData Inputs
1Y to 6YData Outputs
V
CC
Positive Supply Voltage
AY
LL
HZ
-0.5 to +7V
V
V
± 20mA
± 20mA
± 25mA
± 50mA
500(*)mW
-65 to +150°C
300°C
RECOMMENDED OPERATING CONDITIONS
SymbolParameterValueUnit
Supply Voltage
CC
Input Voltage0 to V
I
Output Voltage0 to V
O
Operating Temperature
op
Input Rise and Fall TimeVCC= 2.0V
V
= 4.5V
CC
= 6.0V
V
CC
2to6V
CC
CC
-55 to 125°C
0 to 1000ns
0 to 500ns
0 to 400ns
2/10
V
V
T
t
V
r,tf
V
V
Page 3
DC SPECIFICATIONS
SymbolParameter
V
V
High Level Input
IH
Voltage
V
Low Level Input
IL
Voltage
Low Level Output
OL
Voltage
Input Leakage
I
I
Current
I
Output Leakage
OZ
Current
I
Quiescent Supply
CC
Current
M74HC07
Test ConditionValue
= 25°C
T
V
CC
(V)
A
Min.Typ. Max.Min.Max. Min. Max.
2.01.51.51.5
6.04.24.24.2
2.00.50.50.5
6.01.81.81.8
2.0
4.5
6.0
4.5
6.0
6.0
6.0
6.0
IO=20 µA
=20 µA
I
O
=20 µA
I
O
=4.0 mA
I
O
=5.2 mA
I
O
V
I=VCC
VI=VIHor V
or GND
IL
VO=VCCor GND
V
I=VCC
or GND
0.00.10.10.1
0.00.10.10.1
0.00.10.10.1
0.170.260.330.40
0.180.260.330.40
-40 to 85°C -55 to 125°C
± 0.1± 1± 1µA
±0.5± 5± 10µA
11020µA
Unit
V4.53.153.153.15
V4.51.351.351.35
V
AC ELECTRICAL CHARACTERISTICS (C
Test ConditionValue
SymbolParameter
t
t
t
Output Transition
THL
Time
Propagation Delay
PLZ
Time
Propagation Delay
PZL
Time
V
CC
(V)
2.0307595110
6.07131619
2.0
R
L
6.06152023
2.0
R
L
6.05152023
= 50 pF, Input tr=tf=6ns)
L
= 25°C
T
A
Min.Typ. Max.Min.Max. Min. Max.
1090115135
=1KΩ
1790115135
=1KΩ
-40 to 85°C -55 to 125°C
Unit
ns4.58151922
ns4.57182327
ns4.57182327
3/10
Page 4
M74HC07
CAPACITIVE CHARACTERISTICS
Test ConditionValue
= 25°C
SymbolParameter
V
CC
(V)
C
C
C
1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
Input Capacitance
IN
Output
OUT
Capacitance
Power Dissipation
PD
Capacitance (note1)5.04pF
5.05101010pF
5.03pF
T
A
Min.Typ. Max.Min.Max. Min. Max.
TEST CIRCUIT
-40 to 85°C -55 to 125°C
CC(opr)=CPDxVCCxfIN+ICC
Unit
/6 (per gate)
CL= 50pF or equivalent (includes jig and probe capacitance)
R
T=ZOUT
of pulse generator (typically 50Ω)
WAVEFORM : PROPAGATION DELAY T IME (f=1MHz; 50% duty cycle)
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