The M74HC02 is an high speed CMOS QUAD
2-INPUT NOR GATE fabricated with si licon gate
2
MOS technology.
C
The internal circuit is composed of 3 stages
including buffer output , which enables high noise
immunity and stable output.
TSSOPDIPSOP
ORDER CODES
PACKAGETUBET & R
DIPM74HC02B1R
SOPM74HC02M1RM74HC02RM13TR
TSSOPM74HC02TTR
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
1/8July 2001
Page 2
M74HC02
INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN NoSYMBOLNAME AND FUNCTION
2, 5, 8, 111A to 4AData Inputs
3, 6, 9, 121B to 4BData Inputs
1, 4, 10, 131Y to 4YData Outputs
7GNDGround (0V)
14
V
CC
TRUTH TABLE
ABY
LLH
LHL
HLL
HHL
ABSOLUTE MAXIMUM RATINGS
SymbolParameterValueUnit
V
V
V
I
I
OK
I
I
or I
CC
P
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
(*) 500mW at 65
Supply Voltage
CC
DC Input Voltage-0.5 to VCC + 0.5
I
DC Output Voltage-0.5 to VCC + 0.5
O
DC Input Diode Current
IK
DC Output Diode Current
DC Output Current
O
DC VCC or Ground Current
GND
Power Dissipation
D
Storage Temperature
stg
Lead Temperature (10 sec)
L
°C; derate to 300mW by 10mW/°C from 65°C to 85°C
Positive Supply Voltage
-0.5 to +7V
V
V
± 20mA
± 20mA
± 25mA
± 50mA
500(*)mW
-65 to +150°C
300°C
RECOMMENDED OPERATING CONDITIONS
SymbolParameterValueUnit
2/8
V
V
V
T
t
r
Supply Voltage
CC
Input Voltage0 to V
I
Output Voltage0 to V
O
Operating Temperature
op
Input Rise and Fall TimeVCC = 2.0V
, t
f
V
V
CC
CC
= 4.5V
= 6.0V
2 to 6V
CC
CC
-55 to 125°C
0 to 1000ns
0 to 500ns
0 to 400ns
V
V
Page 3
DC SPECIFICATIONS
SymbolParameter
V
V
V
V
I
High Level Input
IH
Voltage
Low Level Input
IL
Voltage
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
I
Input Leakage
I
Current
Quiescent Supply
CC
Current
M74HC02
Test ConditionValue
T
= 25°C
V
CC
(V)
A
Min.Typ. Max.Min.Max. Min. Max.
2.01.51.51.5
6.04.24.24.2
2.00.50.50.5
6.01.81.81.8
2.0
4.5
6.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
6.0
6.0
IO=-20 µA
I
=-20 µA
O
I
=-20 µA
O
I
=-4.0 mA
O
I
=-5.2 mA
O
IO=20 µA
I
=20 µA
O
I
=20 µA
O
I
=4.0 mA
O
I
=5.2 mA
O
= VCC or GND
V
I
= VCC or GND
V
I
1.92.01.91.9
4.44.54.44.4
5.96.05.95.9
4.184.314.134.10
5.685.85.635.60
0.00.10.10.1
0.00.10.10.1
0.00.10.10.1
0.170.260.330.40
0.180.260.330.40
-40 to 85°C -55 to 125°C
± 0.1± 1± 1µA
11020µA
Unit
V4.53.153.153.15
V4.51.351.351.35
V
V
AC ELECTRICAL CHARACTERISTICS (C
= 50 pF, Input tr = tf = 6ns)
L
Test ConditionValue
T
SymbolParameter
t
TLH tTHL
Output Transition
Time
V
CC
(V)
2.0307595110
= 25°C
A
-40 to 85°C -55 to 125°C
Min.Typ. Max.Min.Max. Min. Max.
Unit
ns4.58151922
6.07131619
t
PLH tPHL
Propagation Delay
Time
2.0277595110
ns4.59151922
6.08131619
CAPACITIVE CHARACTERISTICS
Test ConditionValue
T
SymbolParameter
V
CC
(V)
C
C
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
Input Capacitance
IN
Power Dissipation
PD
Capacitance (note 1)5.021pF
5.05101010pF
= 25°C
A
Min.Typ. Max.Min.Max. Min. Max.
-40 to 85°C -55 to 125°C
= CPD x VCC x fIN + ICC/4 (per gate)
CC(opr)
Unit
3/8
Page 4
M74HC02
TEST CIRCUIT
CL = 50pF or equivalent (includes jig and p robe capacit ance)
R
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